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IXFP6N120P [IXYS]

Polar HiPerFET Power MOSFET; 极地HiPerFET功率MOSFET
IXFP6N120P
型号： IXFP6N120P
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Polar HiPerFET Power MOSFET
极地HiPerFET功率MOSFET
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Advance Technical Information  
PolarTM HiPerFETTM  
Power MOSFET  
VDSS = 1200V  
ID25 = 6A  
RDS(on) ≤ 2.4Ω  
IXFA6N120P  
IXFP6N120P  
IXFH6N120P  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXFA)  
Fast Intrinsic Diode  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220AB (IXFP)  
TJ = 25°C to 150°C  
1200  
1200  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
G
D
D (Tab)  
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
6
A
A
TO-247 (IXFH)  
18  
IA  
TC = 25°C  
TC = 25°C  
3
A
EAS  
300  
mJ  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
V/ns  
W
G
D
S
250  
D (Tab)  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
S = Source  
D
= Drain  
TJM  
Tstg  
Tab = Drain  
-55 ... +150  
Features  
TL  
1.6mm (0.062) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z International Standard Packages  
z Dynamic dv/dt Rating  
z Avalanche Rated  
z Fast Intrinsic Diode  
z Low QG  
z Low RDS(on)  
z Low Drain-to-Tab Capacitance  
z Low Package Inductance  
TSOLD  
Md  
Mounting Torque (TO-220 &TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
2.5  
Typ.  
Max.  
z
Easy to Mount  
Space Savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250µA  
VDS = VGS, ID = 1mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
5.0  
Applications  
±100 nA  
z DC-DC Converters  
z Battery Chargers  
IDSS  
10 µA  
1 mA  
TJ = 125°C  
z Switch-Mode and Resonant-Mode  
Power Supplies  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
2.4  
Ω
z Uninterrupted Power Supplies  
z AC Motor Drives  
z High Speed Power Switching  
Applications  
DS100202A(11/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFA6N120P IXFP6N120P  
IXFH6N120P  
Symbol  
Test Conditions  
Characteristic Values  
TO-220 (IXFP) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
3.0  
5.0  
S
RGi  
Gate Input Resistance  
1.8  
Ω
Ciss  
Coss  
Crss  
2830  
150  
30  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
24  
11  
60  
14  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3Ω (External)  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
Qg(on)  
Qgs  
92  
15  
50  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
0.50 °C/W  
RthCS  
RthCS  
TO-220  
TO-247  
0.50  
0.21  
°C/W  
°C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
TO-247 (IXFH) AD Outline  
IS  
VGS = 0V  
6
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
24  
1.4  
300  
trr  
ns  
A
IF = 3A, VGS = 0V  
IRM  
QRM  
7.8  
1.1  
-di/dt = 100A/µs  
VR = 100V  
µC  
Note 1: Pulse test, t ≤ 300µs; duty cycle, d ≤ 2%.  
TO-263 (IXFA) Outline  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
1 = Gate  
2 = Collector  
3 = Emitter  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
Bottom Side  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFA6N120P IXFP6N120P  
IXFH6N120P  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
6
5
4
3
2
1
0
12  
10  
8
VGS = 10V  
7V  
VGS = 10V  
7V  
6V  
6
6V  
5V  
4
2
5V  
4V  
0
0
2
4
6
8
10  
12  
14  
16  
32  
11  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 3A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
6
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
VGS = 10V  
5
4
3
2
1
0
6V  
I D = 6A  
I D = 3A  
5V  
4V  
0
4
8
12  
16  
20  
24  
28  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 3A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
7
6
5
4
3
2
1
0
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
1
2
3
4
5
6
7
8
9
10  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFA6N120P IXFP6N120P  
IXFH6N120P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
10  
9
8
7
6
5
4
3
2
1
0
11  
10  
9
TJ = - 40ºC  
8
25ºC  
7
125ºC  
6
TJ = 125ºC  
25ºC  
- 40ºC  
5
4
3
2
1
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
1.2  
40  
0
1
2
3
4
5
6
7
8
9
10  
100  
10  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
18  
16  
14  
12  
10  
8
VDS = 600V  
I D = 3A  
I G = 10mA  
6
TJ = 125ºC  
4
TJ = 25ºC  
2
0
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Capacitance  
10,000  
1.000  
0.100  
0.010  
0.001  
= 1 MHz  
f
C
iss  
1,000  
100  
10  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_6N120P(6C)10-02-09  

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