IXGA30N120B3-TRL [IXYS]
Insulated Gate Bipolar Transistor,;
| 型号： | IXGA30N120B3-TRL |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总6页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GenX3TM 1200V
IGBTs
IXGA30N120B3
IXGP30N120B3
IXGH30N120B3
VCES
IC110
VCE(sat)
tfi(typ)
= 1200V
= 30A
≤£ 3.5V
= 204ns
High-Speed Low-Vsat PT
IGBTs 3-20 kHz Switching
TO-263 (IXGA)
G
E
Symbol
Test Conditions
Maximum Ratings
C (Tab)
VCES
VCGR
TC = 25°C to 150°C
1200
1200
V
V
TJ = 25°C to 150°C, RGE = 1MΩ
TO-220 (IXGP)
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
60
30
150
A
A
A
G
C
E
C (Tab)
SSOA
VGE = 15V, TVJ = 125°C, RG = 5Ω
ICM = 60
A
(RBSOA)
Clamped Inductive Load
VCE ≤ VCES
TO-247 (IXGH)
PC
TC = 25°C
300
W
TJ
- 55 ... +150
150
°C
°C
°C
TJM
Tstg
G
C
E
- 55 ... +150
C (Tab)
TL
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
300
260
°C
°C
G = Gate
E = Emitter
C
Tab
=
=
Collector
Collector
TSOLD
Md
Mounting Torque (TO-220 & TO-247)
1.13/10
Nm/lb.in.
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
Features
z Optimized for Low Conduction and
Switching Losses
z Square RBSOA
z International Standard Packages
Symbol
Test Conditions
Characteristic Values
Advantages
(TJ = 25°C, Unless Otherwise Specified)
Min.
1200
3.0
Typ.
Max.
z High Power Density
z Low Gate Drive Requirement
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
V
V
5.0
Applications
100 μA
TJ = 125°C
1 mA
z Power Inverters
z UPS
IGES
VCE = 0V, VGE = ±20V
±100 nA
z Motor Drives
z SMPS
VCE(sat)
IC = 30A, VGE = 15V, Note 1
2.96
2.95
3.5
V
V
z PFC Circuits
z Welding Machines
TJ = 125°C
DS99730B(10/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXGA30N120B3 IXGP30N120B3
IXGH30N120B3
Symbol
Test Conditions
Characteristic Values
TO-220 (IXGP) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = 30A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
11
19
S
Cies
Coes
Cres
1750
120
46
pF
pF
pF
Qg
87
15
39
nC
nC
nC
Qge
Qgc
IC = 30A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
16
37
ns
ns
Inductive load, TJ = 25°C
IC = 30A, VGE = 15V
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Eon
td(off)
tfi
3.47
127
204
2.16
mJ
200 ns
380 ns
VCE = 0.8 • VCES, RG = 5Ω
Notes 2
Eoff
4.0 mJ
td(on)
tri
18
38
ns
ns
Inductive load, TJ = 125°C
IC = 30A,VGE = 15V
Eon
td(off)
tfi
6.70
216
255
5.10
mJ
ns
V
CE = 0.8 • VCES,RG = 5Ω
Notes 2
ns
Eoff
mJ
RthJC
RthCS
RthCS
0.42 °C/W
°C/W
TO-220
TO-247
0.50
0.21
TO-247 (IXGH) AD Outline
°C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
TO-263 (IXGA) Outline
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
1 = Gate
2 = Collector
3 = Emitter
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100 BSC
.320
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
.575
.090
.040
.050
0
.625
.110
.055
.070
.005
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463 6,771,478 B2 7,071,537
7,005,734 B2 7,157,338B2
7,063,975 B2
IXGA30N120B3 IXGP30N120B3
IXGH30N120B3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
60
50
40
30
20
10
0
200
180
160
140
120
100
80
VGE = 15V
VGE = 15V
13V
11V
13V
11V
9V
7V
9V
7V
60
40
20
0
0.0
0.5
0.5
7
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
4.5
14
5.0
5.0
15
0
3
6
9
12
15
18
21
24
27
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
JunctionTemperature
Fig. 3. Output Characteristics @ TJ = 125ºC
60
50
40
30
20
10
0
1.6
1.4
1.2
1.0
0.8
0.6
VGE = 15V
VGE = 15V
13V
11V
I C = 60A
9V
I C = 30A
7V
5V
I C = 15A
-50
-25
0
25
50
75
100
125
150
0.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
8
60
50
40
30
20
10
0
TJ = 25ºC
7
6
5
4
3
2
I C = 60A
TJ = 125ºC
25ºC
- 40ºC
30A
15A
6
8
9
10
11
12
13
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
VGE - Volts
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXGA30N120B3 IXGP30N120B3
IXGH30N120B3
Fig. 8. Gate Charge
Fig. 7. Transconductance
16
14
12
10
8
TJ = - 40ºC
24
20
16
12
8
VCE = 600V
I
C = 30A
I G = 10mA
25ºC
125ºC
6
4
4
2
0
0
0
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
QG - NanoCoulombs
IC - Amperes
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
70
60
50
40
30
20
10
0
10,000
1,000
100
= 1 MHz
f
C
ies
C
oes
TJ = 125ºC
RG = 5Ω
dv / dt < 10V / ns
C
res
10
0
5
10
15
20
25
30
35
40
200
300
400
500
600
700
800
900
1000 1100 1200
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA30N120B3 IXGP30N120B3
IXGH30N120B3
Fig. 12. Inductive Switching
Fig. 13. Inductive Switching
Energy Loss vs. Gate Resistance
Energy Loss vs. Collector Current
18
16
14
12
10
8
20
18
16
14
12
10
8
16
14
12
10
8
16
E
E
on - - - -
E
E
14
on - - - -
off
RG = 5
off
VGE = 15V
Ω ,
CE = 960V
TJ = 125ºC , VGE = 15V
CE = 960V
12
10
8
V
V
TJ = 125ºC
I C = 60A
6
6
4
4
6
I C = 30A
TJ = 25ºC
2
2
4
6
0
0
2
4
15
20
25
30
35
40
45
50
55
60
5
7
9
11
13
15
17
19
21
23
25
RG - Ohms
IC - Amperes
Fig. 15. Inductive Turn-off
Fig. 14. Inductive Switching
Switching Times vs. Gate Resistance
Energy Loss vs. Junction Temperature
14
16
14
12
10
8
460
420
380
340
300
260
220
650
550
450
350
250
150
50
t f
td(off) - - - -
E
E
on - - - -
off
12
10
8
TJ = 125ºC, VGE = 15V
RG = 5Ω VGE = 15V
,
VCE = 960V
VCE = 960V
I C = 60A
I C = 60A
6
I C = 30A
4
6
I C = 30A
2
4
0
2
5
7
9
11
13
15
17
19
21
23
25
25
35
45
55
65
75
85
95
105
115
125
RG - Ohms
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
450
400
350
300
250
200
150
100
400
425
375
325
275
225
175
125
280
250
220
190
160
130
100
tf
td(off)
- - - -
350
300
250
200
150
100
50
t f
td(off) - - - -
RG = 5Ω , VGE = 15V
RG = 5Ω , VGE = 15V
VCE = 960V
VCE = 960V
I C = 60A, 30A
TJ = 125ºC
TJ = 25ºC
15
20
25
30
35
40
45
50
55
60
25
35
45
55
65
75
85
95
105
115
125
IC - Amperes
TJ - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXGA30N120B3 IXGP30N120B3
IXGH30N120B3
Fig. 18. Inductive Turn-on
Fig. 19. Inductive Turn-on
Switching Times vs. Gate Resistance
Switching Times vs. Collector Current
180
160
140
120
100
80
50
46
42
38
34
30
26
22
18
14
110
100
90
80
70
60
50
40
30
20
10
0
30
28
26
24
22
20
18
16
14
12
10
8
t r
td(on)
- - - -
tr
td(on)
- - - -
RG = 5Ω , VGE = 15V
TJ = 125ºC, VGE = 15V
I C = 60A
VCE = 960V
VCE = 960V
TJ = 125ºC, 25ºC
60
40
I C = 30A
20
0
5
7
9
11
13
15
17
19
21
23
25
15
20
25
30
35
40
45
50
55
60
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
130
110
90
26
24
22
20
18
16
14
tr
t
d(on) - - - -
RG = 5Ω , VGE = 15V
VCE = 960V
I C = 60A
70
50
30
I C = 30A
10
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_30N120B3(4A)10-06-09-A
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