IXGX120N120A3 [IXYS]
GenX3 A3-Class IGBTs; GenX3 A3级的IGBT
| 型号： | IXGX120N120A3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GenX3 A3-Class IGBTs |
| 文件： | 总6页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
GenX3TM A3-Class
IGBTs
VCES = 1200V
IC110 = 120A
VCE(sat) ≤ 2.20V
IXGK120N120A3
IXGX120N120A3
Ultra-Low Vsat PT IGBTs for
up to 3kHz Switching
TO-264 (IXGK)
Symbol
VCES
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Maximum Ratings
G
1200
1200
±20
V
V
V
V
C
(TAB)
E
VCGR
VGES
PLUS 247TM (IXGX)
VGEM
Transient
±30
IC25
TC = 25°C ( Chip Capability )
TC = 110°C
240
120
75
A
A
A
A
IC110
ILRMS
ICM
Terminal Current Limit
TC = 25°C, 1ms
600
SSOA
(RBSOA)
VGE= 15V, TVJ = 125°C, RG = 1Ω
Clamped Inductive Load
ICM = 240
A
G
C
E
(TAB)
@ 0.8 • VCES
PC
TC = 25°C
830
W
G = Gate
C = Collector
E
= Emitter
TJ
-55 ... +150
150
°C
°C
°C
TAB = Collector
TJM
Tstg
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
300
260
°C
°C
Features
z Optimized for Low Conduction Losses
z Square RBSOA
z High Avalanche Capability
z International Standard Packages
Md
FC
Mounting Torque ( IXGK )
Mounting Force ( IXGX )
1.13/10
20..120/4.5..27
Nm/lb.in.
N/lb.
Weight
TO-264
PLUS247
10
6
g
g
Advantages
z High Power Density
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
1200
3.0
Typ.
Max.
z Low Gate Drive Requirement
BVCES
VGE(th)
ICES
IC = 250μA, VCE = 0V
IC = 1mA, VCE = VGE
VCE = VCES, VGE = 0V
V
Applications
5.0
V
z Power Inverters
z UPS
50 μA
TJ = 125°C
3 mA
z Motor Drives
IGES
VCE = 0V, VGE = ±20V
±400 nA
z SMPS
VCE(sat)
IC = 100A, VGE = 15V, Note 1
1.85 2.20
V
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
z Inrush Current Protection Circuits
DS99977(02/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXGK120N120A3
IXGX120N120A3
Symbol
Test Conditions
Characteristic Values
TO-264 (IXGK) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = 60A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1 MHz
45
73
S
Cies
Coes
Cres
Qg(on)
Qge
Qgc
td(on)
tri
9900
655
240
420
70
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
180
40
67
Inductive load, TJ = 25°C
Eon
td(off)
tfi
10
IC = 100A, VGE = 15V
490
325
33
VCE = 960V, RG = 1Ω
Note 2
Eoff
td(on)
tri
mJ
ns
30
Inductive load, TJ = 125°C
IC = 100A, VGE = 15V
VCE = 960V, RG = 1Ω
Note 2
75
ns
Eon
td(off)
tfi
15
mJ
ns
685
680
58
ns
Eoff
RthJC
RthCK
mJ
0.15 °C/W
°C/W
0.15
PLUS 247TM (IXGX) Outline
Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.
2. Switching Times may Increase for VCE (Clamp) > 0.8 VCES
Higher TJ or Increased RG.
,
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
PRELIMINARY TECHNICAL INFORMATION
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGK120N120A3
IXGX120N120A3
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
240
220
200
180
160
140
120
100
80
360
320
280
240
200
160
120
80
VGE = 15V
13V
11V
VGE = 15V
13V
11V
9V
9V
7V
5V
7V
60
40
40
20
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
3.5
15
0
1
2
3
4
5
6
7
8
9
10
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
240
220
200
180
160
140
120
100
80
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VGE = 15V
13V
11V
VGE = 15V
I C = 240A
9V
I C = 120A
7V
60
40
I C = 60A
5V
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
-25
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
200
180
160
140
120
100
80
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
TJ = 25ºC
I C = 240A
TJ = 125ºC
25ºC
- 40ºC
60
120A
40
20
60A
0
6
7
8
9
10
11
12
13
14
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
VGE - Volts
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXGK120N120A3
IXGX120N120A3
Fig. 7. Transconductance
Fig. 8. Gate Charge
120
110
100
90
80
70
60
50
40
30
20
10
0
16
14
12
10
8
TJ = - 40ºC
VCE = 600V
C = 120A
I G = 10mA
I
25ºC
125ºC
6
4
2
0
0
20
40
60
80
100 120 140 160 180 200
0
50
100
150
200
250
300
350
400
450
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
280
240
200
160
120
80
100,000
10,000
1,000
100
= 1MHz
f
C
ies
C
oes
TJ = 125ºC
RG = 1Ω
40
dV / dt < 10V / ns
C
res
0
0
5
10
15
20
25
30
35
40
200 300 400 500 600 700 800 900 1000 1100 1200
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_120N120A3(9P)2-19-09
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
90
80
70
60
50
40
30
20
10
0
20
18
16
14
12
10
8
90
80
70
60
50
40
30
20
10
36
32
28
24
20
16
12
8
E
E
on - - - -
off
RG = 1
E
E
on - - - -
off
VGE = 15V
Ω ,
VCE = 960V
TJ = 125ºC , VGE = 15V
VCE = 960V
TJ = 125ºC
I C = 100A
6
TJ = 25ºC
4
I C = 50A
2
4
50
55
60
65
70
75
80
85
90
95
100
1
2
3
4
5
6
7
8
9
10
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
900
850
800
750
700
650
600
550
500
450
400
1500
1400
1300
1200
1100
1000
900
90
80
70
60
50
40
30
20
10
0
20
18
16
14
12
10
8
t f
TJ = 125ºC, GE = 15V
td(off)
- - - -
V
E
E
on - - - -
off
RG = 1Ω VGE = 15V
,
VCE = 960V
I C = 100A
CE = 960V
V
I C = 50A
I C = 100A
800
6
700
I C = 50A
I C = 50A
4
600
500
2
1
2
3
4
5
6
7
8
9
10
25
35
45
55
65
75
85
95
105 115 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
900
800
700
600
500
400
300
200
100
1150
1050
950
850
750
650
550
450
350
1000
900
800
700
600
500
400
300
200
100
1200
1100
1000
900
800
700
600
500
400
300
tf
RG = 1Ω , VGE = 15V
td(off)
- - - -
t f
RG = 1Ω , VGE = 15V
td(off) - - - -
VCE = 960V
VCE = 960V
I
= 50A, 100A
C
TJ = 125ºC
TJ = 25ºC
50
55
60
65
70
75
80
85
90
95 100
25
35
45
55
65
75
85
95 105 115 125
TJ - Degrees Centigrade
IC - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
IXGK120N120A3
IXGX120N120A3
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
110
100
90
80
70
60
50
40
30
20
60
55
50
45
40
35
30
25
20
15
160
140
120
100
80
90
80
70
60
50
40
30
20
10
tr
RG = 1Ω , VGE = 15V
td(on) - - - -
tr
TJ = 125ºC, VGE = 15V
td(on) - - - -
VCE = 960V
VCE = 960V
I C = 100A
TJ = 125ºC, 25ºC
60
I C = 50A
40
20
0
50
55
60
65
70
75
80
85
90
95
100
1
2
3
4
5
6
7
8
9
10
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
100
90
80
70
60
50
40
30
20
54
50
46
42
38
34
30
26
22
tr
RG = 1Ω , VGE = 15V
td(on) - - - -
VCE = 960V
I C = 100A
I C = 50A
25
35
45
55
65
75
85
95
105 115 125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_120N120A3(9P)2-19-09
相关型号：
IXGX32N170H1
Insulated Gate Bipolar Transistor, 75A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, PLUS247, 3 PIN
IXYS
©2020 ICPDF网 联系我们和版权申明