IXGA4N100 [IXYS]

Insulated Gate Bipolar Transistor, 8A I(C), 1000V V(BR)CES, N-Channel, TO-263AB, D2PAK-3;
IXGA4N100
型号: IXGA4N100
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Insulated Gate Bipolar Transistor, 8A I(C), 1000V V(BR)CES, N-Channel, TO-263AB, D2PAK-3

栅 功率控制 晶体管
文件: 总2页 (文件大小:69K)
下载:  下载PDF数据表文档文件

IXGA50N60B4

High-Gain IGBTs

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15 IXYS

IXGA50N60C4

High-Gain IGBTs

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17 IXYS

IXGA7N60B

HiPerFAST IGBT

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12 IXYS

IXGA7N60B

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AA

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19 ETC

IXGA7N60BD1

HiPerFAST IGBT with Diode

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10 IXYS

IXGA7N60C

HiPerFAST IGBT Lightspeed Series

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18 IXYS

IXGA7N60C

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AA

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38 ETC

IXGA7N60CD1

HiPerFAST IGBT with Diode Lightspeed Series

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9 IXYS

IXGA8N100

IXGA8N100

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30 IXYS

IXGA9289

Insulated Gate Bipolar Transistor, 120A I(C), 300V V(BR)CES, N-Channel, TO-263AA, TO-263AA, 3 PIN

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0 LITTELFUSE

IXGB16N60R2

TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 16A I(C) | SIP

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20 ETC

IXGB16N60U3

TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 16A I(C) | SIP

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50 ETC

IXGB200N60B3

GenX3 600V IGBT

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18 IXYS

IXGB200N60B3

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

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18 IXYS

IXGB25N60R2

TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 25A I(C) | SIP

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8 ETC