IXFR24N50 [IXYS]
HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Back Surface); HiPerFET功率MOSFET ISOPLUS247 （电隔离背面）
| 型号： | IXFR24N50 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Back Surface) |
| 文件： | 总2页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advanced Technical Information
HiPerFETTM Power MOSFETs
ISOPLUS247TM
VDSS
ID25
RDS(on)
IXFR 26N50
IXFR 24N50
500V
500V
24 A
22 A
0.20 W
0.23 W
(Electrically Isolated Back Surface)
trr £ 250 ns
N-Channel Enhancement Mode
High dV/dt, Low trr, HDMOSTM Family
ISOPLUS
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
500
500
V
V
G
D
VGS
VGSM
Continuous
Transient
±20
±30
V
V
Isolated back surface*
D = Drain
ID25
IDM
IAR
TC = 25°C
26N50
24N50
26N50
24N50
26N50
24N50
26
24
104
96
26
24
A
A
A
A
A
A
G = Gate
S = Source
TC = 25°C, Pulse width limited by TJM
TC = 25°C
*Patentpending
EAR
TC = 25°C
30
5
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
V/ns
Features
PD
TC = 25°C
250
W
• SiliconchiponDirect-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electricalisolation
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
• Low drain to tab capacitance(<50pF)
TL
1.6 mm (0.062 in.) from case for 10 s
300
2500
6
°C
V~
g
• Low R
HDMOSTM process
• RuggeDdSp(oon)lysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
VISOL
Weight
50/60 Hz, RMS
t = 1 minute leads-to-tab
• Fast intrinsic Rectifier
Applications
Symbol
VDSS
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
• AC motor control
min. typ. max.
VGS = 0 V, ID = 250uA
500
2
V
VGS(th)
IGSS
VDS = VGS, ID = 4mA
4
V
VGS = ±20 VDC, VDS = 0
±100
nA
Advantages
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
200
1
mA
mA
• Easy assembly
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = IT
Notes 1 & 2
26N50
24N50
0.20
0.23
W
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98526A(2/99)
1 - 2
IXFR 24N50
IXFR 26N50
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS 247 (IXFR) OUTLINE
VDS = 15 V; ID = IT
Note 1
11
21
S
Ciss
Coss
Crss
4200
450
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
135
td(on)
tr
td(off)
tf
16
33
65
30
25
45
80
40
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
RG = 1 W (External),
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Qg(on)
Qgs
135 160
nC
nC
nC
Dim.
Millimeter
Min. Max. Min. Max.
Inches
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
28
62
40
85
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Qgd
RthJC
RthCK
0.50 K/W
K/W
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
0.15
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
L
L1
5.45 BSC
19.81 20.32
.215 BSC
.780 .800
.150 .170
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
3.81
4.32
Symbol
TestConditions
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
IS
VGS = 0 V
26
A
A
S
T
U
13.21 13.72
15.75 16.26
.520 .540
.620 .640
.065 .080
1.65
3.03
ISM
Repetitive; pulse width limited by TJM
104
VSD
trr
IF = IS, VGS = 0 V, Note 1
1.5
V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
250
400
ns
ns
IF = Is, -di/dt = 100 A/ms,
VR = 100 V
QRM
IRM
1
2
1.5
mC
mC
A
A
10
15
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %
2. IT test current: IXFR26N50
IT = 13A
IXFR24N50
IT = 12A
3.See IXFH26N50 data sheet for characteristic curves.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 2
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