IXGX64N60B3D1 [IXYS]
GenX3 600V IGBT with Diode; GenX3 600V IGBT带二极管
| 型号： | IXGX64N60B3D1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GenX3 600V IGBT with Diode |
| 文件： | 总7页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GenX3TM 600V IGBT
with Diode
VCES
IC110
VCE(sat)
tfi(typ)
= 600V
= 64A
≤£ 1.8V
= 88ns
IXGK64N60B3D1
IXGX64N60B3D1
Medium speed low Vsat PT
IGBTs 5-40 kHz switching
TO-264 (IXGK)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
600
600
V
V
G
C
E
VGES
VGEM
Continuous
Transient
±20
±30
V
V
(TAB)
IC110
TC = 110°C
64
400
A
A
A
PLUS247 (IXGX)
ICM
TC = 25°C, 1ms
SSOA
(RBSOA)
PC
VGE = 15V, TVJ = 125°C, RG = 3Ω
ICM = 200
Clamped inductive load @ VCE ≤ 600V
TC = 25°C
460
W
G
C
E
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
G = Gate
C
= Collector
-55 ... +150
E = Emitter
TAB = Collector
Md
FC
Mounting torque (TO-264)
Mounting force (PLUS247)
1.13 / 10
20..120 / 4.5..27
Nm/lb.in.
N/lb.
Features
TL
TSOLD
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
300
260
°C
°C
z Optimized for low conduction and
switching losses
Weight
TO-264
PLUS247
10
6
g
g
z Square RBSOA
z Anti-parallel ultra fast diode
z International standard packages
Advantages
z High power density
z Low gate drive requirement
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
Applications
VGE(th)
ICES
IC = 250μA, VCE = VGE
3.0
5.0
V
z Power Inverters
z UPS
VCE = VCES
VGE = 0V
700
2.5 mA
μA
z Motor Drives
z SMPS
TJ = 125°C
IGES
VCE = 0V, VGE = ±20V
±100
1.80
nA
V
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
VCE(sat)
IC = 50A, VGE = 15V, Note 1
1.59
DS99939A(06/08)
© 2008 IXYS CORPORATION, All rights reserved
IXGK64N60B3D1
IXGX64N60B3D1
Symbol
Test Conditions
Characteristic Values
TO-264 (IXGK) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
IC = 50A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
38
64
S
Cies
Coes
Cres
4750
260
65
pF
pF
pF
Qg
168
28
nC
nC
nC
Qge
Qgc
IC = 50A, VGE = 15V, VCE = 0.5 • VCES
61
td(on)
tri
25
41
ns
ns
Inductive load, TJ = 25°C
IC = 50A, VGE = 15V
Eon
td(off)
tfi
1.5
138
88
mJ
ns
VCE = 480V, RG = 3Ω
150
1.9
ns
DIM
INCHES
MIN
MILLIMETERS
MAX
MIN
MAX
Eoff
1.0
mJ
A
A1
b
b1
b2
c
D
E
e
J
0.185
0.102
0.037
0.087
0.110
0.017
1.007
0.760
.215 BSC
0.000
0.000
0.779
0.087
0.122
0.240
0.330
0.155
0.085
0.243
0.209
0.118
0.055
0.102
0.126
0.029
1.047
0.799
4.70
2.59
0.94
2.21
2.79
0.43
25.58
19.30
5.46 BSC
0.00
0.00
19.79
2.21
3.10
6.10
8.38
3.94
2.16
6.17
5.31
3.00
1.40
2.59
3.20
0.74
26.59
20.29
td(on)
tri
24
40
ns
ns
Inductive load, TJ = 125°C
IC = 50A,VGE = 15V
Eon
td(off)
tfi
2.70
195
131
1.95
mJ
ns
V
CE = 480V, RG = 3Ω
ns
0.010
0.010
0.842
0.102
0.138
0.256
0.346
0.187
0.093
0.253
0.25
0.25
21.39
2.59
3.51
6.50
8.79
4.75
2.36
6.43
Eoff
mJ
K
L
L1
ØP
Q
Q1
ØR
ØR1
S
RthJC
RthCS
0.27 °C/W
°C/W
0.15
PLUS247TM (IXGX) Outline
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
VF
Test Conditions
Min.
Typ.
Max.
IF = 60A, VGE = 0V, Note 1
2.1
V
TJ = 150°C
TJ = 100°C
1.4
V
IRM
IF = 60A, VGE = 0V,
-diF/dt = 100A/μs, VR = 100V
8.3
A
trr
IF = 1A, -di/dt = 200A/μs, VR = 30V
35
ns
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
RthJC
1.35 °C/W
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXGK64N60B3D1
IXGX64N60B3D1
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
100
90
80
70
60
50
40
30
20
10
0
300
250
200
150
100
50
VGE = 15V
11V
VGE = 15V
13V
11V
9V
9V
7V
7V
5V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VCE - Volts
0
1
2
3
4
5
6
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
100
90
80
70
60
50
40
30
20
10
0
VGE = 15V
11V
VGE = 15V
I C = 100A
9V
7V
I C = 50A
I C = 25A
5V
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VCE - Volts
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
200
180
160
140
120
100
80
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
TJ = 25ºC
TJ = 125ºC
25ºC
- 40ºC
I C = 100A
50A
25A
60
40
20
0
5
6
7
8
9
10
11
12
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
VGE - Volts
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
IXGK64N60B3D1
IXGX64N60B3D1
Fig. 7. Transconductance
Fig. 8. Gate Charge
110
100
90
80
70
60
50
40
30
20
10
0
16
14
12
10
8
TJ = - 40ºC
VCE = 300V
I C = 50A
I G = 10 mA
25ºC
125ºC
6
4
2
0
0
20
40
60
80
100 120 140 160 180 200
0
20
40
60
80
100
120
140
160
180
IC - Amperes
QG - NanoCoulombs
Fig. 10. Capacitance
Fig. 9. Reverse-Bias Safe Operating Area
10,000
1,000
100
220
200
180
160
140
120
100
80
C
ies
C
oes
60
TJ = 125ºC
C
40
res
RG = 3
Ω
dV / dt < 10V / ns
= 1 MHz
5
f
20
0
10
100
200
300
400
500
600
0
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGK64N60B3D1
IXGX64N60B3D1
Fig. 13. Inductive Switching Energy Loss vs.
Junction Temperature
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
6
5
7
6
5
4
3
2
1
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-0.5
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
E
E
on - - - -
I C = 84A
off
RG = 3
I C = 84A
VGE = 15V
,
Ω
VCE = 480V
4
E
E
on - - - -
off
3
TJ = 125ºC , VGE = 15V
VCE = 480V
I C = 42A
I C = 42A
2
1
0
I C = 21A
I C = 21A
-1
25
35
45
55
65
75
85
95
105 115 125
0
5
10
15
20
25
30
35
RG - Ohms
TJ - Degrees Centigrade
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
5.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
180
170
160
150
140
130
120
110
100
900
800
700
600
500
400
300
200
100
E
E
on - - - -
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-0.5
off
RG = 3
TJ = 125ºC
VGE = 15V
,
Ω
tf
t
d(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 480V
I C = 21A, 42A, 84A
VCE = 480V
I C = 42A
TJ = 25ºC
I C = 21A
30 35
20 25 30 35 40 45 50 55 60 65 70 75 80 85
IC - Amperes
0
5
10
15
20
25
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times
vs. Junction Temperature
Fig. 17. Inductive Turn-off Switching Times
vs. Collector Current
180
170
160
150
140
130
120
110
100
90
205
190
175
160
145
130
115
180
170
160
150
140
130
120
110
100
90
210
200
190
180
170
160
150
140
130
120
110
100
tf
t
d(off) - - - -
RG = 3 , VGE = 15V
TJ = 125ºC
Ω
VCE = 480V
t f
RG = 3 , VGE = 15V
t
d(off) - - - -
Ω
VCE = 480V
I C = 42A, 84A
TJ = 25ºC
80
80
70
I C = 21A
60
70
25
35
45
55
65
75
85
95 105 115 125
20 25 30 35 40 45 50 55 60 65 70 75 80 85
IC - Amperes
TJ - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXGK64N60B3D1
IXGX64N60B3D1
Fig. 18. Inductive Turn-on Switching Times
vs. Gate Resistance
Fig. 19. Inductive Turn-on Switching Times
vs. Junction Temperature
130
120
110
100
90
80
75
70
65
60
55
50
45
40
35
30
25
20
90
80
70
60
50
40
30
20
10
0
30
29
28
27
26
25
24
23
22
21
t r
t
d(on) - - - -
I C = 84A
TJ = 125ºC, VGE = 15V
I C = 84A
VCE = 480V
tr
RG = 3
t
d(on) - - - -
VGE = 15V
Ω
VCE = 480V
80
70
I C = 42A
60
I C = 42A
50
40
30
20
I C = 21A
10
I C = 21A
95 105 115 125
10
0
5
15
20
25
30
35
25
35
45
55
65
75
85
RG - Ohms
TJ - Degrees Centigrade
Fig. 20. Inductive Turn-on Switching Times
vs. Collector Current
75
32
31
30
29
28
27
26
25
24
23
22
21
20
tr
RG = 3
td(on
- - - -
)
70
65
60
55
50
45
40
35
30
25
20
15
,
VGE = 15V
Ω
VCE = 480V
25ºC < TJ < 125ºC
20 25 30 35 40 45 50 55 60 65 70 75 80 85
IC - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_64N60B3(75) 4-09-08-A
IXGK64N60B3D1
IXGX64N60B3D1
160
A
140
4000
nC
80
TVJ= 100°C
VR = 300V
TVJ= 100°C
VR = 300V
A
120
100
80
60
40
20
0
3000
2000
1000
0
60
IF
IRM
Qr
TVJ= 25°C
TVJ=100°C
IF=120A
IF= 60A
IF= 30A
IF=120A
IF= 60A
IF= 30A
40
20
0
TVJ=150°C
A/μs
-diF/dt
0
1
2
V
100
1000
0
200 400 600 1000
A/μs
-diF/dt
VF
Fig. 21. Forward current IF versus VF
2.0
Fig. 22. Reverse recovery charge Qr
versus -diF/dt
Fig. 23. Peak reverse current IRM
versus -diF/dt
140
20
1.6
μs
TVJ= 100°C
VR = 300V
ns
V
130
VFR
tfr
trr
1.5
Kf
15
1.2
tfr
VFR
120
IF=120A
IF= 60A
IF= 30A
1.0
110
10
5
0.8
0.4
0.
IRM
100
90
0.5
Qr
TVJ= 100°C
IF = 60A
0.0
80
0
A/μs
0
40
80
120
160
0
200 400 600 1000
0
200 400 600 1000
°C
A/μs
diF/dt
TVJ
-diF/dt
Fig. 24. Dynamic parameters Qr, IRM
versus TVJ
Fig. 25. Recovery time trr versus -diF/dt
Fig. 26. Peak forward voltage VFR and tfr
versus diF/dt
10.0000
1.0000
ºC / W
0.1000
Z
(th)JC
0.0100
0.0010
0.0001
0.001
0.00001
0.0001
0.01
0.1
1
10
S
t
Fig. 27. Maximum transient thermal impedance junction to case (for diode)
© 2008 IXYS CORPORATION, All rights reserved
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