IXFK72N20 [IXYS]
HiPerFET Power MOSFETs; HiPerFET功率MOSFET
| 型号： | IXFK72N20 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs |
| 文件： | 总4页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
VDSS
ID25
RDS(on)
IXFK72N20 200V 72 A 35 mW
IXFK80N20 200V 80 A 30 mW
trr £ 200 ns
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Preliminary data
Symbol
TestConditions
MaximumRatings
TO-264 AA
VDSS
VDGR
TJ = 25°C to 150°C
200
200
V
V
TJ = 25°C to 150°C; RGS = 1 MW
G
VGS
Continuous
Transient
±20
±30
V
V
(TAB)
D
S
VGSM
ID25
TC = 25°C
72N20
80N20
72
80
A
A
G = Gate
S = Source
D = Drain
TAB = Drain
IDM
TC = 25°C,
pulse width limited by TJM
72N20
80N20
288
320
A
A
IAR
TC = 25°C
TC = 25°C
74
45
5
A
mJ
EAR
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
PD
TC = 25°C
360
W
Features
TJ
-55 ... +150
150
°C
°C
°C
• Internationalstandardpackages
• Molding epoxies meet UL94V-0
flammabilityclassification
TJM
Tstg
-55 ... +150
• Low RDS (on) HDMOSTM process
TL
1.6 mm (0.063 in) from case for 10 s
Mountingtorque
300 -
0.9/6
°C
• Unclamped Inductive Switching (UIS)
rated
Md
Nm/lb.in.
• Fast intrinsic rectifier
Weight
Symbol
10
g
Applications
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
• DC-DC converters
• Synchronousrectification
• Battery chargers
min. typ. max.
• Switched-modeandresonant-mode
powersupplies
• DC choppers
VDSS
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 4 mA
200
2
V
VGS(th)
4
V
• Temperatureandlightingcontrols
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100
nA
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
200
1
mA
mA
Advantages
RDS(on)
VGS = 10 V,ID = 0.5 • ID25
72N20
80N20
35 mW
30 mW
• Easy to mount
• Space savings
• High power density
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97523C(07/00)
1 - 4
IXFK72N20
IXFK80N20
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
TO-264 AA Outline
min. typ. max.
VDS
= 10 V; ID = 0.5 • ID25, pulse test
35
42
S
Ciss
Coss
Crss
5900
1140
480
pF
pF
pF
VGS
= 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
40
55
ns
ns
ns
ns
VGS
= 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = (External),
120
26
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
A2
b
b1
b2
4.82
2.54
2.00
1.12
2.39
2.90
5.13
2.89
2.10
1.42
2.69
3.09
.190
.100
.079
.044
.094
.114
.202
.114
.083
.056
.106
.122
Qg(on)
Qgs
280
39
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
120
c
0.53
0.83
.021
1.020
.780
.033
1.030
.786
D
E
e
25.91 26.16
19.81 19.96
5.46 BSC
RthJC
RthCK
0.35 K/W
K/W
.215 BSC
0.15
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Q
Q1
R
R1
S
T
6.07
8.38
3.81
1.78
6.04
1.57
6.27
8.69
4.32
2.29
6.30
1.83
.239
.330
.150
.070
.238
.062
.247
.342
.170
.090
.248
.072
Symbol
IS
TestConditions
VGS= 0 V
72N20
80N20
72
80
A
A
ISM
Repetitive; pulse width limited by TJM 72N20
80N20
288
320
A
A
VSD
IF = IS, VGS = 0 V,
1.5
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
QRM
IRM
200
ns
mC
A
IF = IS, -di/dt = 100 A/ms, VR = 100 V
1.2
10
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 4
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXFK72N20
IXFK80N20
200
160
120
80
200
VGS = 10V
TJ = 25OC
VGS = 10V
TJ = 125OC
9V
9V
8V
8V
160
120
80
40
0
7V
7V
6V
6V
5V
40
5V
0
0
4
8
12
16
20
0
4
8
12
16
20
VDS - Volts
VDS - Volts
Figure 1. Output Characteristics at 25OC
Figure 2. Output Characteristics at 125OC
2.4
3.2
V
GS = 10V
VGS = 10V
Tj = 1250
2.8
2.4
2.0
1.6
1.2
0.8
2.0
1.6
1.2
0.8
C
ID = 80A
ID = 40A
Tj =250
150
C
25
50
75
100
125
150
0
50
100
200
250
TJ - Degrees C
ID - Amperes
Figure 3. RDS(on) normalized to 0.5 ID25 value
Figure 4. RDS(on) normalized to 0.5 ID25 value
160
100
80
60
40
20
0
IXFK80N20
TJ = 125oC
120
80
40
0
TJ = 25oC
IXFK72N20
2
4
6
8
10
-50 -25
0
25 50 75 100 125 150
VGS - Volts
TC - Degrees C
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
© 2000 IXYS All rights reserved
3 - 4
IXFK72N20
IXFK80N20
10000
1000
100
12
10
8
Ciss
V
DS = 100 V
ID = 40 A
IG = 1 mA
f = 1MHz
Coss
6
4
Crss
2
0
0
5
10 15 20 25 30 35 40
0
50 100 150 200 250 300 350
Gate Charge - nC
VDS - Volts
Figure 8. Capacitance Curves
Figure 7. Gate Charge
300
200
160
120
80
100
TJ = 25OC
1 ms
10
10 ms
TC = 25OC
TJ = 125OC
100 ms
40
DC
0
1
0.4
0.8
1.2
1.6
2.0
200
1
10
100
VSD - Volts
VDS - Volts
Figure 9. Source Current vs. Source
to Drain Voltage
Figure10. Forward Bias Safe Operating Area
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10-3
10-2
10-1
Pulse Width - Seconds
Figure 11. Transient Thermal Resistance
100
101
© 2000 IXYS All rights reserved
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