IXGA12N120A2 [IXYS]
IGBT Optimized for switching up to 5KHz; IGBT优化切换至为5KHz
| 型号： | IXGA12N120A2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | IGBT Optimized for switching up to 5KHz |
| 文件： | 总5页 (文件大小：579K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXGA 12N120A2
IXGP 12N120A2
VCES
IC25
= 1200 V
24 A
IGBT
=
Optimized for
switching up to 5KHz
VCE(sat) = 3.0 V
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1200
1200
V
V
TO-220AB(IXGP)
VGES
VGEM
Continuous
Transient
20
30
V
V
G
C
E
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
24
12
48
A
A
A
TO-263AA(IXGA)
SSOA
VGE = 15 V, TVJ = 125°C, RG = 100 Ω
ICM = 24
A
(RBSOA)
Clamped inductive load
@ 0.8 VCES
G
C (TAB)
E
PC
TC = 25°C
75
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
•International standard packages
•LJEowDEVCCET(saOt) -220AB and TO-263AA
- for minimum on-state conduction
losses
Md
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
Weight
TO-220
TO-263
4
2
g
g
•MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
BVCES
VGE(th)
IC = 250 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
1200
2.5
V
V
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
5.0
• Cpoawpaecritsourpdpilsiecsharge
Advantages
ICES
VCE = VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
25
250
µA
µA
IGES
VCE = 0 V, VGE = 20 V
IC = IC90, VGE = 15V
100
3.0
nA
V
• Easy to mount with one screw
• Reduces assembly time and cost
• High power density
VCE(sat)
2.4
© 2004 IXYS All rights reserved
DS99199(8/04)
IXGA12N120A2
IXGP12N120A2
TO-220 AB Dimensions
Symbol
TestConditions
Characteristic Values
Min. Typ. Max.
(TJ = 25°C, unless otherwise specified)
gfs
IC = IC90 VCE = 10 V
4.0
7.8
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IC(on)
VGE = 10 V, VCE = 10V
35
A
Cies
Coes
Cres
530
30
4
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Qge
Qgc
24
5.5
8.8
nC
nC
nC
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Pins: 1 - Gate
3 - Emitter
2 - Collector
4 - Collector
Bottom Side
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
VCE = 960 V, RG = Roff = 100 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
td(on)
tri
td(off)
tfi
15
30
ns
ns
ns
ns
mJ
680 1000
650 1000
5.4
,
Eoff
9.0
td(on)
tri
Eon
td(off)
tfi
15
30
0.5
700
1050
7.7
ns
ns
mJ
ns
ns
mJ
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 960 V, RG = Roff = 100 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
,
TO-263AAOutline
Eoff
RthJC
RthCK
1.66 K/W
K/W
TO-220
0.5
1. Gate
2. Collector
3. Emitter
4. Collector
BottomSide
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
Min.RecommendedFootprint
(Dimensions in inches and mm)
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
L1
L2
L3
L4
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
IXGA12N120A2
IXGP12N120A2
Fig. 1. Output Characteristics
@ 25
Fig. 2. Extended Output Characteristics
º
C
@ 25 C
º
24
22
20
18
16
14
12
10
8
70
60
50
40
30
20
10
0
V
GE
= 15V
V
GE
= 15V
13V
11V
13V
11V
9V
9V
7V
5V
6
7V
5V
4
2
0
0.5
0.5
6
1
1.5
2
2.5
3
3.5
4
4.5
5
0
5
10
15
20
25
30
VC E - Volts
VC E - Volts
Fig. 4. Dependence of VCE(sat) on
Temperature
Fig. 3. Output Characteristics
@ 125
ºC
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
24
22
20
18
16
14
12
10
8
V
= 15V
13V
11V
GE
V
= 15V
GE
I
= 24A
C
9V
7V
I
= 12A
= 6A
C
6
I
C
4
5V
4
2
0
-50
-25
0
25
50
75
100 125 150
1
1.5
2
2.5
3
3.5
4.5
5
TJ - Degrees Centigrade
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
Fig. 6. Input Admittance
8
7
6
5
4
3
2
1
24
21
18
15
12
9
= 25ºC
T
J
I
= 24A
12A
6A
C
T = 125ºC
J
6
25ºC
-40ºC
3
0
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
7
8
9
10 11 12 13 14 15 16
VG E - Volts
VG E - Volts
© 2004 IXYS All rights reserved
IXGA12N120A2
IXGP12N120A2
Fig. 8. Dependence of Turn-off
Energy Loss on RG
Fig. 7. Transconductance
11
10
9
18
16
14
12
10
8
I
= 24A
C
8
T = 25ºC
J
7
V
GE
= 15V
6
V
CE
= 960V
T = -40ºC
J
5
I
= 12A
= 6A
C
C
25ºC
125ºC
4
6
3
4
I
2
2
1
0
0
0
200
400
600
800
1000
0
3
6
9
12
15
18
21
24
27
I C - Amperes
R G - Ohms
Fig. 9. Dependence of Turn-Off
Energy Loss on IC
Fig. 10. Dependence of Turn-off
Delay Time on RG
3
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
16
14
12
10
8
V
GE
= 15V
R
=100Ω
G
I
= 6A
12A
24A
V
= 960V
C
V
GE
= 15V
CE
T = 25ºC
J
V
CE
= 960V
T = 25ºC
J
6
4
2
0
0
200
400
600
800
1000
6
9
12
15
18
21
24
R G - Ohms
I C - Amperes
Fig. 12. Dependence of Turn-off
Switching Time on IC
Fig. 11. Dependence of Turn-off
Current Fall Time on RG
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0.35
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
I
= 24A
C
I
= 12A
C
td(off)
tfi - - - - -
V
V
= 15V
GE
CE
R
= 100Ω
G
= 960V
V
V
= 15V
GE
T = 25ºC
J
= 960V
CE
IC = 6A
200
T = 25ºC
J
0
400
600
800
1000
6
8
10
12
14
16
18
20
22
24
R G - Ohms
I C - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGA12N120A2
IXGP12N120A2
Fig. 14. Reverse-Bias Safe
Operating Area
Fig. 13. Gate Charge
16
14
12
10
8
30
25
20
15
10
5
V
= 600V
CE
I
I
= 12A
C
G
= 10mA
6
T = 125ºC
J
4
R
= 100Ω
G
dV/dT < 10V/ns
2
0
0
100
300
500
700
VC E - Volts
900
1100
1300
0
2
4
6
8
10 12 14 16 18 20 22 24
Q G - nanoCoulombs
Fig. 15. Capacitance
1000
100
10
C
ies
C
oes
C
res
f = 1 MHz
10
1
0
5
15
20
25
30
35
40
VC E - Volts
Fig. 17. Maximum Transient Thermal Resistance
10.00
1.00
0.10
0.1
1
10
100
1000
Pulse Width - milliseconds
© 2004 IXYS All rights reserved
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