IXGH30N60B2D1 [IXYS]
HiPerFAST IGBT; HiPerFAST IGBT
| 型号： | IXGH30N60B2D1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT |
| 文件： | 总6页 (文件大小：601K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Data
HiPerFASTTM IGBT
IXGH 30N60B2D1
IXGT 30N60B2D1
VCES
IC25
= 600 V
= 70 A
VCE(sat) < 1.8 V
tfityp = 82 ns
Optimized for 10-25 KHz hard
switching and up to 150 KHz
resonant switching
Symbol
Test Conditions
Maximum Ratings
TO-247AD(IXGH)
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
600
600
V
V
TAB)
VGES
VGEM
Continuous
Transient
20
30
V
V
G
C
E
IC25
IC110
ICM
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1 ms
70
30
150
A
A
A
TO-268(IXGT)
SSOA
(RBSOA)
PC
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ ≤ 600 V
TC = 25°C
ICM = 60
A
G
E
C (TAB)
190
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Features
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
z
Medium frequency IGBT
Square RBSOA
Md
Mounting torque (M3) (TO-247)
1.13/10Nm/lb.in.
z
z
z
High current handling capability
MOS Gate turn-on
Weight
TO-247
TO-268
6
4
g
g
- drive simplicity
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
z
PFC circuits
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
VGE(th)
ICES
IC = 250 µA, VCE = VGE
2.5
5.0
V
power supplies
z
AC motor speed control
VCE = V
T = 25°C
200
3
µA
z
VGE = 0CVES
TJJ = 150°C
mA
nA
V
DC servo and robot drives
z
DC choppers
IGES
VCE = 0 V, VGE = 20 V
IC = 24 A, VGE = 15 V
100
1.8
VCE(sat)
TJ = 25°C
© 2004 IXYS All rights reserved
DS99134A(04/04)
IXGH 30N60B2D1
IXGT 30N60B2D1
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = 24 A; VCE = 10 V,
18
26
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
∅ P
Cies
Coes
Cres
1500
145
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 24 A, VGE = 15 V, VCE = 300 V
Inductive load, TJ = 25°C
Qg
Qge
Qgc
66
9
22
nC
nC
nC
e
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A12
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
A
td(on)
tri
td(off)
tfi
13
15
110
82
ns
ns
200 ns
150 ns
0.6 mJ
b
b12
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
b
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Eoff
0.32
e
5.20
5.72 0.205 0.225
td(on)
tri
Eon
td(off)
tfi
13
17
0.22
200
150
0.9
ns
ns
mJ
ns
ns
mJ
L
19.81 20.32
4.50
.780 .800
.177
L1
Inductive load, TJ = 125°C
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
∅P 3.55
Q
R
S
3.65
.140 .144
5.89
4.32
6.15 BSC
6.40 0.232 0.252
5.49
.170 .216
242 BSC
Eoff
TO-268 Outline
RthJC
RthCK
0.65 K/W
K/W
(TO-247)
0.25
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
I
= 30 A, VGE = 0 V, Pulse test
TJ =150°C
1.6
2.5
V
V
tF≤ 300 µs, duty cycle d ≤ 2 %
IRM
trr
IF = 30 A, VGE = 0 V, -diF/dt =100 A/µs, TJ = 100°C
IFR = 1 A; -di/dt = 100 A/µs; VR = 30 V
4
A
ns
ns
V = 100 V
TJ = 100°C 100
25
RthJC
0.9 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXGH 30N60B2D1
IXGT 30N60B2D1
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
300
250
200
150
100
50
50
45
40
35
30
25
20
15
10
5
VGE = 15V
VGE = 15V
13V
13V
11V
9V
11V
9V
7V
5V
7V
5V
0
0
0.5
1
1.5
2
2.5
3
0
-50
4
2
4
6
8
10
12
14 16
18
VC E - Volts
VC E - Volts
Fig. 4. Dependence of VCE(sat) on
Temperature
Fig. 3. Output Characteristics
@ 125 Deg. C
1.3
1.2
1.1
1.0
0.9
0.8
0.7
50
45
40
35
30
25
20
15
10
5
VGE = 15V
13V
IC = 48A
11V
9V
7V
VGE = 15V
IC = 24A
IC = 12A
5V
0
-25
0
25
50
75
100 125 150
0.5
1
1.5
2
2.5
3
TJ - Degrees Centigrade
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
Fig. 6. Input Admittance
250
225
200
175
150
125
100
75
4.2
3.9
3.6
3.3
3
TJ = 25ºC
TJ = -40ºC
25ºC
125ºC
IC = 48A
24A
12A
2.7
2.4
2.1
1.8
1.5
1.2
50
25
0
5
6
7
8
9
10 11 12 13 14 15 16 17
5
6
7
8
9
10
11
12
13
VG E - Volts
VG E - Volts
© 2004 IXYS All rights reserved
IXGH 30N60B2D1
IXGT 30N60B2D1
Fig. 8. Dependence of Turn-Off
Ene r gy on RG
Fig. 7. Transconductance
45
40
35
30
25
20
15
10
5
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
TJ = -40ºC
25ºC
125ºC
IC = 48A
TJ = 125ºC
VGE = 15V
VCE = 400V
IC = 24A
IC = 12A
0
0
25 50 75 100 125 150 175 200 225 250
0
10
20
30
40
50
60
70
80
I C - Amperes
R G - Ohms
Fig. 10. Dependence of Turn-Off
Energy on Temperature
Fig. 9. Dependence of Turn-Off
Ene r gy on IC
2
1.8
1.6
1.4
1.2
1
2
1.8
1.6
1.4
1.2
1
RG = 5Ω
RG = 5Ω
VGE = 15V
VCE = 400V
V
GE = 15V
VCE = 400V
IC = 48A
IC = 24A
TJ = 125ºC
TJ = 25ºC
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
IC = 12A
10
15
20
25
30
35
40
45
50
25 35 45 55 65 75 85 95 105 115 125
I C - Amperes
TJ - Degrees Centigrade
Fig. 11. Dependence of Turn-Off
Switching Time on RG
Fig. 12. Dependence of Turn-Off
Switching Time on IC
260
240
220
200
180
160
140
120
100
80
700
600
500
400
300
200
100
td(off)
td(off)
fi
TJ = 125ºC
VGE = 15V
VCE = 400V
tfi - - - - - -
t -
- - - - -
RG = 5Ω
VGE = 15V
VCE = 400V
TJ = 125ºC
IC = 12A
IC = 24A
TJ = 25ºC
IC = 48A
60
0
10
20
30
40
50
60
70
80
10
15
20
25
30
35
40
45
50
R G - Ohms
I C - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXGH 30N60B2D1
IXGT 30N60B2D1
Fig. 13. Dependence of Turn-Off
Switching Time on Temperature
Fig. 14. Gate Charge
220
200
180
160
140
120
100
80
15
12
9
VCE = 300V
IC = 24A
G = 10mA
td(off)
IC = 12A
24A
tfi
-
- - - - -
I
RG = 5Ω
VGE = 15V
VCE = 400V
48A
6
IC = 48A
24A
3
12A
0
25 35 45 55 65 75 85 95 105 115 125
0
10
20
30
40
50
60
70
TJ - Degrees Centigrade
Q G - nanoCoulombs
Fig. 15. Capacitance
10000
1000
100
f = 1 MHz
C
ies
C
oes
C
res
10
0
5
10
15
20
25
30
35
40
VC E - Volts
Fig. 16. Maximum Transient Thermal Resistance
1.0
0.5
0.1
1
10
100
1000
Pulse Width - milliseconds
© 2004 IXYS All rights reserved
IXGH 30N60B2D1
IXGT 30N60B2D1
60
A
1000
nC
30
A
T = 100°C
VVRJ= 300V
T = 100°C
VVRJ= 300V
50
40
30
20
10
0
25
800
I = 60A
IRM
I = 60A
IF= 30A
Qr
IF= 30A
IF
IFF= 15A
IFF= 15A
20
15
10
5
600
400
200
0
TVJ=150°C
TVJ=100°C
TVJ=25°C
0
A/µs
0
1
2
3 V
VF
100
1000
0
200 400 600 800 1000
-diF/dt
A/µs
-diF/dt
Fig. 17. Forward current IF versus VF
Fig. 18. Reverse recovery charge Qr
versus -diF/dt
Fig. 19. Peak reverse current IRM
versus -diF/dt
2.0
90
20
V
1.00
µs
T = 100°C
IFVJ = 30A
T = 100°C
VVRJ= 300V
ns
VFR
tfr
VFR
trr
1.5
Kf
15
0.75
0.50
0.25
0.
tfr
80
I = 60A
IF= 30A
IFF= 15A
1.0
10
5
IRM
70
60
0.5
Qr
0.0
0
A/µs
0
40
80
120
160
0
200 400 600 800 1000
0
200 400 600 800 1000
°C
A/µs
diF/dt
TVJ
-diF/dt
Fig. 20. Dynamic parameters Q , I
Fig. 20. Dynamic parameters Q ,RIM
Fig. 21. Recovery time trr versus
-diF/dt
Fig. 22. Peak forward voltage VFR
and tfr versus diF/dt
r
r
RM
versus T
versus T
VJ
VJ
1
K/W
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
0.502
0.193
0.205
0.0052
0.0003
0.0162
0.1
ZthJC
0.01
DSEP 29-06
0.001
s
0.00001
0.0001
0.001
0.01
0.1
1
t
Fig. 23. Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
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