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IXFQ60N50P3 [IXYS]

Polar3 HiperFET Power MOSFET; Polar3 HiPerFET功率MOSFET
IXFQ60N50P3
型号： IXFQ60N50P3
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Polar3 HiperFET Power MOSFET
Polar3 HiPerFET功率MOSFET
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Advance Technical Information  
Polar3TM HiperFETTM  
Power MOSFET  
VDSS = 500V  
ID25 = 60A  
RDS(on) ≤ 100mΩ  
IXFT60N50P3  
IXFQ60N50P3  
IXFH60N50P3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-268 (IXFT)  
Fast Intrinsic Rectifier  
G
S
D (Tab)  
TO-3P (IXFQ)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
500  
V
V
G
VDGR  
D
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
S
D (Tab)  
ID25  
IDM  
TC = 25°C  
60  
A
A
TO-247 (IXFH)  
TC = 25°C, Pulse Width Limited by TJM  
150  
IA  
TC = 25°C  
TC = 25°C  
30  
1
A
J
EAS  
G
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
35  
V/ns  
W
D
D (Tab)  
S
1040  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
S = Source  
D
= Drain  
TJM  
Tstg  
Tab = Drain  
-55 ... +150  
Features  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z Fast Intrinsic Rectifier  
z Avalanche Rated  
Md  
Mounting Torque (TO-247 & TO-3P)  
1.13 / 10  
Nm/lb.in.  
z Low RDS(ON) and QG  
Weight  
TO-268  
TO-3P  
TO-247  
4.0  
5.5  
6.0  
g
g
g
z Low Package Inductance  
Advantages  
z High Power Density  
z Easy to Mount  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ.  
Max.  
z Space Savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
Applications  
5.0  
z Switch-Mode and Resonant-Mode  
Power Supplies  
±100 nA  
IDSS  
25 μA  
2 mA  
z DC-DC Converters  
z Laser Drivers  
TJ = 125°C  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
100 mΩ  
DS100311(03/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFT60N50P3 IXFQ60N50P3  
IXFH60N50P3  
Symbol  
Test Conditions  
Characteristic Values  
TO-3P (IXFQ) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
35  
60  
S
Ciss  
Coss  
Crss  
6250  
680  
5
pF  
pF  
pF  
RGi  
Gate Input Resistance  
1.0  
Ω
td(on)  
tr  
td(off)  
tf  
18  
16  
37  
8
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Qg(on)  
Qgs  
96  
28  
26  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.12 °C/W  
°C/W  
(TO-247 & TO-3P)  
0.25  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
60  
A
A
V
TO-247 Outline  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
240  
1.4  
trr  
250  
ns  
A
∅ P  
IF = 30A, -di/dt = 100A/μs  
1
2
3
IRM  
QRM  
11  
1.0  
VR = 100V, VGS = 0V  
μC  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
TO-263 Outline  
e
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
.780 .800  
.177  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFT60N50P3 IXFQ60N50P3  
IXFH60N50P3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
60  
50  
40  
30  
20  
10  
0
120  
100  
80  
60  
40  
20  
0
VGS = 10V  
8V  
VGS = 10V  
8V  
7V  
7V  
6V  
6V  
5V  
5V  
0
5
10  
15  
20  
25  
30  
0
0
0
1
2
3
4
5
6
7
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 30A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
60  
50  
40  
30  
20  
10  
0
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
7V  
VGS = 10V  
I D = 60A  
6V  
I D = 30A  
5V  
4V  
2
4
6
8
10  
12  
14  
16  
18  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 30A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
70  
60  
50  
40  
30  
20  
10  
0
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFT60N50P3 IXFQ60N50P3  
IXFH60N50P3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
120  
100  
80  
60  
40  
20  
0
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
25ºC  
- 40ºC  
125ºC  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
3.5  
0.3  
0
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
1.2  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
180  
160  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 250V  
I D = 30A  
I G = 10mA  
60  
TJ = 125ºC  
40  
TJ = 25ºC  
20  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
1000  
100  
10  
10,000  
1,000  
100  
10  
C
iss  
RDS(on) Limit  
C
100µs  
oss  
1
TJ = 150ºC  
C
rss  
TC = 25ºC  
Single Pulse  
1ms  
= 1 MHz  
5
f
1
0.1  
10  
15  
20  
25  
30  
35  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFT60N50P3 IXFQ60N50P3  
IXFH60N50P3  
Fig. 13. Maximum Transient Thermal Impedance  
AAAAA  
0.2  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_60N50P3(W8)03-10-11  

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