IXFK26N100P [IXYS]
Polar Power MOSFET HiPerFET; Polar功率MOSFET HiperFET
| 型号： | IXFK26N100P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Polar Power MOSFET HiPerFET |
| 文件： | 总4页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarTM Power MOSFET
HiPerFETTM
VDSS = 1000V
ID25 = 26A
IXFK26N100P
IXFX26N100P
RDS(on) ≤ 390mΩ
N-Channel Enhancement Mode
Avalanche Rated
trr
≤ 300ns
Fast Intrinsic Diode
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
1000
1000
V
V
G
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
D
S
(TAB)
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
26
65
A
A
PLUS247 (IXFX)
IAR
EAS
TC = 25°C
TC = 25°C
13
1
A
J
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
15
V/ns
W
780
(TAB)
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G = Gate
S = Source
D = Drain
TAB = Drain
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
300
260
°C
°C
Features
z Fast intrinsic diode
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Md
Mounting torque
Mounting force
(IXFK)
(IXFX)
1.13/10
Nm/lb.in.
N/lb.
FC
20..120 /4.5..27
Weight
TO-264
TO-247
10
6
g
g
Advantages
z
Easy to mount
Space savings
High power density
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
z
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 1mA
1000
V
V
Applications:
3.5
6.5
z Switched-mode and resonant-mode
power supplies
VGS = ± 30V, VDS = 0V
± 200
nA
z DC-DC Converters
z Laser Drivers
IDSS
VDS = VDSS
VGS = 0V
25
2
μA
mA
TJ = 125°C
z AC and DC motor controls
z Robotics and servo controls
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
390
mΩ
DS99853A(4/08)
© 2008 IXYS CORPORATION,All rights reserved
IXFK26N100P
IXFX26N100P
Symbol
Test Conditions
Characteristic Values
TO-264 (IXFK) Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate input resistance
13
22
S
Ciss
Coss
Crss
11.9
690
60
nF
pF
pF
RGi
1.50
Ω
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
45
45
72
50
ns
ns
ns
ns
Millimeter
Inches
Dim.
Min.
Max.
Min.
Max.
A
A1
A2
b
b1
b2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
Qg(on)
Qgs
197
76
nC
nC
nC
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
c
0.53
0.83
.021
1.020
.780
.033
1.030
.786
Qgd
85
D
E
e
25.91 26.16
19.81 19.96
5.46 BSC
RthJC
RthCS
0.16
°C/W
°C/W
.215 BSC
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
0.15
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
R
R1
6.07
8.38
3.81
1.78
6.27
8.69
4.32
2.29
.239
.330
.150
.070
.247
.342
.170
.090
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
VGS = 0V
26
A
A
V
PLUS 247TM (IXFX) Outline
ISM
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
104
1.5
VSD
trr
QRM
IRM
300
ns
μC
A
IF = 13A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
1.2
12
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFK26N100P
IXFX26N100P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
28
24
20
16
12
8
70
60
50
40
30
20
10
0
VGS = 10V
9V
VGS = 10V
9V
8V
7V
8V
7V
4
0
0
0
0
1
2
3
4
5
6
7
8
9
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
Fig. 4. RDS(on) Normalized to ID = 13A Value
vs. Junction Temperature
28
24
20
16
12
8
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10V
9V
VGS = 10V
I D = 26A
I D = 13A
8V
7V
4
0
2
4
6
8
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 13A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
28
24
20
16
12
8
VGS = 10V
TJ = 125ºC
TJ = 25ºC
4
0
-50
-25
0
25
50
75
100
125
150
5
10 15 20 25 30 35 40 45 50 55 60 65
ID - Amperes
TC - Degrees Centigrade
© 2008 IXYS CORPORATION,All rights reserved
IXFK26N100P
IXFX26N100P
Fig. 8. Transconductance
Fig. 7. Input Admittance
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
TJ = 125ºC
25ºC
- 40ºC
TJ = - 40ºC
25ºC
125ºC
0
0
0
5
10
15
20
25
30
35
40
280
10
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
1.1
35
9.0
1.2
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
16
14
12
10
8
80
70
60
50
40
30
20
10
0
VDS = 500V
D = 13A
I G = 10mA
I
TJ = 125ºC
6
TJ = 25ºC
4
2
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
40
80
120
160
200
240
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
10,000
1,000
100
1.000
0.100
0.010
0.001
= 1 MHz
f
C
iss
C
oss
C
rss
10
0
5
10
15
20
25
30
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_32N100P(86)3-28-08-B
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