IXGH85N30C3 [IXYS]
GenX3 300V IGBT; GenX3 300V IGBT
| 型号： | IXGH85N30C3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GenX3 300V IGBT |
| 文件： | 总6页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
GenX3TM 300V IGBT
VCES = 300V
IC110 = 85A
VCE(sat) ≤ 1.9V
tfi typ = 70ns
IXGH85N30C3
High Speed PT IGBTs for
50-150kHz switching
TO-247 AD
(IXGH)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
300
300
V
V
TJ = 25°C to 150°C, RGE = 1MΩ
G
VGES
VGEM
Continuous
Transient
20
30
V
V
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
IC25
IC110
ICM
TC = 25°C (limited by leads)
TC = 110°C (chip capability)
TC = 25°C, 1ms
75
85
A
A
A
420
IA
TC = 25°C
TC = 25°C
85
A
EAS
400
mJ
Features
SSOA
V
GE= 15V, TVJ = 125°C, RG = 3.3Ω
ICM = 170
A
z
High Frequency IGBT
Square RBSOA
High avalanche capability
Drive simplicity with MOS Gate
Turn-On
z
z
z
(RBSOA)
Clamped inductive load @ ≤ 300V
TC = 25°C
PC
333
W
TJ
-55 ... +150
150
°C
°C
°C
z
High current handling capability
TJM
Tstg
-55 ... +150
Applications
TL
TSOLD
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
300
260
°C
°C
z PFC Circuits
z PDP Systems
z Switched-mode and resonant-mode
converters and inverters
z SMPS
Md
Mounting torque (TO-247)
1.13/10
6
Nm/lb.in.
g
Weight
z AC motor speed control
z DC servo and robot drives
z DC choppers
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
BVCES
VGE(th)
IC = 250µA, VGE = 0V
IC = 250µA, VCE = VGE
300
2.5
V
V
5.0
ICES
VCE = VCES
VGE = 0V
30
750
µA
µA
TJ = 125°C
TJ = 125°C
IGES
VCE = 0V, VGE = 20V
IC = 85A, VGE = 15V
100
1.9
nA
VCE(sat)
1.64
1.67
V
V
© 2007 IXYS CORPORATION, All rights reserved
DS99883A(01-08)
IXGH85N30C3
Symbol
Test Conditions
Characteristic Values
TO-247 AD Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
IC = 0.5 • IC110, VCE = 10V,
35
60
S
Pulse test, t ≤ 300µs; duty cycle, d ≤ 2%.
∅ P
Cies
Coes
Cres
5100
310
80
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
Qg
136
22
nC
nC
nC
e
Qge
Qgc
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
48
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
td(on)
tri
25
34
ns
ns
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
Inductive Load, TJ = 25°C
IC = 0.5 • IC110, VGE = 15V
VCE = 200V, RG = 3.3Ω
Eon
td(off)
tfi
0.20
100
70
mJ
ns
160
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
ns
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Eoff
0.39
0.75 mJ
.780 .800
.177
td(on)
tri
22
33
ns
ns
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
Inductive Load, TJ = 125°C
IC = 0.5 • IC110, VGE = 15V
VCE = 200V, RG = 3.3Ω
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Eon
td(off)
tfi
0.36
120
101
0.48
mJ
ns
ns
Eoff
mJ
RthJC
RthCK
0.375 °C/W
°C/W
0.21
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGH85N30C3
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
180
160
140
120
100
80
350
300
250
200
150
100
50
VGE = 15V
13V
11V
VGE = 15V
13V
11V
9V
9V
7V
5V
60
40
7V
5V
20
0
0
0
0.4
0.8
1.2
1.6
2
2.4
0
1
2
3
4
5
6
7
8
9
10
150
8
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics
@ 125ºC
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
180
160
140
120
100
80
VGE = 15V
13V
11V
VGE = 15V
I C = 170A
9V
I C = 85A
7V
60
40
I C = 43A
20
5V
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50
-25
0
25
50
75
100
125
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
180
160
140
120
100
80
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
TJ = 25ºC
I C = 170A
TJ = - 40ºC
25ºC
125ºC
85A
43A
60
40
20
0
6
7
8
9
10
11
12
13
14
15
3.5
4
4.5
5
5.5
6
6.5
7
7.5
VGE - Volts
VGE - Volts
© 2007 IXYS CORPORATION, All rights reserved
IXGH85N30C3
Fig. 7. Transconductance
Fig. 8. Gate Charge
100
90
80
70
60
50
40
30
20
10
0
16
14
12
10
8
VCE = 150V
I C = 85A
TJ = - 40ºC
25ºC
125ºC
I G = 10 mA
6
4
2
0
0
20
40
60
80
100
120
140
160
180
0
20
40
60
80
100
120
140
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
180
160
140
120
100
80
10,000
1,000
100
C
ies
C
oes
res
60
TJ = 125ºC
40
RG = 3.3Ω
dV / dT < 10V / ns
C
20
f = 1 MHz
5
0
10
50
100
150
200
250
300
0
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH85N30C3
Fig. 13. Inductive Swiching
Fig. 12. Inductive Switching
Energy Loss vs. Collector Current
Energy Loss vs. Gate Resistance
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.3
1.1
0.9
0.7
0.5
0.3
0.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
E
E
on - - - -
off
E
E
on - - - -
off
TJ = 125ºC , VGE = 15V
VCE = 200V
RG = 3.3
VGE = 15V
Ω ,
VCE = 200V
I C = 85A
TJ = 125ºC
TJ = 25ºC
I C = 42.5A
20
30
40
50
60
70
80
90
2
4
6
8
10
12
14
16
18
RG - Ohms
IC - Amperes
Fig. 14. Inductive Swiching
Fig. 15. Inductive Turn-off
Energy Loss vs. Junction Temperature
Switching Times vs. Gate Resistance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
160
150
140
130
120
110
100
90
380
340
300
260
220
180
140
100
I C = 85A
I C = 85A
t f
td(off) - - - -
V
GE = 15V
E
E
on - - - -
VGE = 15V
,
off
TJ = 125ºC,
RG = 3.3
Ω
CE = 200V
V
VCE = 200V
I C = 42.5A
I C = 42.5A
25
35
45
55
65
75
85
95 105 115 125
2
4
6
8
10
12
14
16
18
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
170
150
130
110
90
130
125
120
115
110
105
100
95
180
170
160
150
140
130
120
110
100
90
125
120
115
110
105
100
95
t f
td(off) - - - -
GE
tf
td(off) - - - -
RG = 3.3 , V = 15V
Ω
RG = 3.3 , VGE = 15V
Ω
VCE = 200V
VCE = 200V
TJ = 125ºC
I
= 85A
C
I C = 42.5A
70
TJ = 25ºC
80
50
70
30
60
15
25
35
45
55
65
75
85
25
35
45
55
65
75
85
95 105 115 125
IC - Amperes
TJ - Degrees Centigrade
© 2007 IXYS CORPORATION, All rights reserved
IXGH85N30C3
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
120
110
100
90
80
70
60
50
40
30
20
10
0
50
45
40
35
30
25
20
90
80
70
60
50
40
30
20
10
34
32
30
28
26
24
22
20
18
tr
td(on) - - - -
t r
td(on) - - - -
TJ = 125ºC, VGE = 15V
VCE = 200V
RG = 3.3 , VGE = 15V
Ω
I C = 85A
TJ = 25ºC
VCE = 200V
I C = 42.5A
TJ = 125ºC
2
4
6
8
10
12
14
16
18
20 25 30 35 40 45 50 55 60 65 70 75 80 85
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
80
75
70
65
60
55
50
45
40
35
30
25
20
32
31
30
29
28
27
26
25
24
23
22
21
20
I C = 85A
tr
td(on)
- - - -
RG = 3.3 , VGE = 15V
Ω
VCE = 200V
I C = 42.5A
25
35
45
55
65
75
85
95
105 115 125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_85N30C3(65)08-21-07
相关型号：
IXGJ50N60C4D1
Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247, ISOLATED TO-247, 3 PIN
IXYS
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