IXGP20N100A3 [IXYS]
Insulated Gate Bipolar Transistor, 40A I(C), 1000V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN;
| 型号： | IXGP20N100A3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 40A I(C), 1000V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN 栅 |
| 文件： | 总5页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
GenX3TM 1000V
IGBTs
IXGA20N100A3
IXGP20N100A3
IXGH20N100A3
VCES = 1000V
IC90 = 20A
VCE(sat) ≤ 2.3V
Ultra-Low Vsat PT IGBTs for
up to 3kHz Switching
TO-263 (IXGA)
G
E
C (Tab)
Symbol
Test Conditions
Maximum Ratings
TO-220 (IXGP)
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
1000
1000
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
C (Tab)
E
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
40
20
A
A
A
TO-247 (IXGH)
100
SSOA
(RBSOA)
VGE= 15V, TJ = 125°C, RG = 50Ω
Clamped Inductive Load
ICM = 40
A
V
@VCE ≤ 800
PC
TC = 25°C
150
W
G
C
E
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
C (Tab)
-55 ... +150
G = Gate
C
= Collector
E = Emitter
Tab = Collector
Md
FC
Mounting Torque (TO-247 & TO-220)
Mounting Force (TO-263)
1.13/10
10..65 / 2.2..14.6
Nm/lb.in.
N/lb.
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
300
260
°C
°C
Features
z
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
Optimized for Low Conduction Losses
International Standard Packages
z
Advantages
z
High Power Density
Low Gate Drive Requirement
z
Symbol
Test Conditions
Characteristic Values
Applications
(TJ = 25°C, Unless Otherwise Specified)
Min.
1000
2.5
Typ.
Max.
z
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
V
V
z
5.0
z
z
25 μA
500 μA
z
TJ = 125°C
TJ = 125°C
z
z
IGES
VCE = 0V, VGE = ±20V
±100 nA
z
VCE(sat)
IC = 20A, VGE = 15V, Note 1
2.1
2.3
2.3
V
V
z
Inrush Current Protection Circuits
DS100358(07/11)
© 2011 IXYS CORPORATION, All Rights Reserved
IXGA20N100A3 IXGP20N100A3
IXGH20N100A3
Symbol
Test Conditions
Characteristic Values
TO-247 Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = 20A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
9
16
S
Cies
Coes
Cres
1110
56
pF
pF
pF
15
Qg(on)
Qge
40.0
6.7
nC
nC
nC
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
Qgc
15.5
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
34
ns
ns
Resistive Switching Times, TJ = 25°C
IC = 20A, VGE = 15V
110
75
ns
ns
VCE = 800V, RG = 10Ω
1090
1 = Gate
2 = Collector
3 = Emitter
37
ns
ns
Resistive Switching Times, TJ = 125°C
IC = 20A, VGE = 15V
125
80
ns
ns
VCE = 800V, RG = 10Ω
1550
RthJC
RthCK
0.83 °C/W
TO-220
TO-247
0.50
0.21
°C/W
°C/W
Note:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-220 Outline
TO-263 Outline
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
Pins: 1 - Gate
3 - Emitter
2 - Collector
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGA20N100A3 IXGP20N100A3
IXGH20N100A3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
160
140
120
100
80
40
35
30
25
20
15
10
5
VGE = 15V
13V
VGE = 15V
11V
10V
9V
8V
7V
13V
11V
10V
9V
60
6V
5V
8V
7V
40
20
6V
5V
0
0
0
0
5
0.5
1
1.5
2
2.5
3
3.5
4.5
15
0
5
10
15
20
25
30
150
9.5
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
40
35
30
25
20
15
10
5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGE = 15V
VGE = 15V
13V
11V
10V
I C = 40A
9V
8V
7V
6V
I C = 20A
I C = 10A
5V
0
0.5
1
1.5
2
2.5
3
3.5
4
-50
-25
0
25
50
75
100
125
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
60
50
40
30
20
10
0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
TJ = - 40ºC
TJ = 25ºC
25ºC
125ºC
I C = 40A
20A
10A
6
7
8
9
10
11
12
13
14
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
VGE - Volts
VGE - Volts
© 2011 IXYS CORPORATION, All Rights Reserved
IXGA20N100A3 IXGP20N100A3
IXGH20N100A3
Fig. 7. Transconductance
Fig. 8. Gate Charge
16
14
12
10
8
28
24
20
16
12
8
VCE = 500V
TJ = - 40ºC
I
C = 20A
I G = 10mA
25ºC
125ºC
6
4
4
2
0
0
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
IC - Amperes
QG - NanoCoulombs
Fig. 9. Reverse-Bias Safe Operating Area
Fig. 10. Capacitance
10,000
1,000
100
45
40
35
30
25
20
15
10
5
= 1 MHz
f
C
ies
C
oes
TJ = 125ºC
RG = 50Ω
dv / dt < 10V / ns
C
res
0
10
200
300
400
500
600
700
800
900
1000
0
5
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA20N100A3 IXGP20N100A3
IXGH20N100A3
Fig. 12. Resistive Turn-on Rise Time
vs. Junction Temperature
Fig. 13. Resistive Turn-on Rise Time
vs. Collector Current
200
180
160
140
120
100
80
180
160
140
120
100
80
RG = 10Ω, VGE = 15V
CE = 800V
RG = 10Ω, VGE = 15V
V
VCE = 800V
TJ = 125ºC
I C = 40A
TJ = 25ºC
I C = 20A
25
35
45
55
65
75
85
95
105
115
125
20
22
24
26
28
30
32
34
36
38
40
IC - Amperes
TJ - Degrees Centigrade
Fig. 14. Resistive Turn-on Switching Times
vs. Gate Resistance
Fig. 15. Resistive Turn-off Switching Times
vs. Junction Temperature
200
190
180
170
160
150
140
130
120
110
100
75
70
65
60
55
50
45
40
35
30
25
1700
1600
1500
1400
1300
1200
1100
1000
900
90
85
80
75
70
65
60
55
50
tr
td(on)
- - - -
tf
td(off)
- - - -
TJ = 125ºC, VGE = 15V
RG = 10Ω, VGE = 15V
I C = 40A
VCE = 800V
VCE = 800V
I C = 20A
I C = 20A
I C = 40A
10
20
30
40
50
60
70
80
90
100
25
35
45
55
65
75
85
95
105
115
125
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times
vs. Gate Resistance
Fig. 16. Resistive Turn-off Switching Times
vs. Collector Current
1800
1700
1600
1500
1400
1300
1200
600
1700
1600
1500
1400
1300
1200
1100
1000
900
90
85
80
75
70
65
60
55
50
tf
td(off)
- - - -
TJ = 125ºC, VGE = 15V
tf
td(off
) - - - -
RG = 10Ω, VGE = 15V
500
400
300
200
100
0
VCE = 800V
VCE = 800V
I C = 20A
TJ = 125ºC
I C = 40A
TJ = 25ºC
20
22
24
26
28
30
32
34
36
38
40
10
20
30
40
50
60
70
80
90
100
IC - Amperes
RG - Ohms
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_20N100A3(3M)7-06-11-A
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