IXGR50N60B2D1 [IXYS]

B2-Class High Speed IGBTs (Electrically Isolated Back Surface);


型号：	IXGR50N60B2D1
厂家：	IXYS CORPORATION
描述：	B2-Class High Speed IGBTs (Electrically Isolated Back Surface) 双极性晶体管
文件：	总6页 (文件大小：518K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HiPerFAST^TMIGBT

ISOPLUS247^TM

IXGR 50N60B2

IXGR 50N60B2D1

V_CES

I_C25

V_CE(sat)

t_fi(typ)

= 600 V

= 68 A

= 2.2 V

= 65 ns

B2-Class High Speed IGBTs

(Electrically Isolated Back Surface)

Preliminary Data Sheet

IXGR_B2

IXGR_B2D1

Symbol

TestConditions

Maximum Ratings

ISOPLUS247

(IXGR)

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MΩ

(ISOLATED TAB)

V_GES

V_GEM

Continuous

Transient

±20

±30

G = Gate

C = Collector

E = Emitter

I_C25

I_C110

I_F110

I_CM

T_C= 25°C (limited by leads)

T_C= 110°C

Features

T_C= 110°C (50N60B2D1 Diode)

T_C= 25°C, 1 ms

300

DCB Isolated mounting tab

Meets TO-247AD package Outline

High current handling capability

Latest generation HDMOS^TMprocess

MOS Gate turn-on

SSOA

V_GE= 15 V, T_VJ= 125°C, R_G= 10 Ω

Clamped inductive load @ V_CE≤ 600 V

I_CM= 100

(RBSOA)

P_C

T_C= 25°C

200

- drive simplicity

T_J

-55 ... +150

150

°C

Applications

T_JM

T_stg

-55 ... +150

Uninterruptible power supplies (UPS)

Switched-mode and resonant-mode

V_ISOL

50/60 Hz RMS, t = 1m

2500

power supplies

AC motor speed control

DC servo and robot drives

DC choppers

Weight

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Advantages

Easy assembly

High power density

Very fast switching speeds for high

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ. Max.

frequency applications

V_GE(th)

I_CES

I_C= 250 µA, V_CE= V_GE

3.0

5.0

V_CE= V_CES

V_GE= 0 V

50N60B2

50N60B2D1

650

µA

I_GES

V_CE= 0 V, V_GE= ±20 V

±100

2.2

V_CE(sat)

I_C= 40 A, V_GE= 15 V

Note 1

1.8

1.7

T_J= 125°C

DS99144A(05/04)

IXGR 50N60B2

IXGR 50N60B2D1

Symbol

g_fs

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ. Max.

ISOPLUS 247 Outline

I_C= 40 A; V_CE= 10 V,

Note 1

C_ies

C_oes

3500

240

280

V_CE= 25 V, V_GE= 0 V, f = 1 MHz

50N60B2

50N60B2D1

C_res

Q_g

140

Q_ge

Q_gc

I_C= 40 A, V_GE= 15 V, V_CE= 0.5 V_CES

Inductive load, T_J= 25°C

I_C= 40 A, V_GE= 15 V

t_d(on)

t_ri

t_d(off)

t_fi

V_CE= 480 V, R_G= R_off= 5.0 Ω

190 300 ns

65 ns

0.55 0.85 mJ

E_off

t_d(on)

t_ri

Inductive load, T_J= 125°C

I_C= 40 A, V_GE= 15 V

E_on

t_d(off)

t_fi

0.9

V_CE= 480 V, R_G= R_off= 5.0 Ω

290

140

1.55

E_off

R_thJ-DCB

R_thJC

R_thCS

(Note 2)

(Note 3)

0.31

0.15

K/W

0.62 K/W

K/W

Reverse Diode (FRED)

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Symbol

V_F

TestConditions

I_F= 60 A, V_GE= 0 V,

Note 1

2.0

1.39

T_J= 150°C

I_RM

I_F= 60 A, V_GE= 0 V, -di_F/dt = 100 A/µ T_J= 100°C

V_R= 100 V

8.3

t_rr

I_F= 1 A; -di/dt = 200 A/ms; V_R= 30 V

0.85 K/W

R_thJC

Notes 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

2: R_thJ-DCBis the thermal resistance junction-to-internal side of DCB substrate.

3: R_thJCis the thermal resistance junction-to-external side of DCB substrate.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecovered byoneormore

ofthefollowingU.S.patents:

4,850,072

4,835,592

4,931,844

4,881,106

5,034,796

5,017,508

5,063,307

5,049,961

5,237,481

5,187,117

5,381,025

5,486,715

6,404,065B1 6,162,665

6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

6,534,343

6,583,505

IXGR 50N60B2

IXGR 50N60B2D1

Fig. 1. Output Characteristics

@ 25 Deg. C

Fig. 2. Extended Output Characteristics

@ 25 deg. C

320

280

240

200

160

120

V_GE= 15V

13V

11V

V_GE= 15V

11V

13V

0.5

1.5

2.5

-50

V_{C E}- Volts

Fig. 3. Output Characteristics

@ 125 Deg. C

Fig. 4. Dependence of V_CE(sat)on

Temperature

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V_GE= 15V

13V

11V

V_GE= 15V

I_C= 80A

I_C= 40A

I_C= 20A

1.5

V_CE- Volts

2.5

-25

100 125 150

T_J- Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter voltage

Fig. 6. Input Admittance

3.7

3.4

3.1

2.8

2.5

2.2

1.9

1.6

1.3

200

180

160

140

120

100

T_J= 25ºC

I_C= 80A

40A

20A

T_J= 125ºC

25ºC

-40ºC

10 11 12 13 14 15 16 17

V_{G E}- Volts

4.5

5.5

6.5

V_{G E}- Volts

7.5

8.5

IXGR 50N60B2

IXGR 50N60B2D1

Fig. 8. Dependence of Turn-Off

Ene r gy on R_G

Fig. 7. Transconductance

4.5

T_J= 125ºC

_GE= 15V

V_CE= 480V

T_J= -40ºC

25ºC

125ºC

I_C= 80A

3.5

2.5

I_C= 40A

1.5

I_C= 20A

0.5

20 40 60 80 100 120 140 160 180 200

25 30

I _C- Amperes

R _G- Ohms

Fig. 9. Dependence of Turn-Off

Ene r gy on I_C

Fig. 10. Dependence of Turn-Off

Energy on Temperature

3.5

R_G= 5Ω

R_G= 24.4 Ω - - - -

V_GE= 15V

R_G= 5Ω

R_G= 24.4Ω - - -

I_C= 80A

V_GE= 15V

V_CE= 480V

2.5

T_J= 125ºC

I_C= 40A

1.5

T_J= 25ºC

0.5

I_C= 20A

40 50

I _C- Amperes

25 35 45 55 65 75 85 95 105 115 125

T_J- Degrees Centigrade

Fig. 11. Dependence of Turn-Off

Switching Time on R_G

Fig. 12. Dependence of Turn-Off

Switching Time on I_C

400

350

300

250

200

150

100

1000

500

t_d(off)

t_fi

R_G= 5Ω

t_d(off)

t -

- - - - - -

- - - - -

T_J= 125ºC

V_GE= 15V

_CE= 480V

V_GE= 15V

V_CE= 480V

T_J= 125ºC

I_C= 20A

I_C= 40A

I_C= 80A

T_J= 25ºC

100

25 30

R _G- Ohms

40 50

I _C- Amperes

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecovered byoneormore

ofthefollowingU.S.patents:

4,850,072

4,835,592

4,931,844

4,881,106

5,034,796

5,017,508

5,063,307

5,049,961

5,237,481

5,187,117

5,381,025

5,486,715

6,404,065B1 6,162,665

6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

6,534,343

6,583,505

IXGR 50N60B2

IXGR 50N60B2D1

Fig. 13. Dependence of Turn-Off

Switching Time on Temperature

Fig. 14. Reverse-Bias

Safe Operating Area

350

300

250

200

150

100

t_d(off)

t -

- - - - -

R_G= 5Ω

_GE= 15V

V_CE= 480V

I_C= 20A

I_C= 40A

I_C= 80A

T_J= 125 C

R_G= 10Ω

dV/dT < 10V/ns

25 35 45 55 65 75 85 95 105 115 125

T_J- Degrees Centigrade

100

200

300 400

V _{C E}- Volts

500

600

Fig. 16. Capacitance

Fig. 15. Gate Charge

10000

1000

100

V_CE= 300V

I_C= 40A

f = 1 MHz

_G= 10mA

ies

oes

res

120

150

V_{C E}- Volts

Q _G- nanoCoulombs

Fig. 17. M axim um Trans ie nt The rm al Re s is tance

0.70

0.60

0.50

0.40

0.30

0.20

0.10

0.00

100

1000

Pulse Width - milliseconds

IXGR 50N60B2

IXGR 50N60B2D1

160

140

4000

T_VJ= 100°C

V_R= 300V

T_VJ= 100°C

V_R= 300V

120

100

3000

2000

1000

I_F

T_VJ= 25°C

T_VJ=100°C

I_F=120A

I_F= 60A

I_F= 30A

I_RM

Q_r

I_F=120A

I_F= 60A

I_F= 30A

T_VJ=150°C

A/µs

-di_F/dt

100

1000

200 400 600 800 1000

A/µs

-di_F/dt

V_F

Fig. 19 Reverse recovery charge Q_r

versus -di_F/dt

Fig. 20 Peak reverse current I_RM

versus -di_F/dt

Fig. 18 Forward current I_Fversus V_F

2.0

140

1.6

µs

T_VJ= 100°C

V_R= 300V

130

V_FR

t_fr

t_rr

1.5

K_f

1.2

V_FR

t_fr

120

110

100

I_F=120A

I_F= 60A

I_F= 30A

1.0

0.8

0.4

0.0

I_RM

0.5

Q_r

T_VJ= 100°C

I_F= 60A

0.0

A/µs

120

160

200 400 600 800 1000

°C

A/µs

di_F/dt

T_VJ

-di_F/dt

Fig. 21 Dynamic parameters Q_r, I_RM

versus T_VJ

Fig. 22 Recovery time t_rrversus -di_F/dt

Fig. 23 Peak forward voltage V_FRand

t_fr

versus di_F/dt

Constants for Z_thJCcalculation:

K/W

R_thi(K/W)

t_i(s)

0.1

0.3073

0.3533

0.0887

0.1008

0.0055

0.0092

0.0007

0.0399

Z_thJC

0.01

0.001

DSEP 2x61-06A

0.0001

0.00001

0.0001

0.001

0.01

0.1

Fig. 24 Transient thermal resistance junction to case

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecovered byoneormore

ofthefollowingU.S.patents:

4,850,072

4,835,592

4,931,844

4,881,106

5,034,796

5,017,508

5,063,307

5,049,961

5,237,481

5,187,117

5,381,025

5,486,715

6,404,065B1 6,162,665

6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

6,534,343

6,583,505

IXGR50N60B2D1 [IXYS]

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