IXKG25N80C [IXYS]
CoolMOS Power MOSFET ISO264; 的CoolMOS功率MOSFET ISO264
| 型号： | IXKG25N80C |
| 厂家： | 
IXYS CORPORATION |
| 描述： | CoolMOS Power MOSFET ISO264 |
| 文件： | 总2页 (文件大小：500K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ADVANCE TECHNICAL INFORMATION
CoolMOSTM Power MOSFET
IXKG 25N80C
VDSS
ID25
= 800 V
= 25 A
ISO264TM
Electrically Isolated Back Surface
RDS(on) =150 mΩ
N-Channel Enhancement Mode
Low RDS(on), High Voltage MOSFET
ISO264TM
Symbol
Test Conditions
Maximum Ratings
VDSS
VGS
TJ = 25°C to 150°C
800
20
V
V
Continuous
ID25
ID90
TC = 25°C
TC = 90°C
25
9
A
A
G
D
(TAB)
S
ID(RMS)
Package lead current limit
45
A
G = Gate,
S = Source
D = Drain,
EAS
EAR
Io = 10A, TC = 25°C
Io = 20A
690
0.5
mJ
mJ
dv/dt
VDS < VDSS, IF ≤ 17 A, TVJ = 150°C
dIR/dt = 100 A/µs
6
V/ns
* Patent pending
PD
TC = 25°C
250
W
Features
TJ
-55 ... +150
150
°C
°C
°C
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
TJM
Tstg
-55 ... +125
- Isolated mounting surface
- 2500V electrical isolation
z 3RD generation CoolMOS power MOSFET
- High blocking capability
TL
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting torque
300
°C
VISOL
Md
2500
V~
0.9 / 6 Nm/lb-in
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
Weight
8
g
z Low thermal resistance due to reduced
chip thickness
z Low drain to tab capacitance(<40pF)
Applications
Symbol
RDS(on)
Test Conditions
Characteristic Values
z Switched Mode Power Supplies (SMPS)
z Uninterruptible Power Supplies (UPS)
z Power Factor Correction (PFC)
z Welding
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V, I = ID90, Note 1
126
297
150 mΩ
mΩ
VGS = 10 V, IDD = ID90, Note 1 TJ = 125°C
z Inductive Heating
VGS(th)
IDSS
VDS = VGS, ID = 2 mA
2
4
V
Advantages
VDS = V
T = 25°C
50 µA
µA
VGS = 0DVSS
TJJ = 125°C
10
z Easy assembly
z Space savings
z High power density
IGSS
VGS = 20 VDC, VDS = 0
200
nA
CoolMOS is a trademark of Infineon
Technology.
DS99099(10/03)
© 2003 IXYS All rights reserved
IXKG 25N80C
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISO264 OUTLINE
Qg(on)
Qgs
166
18
nC
nC
nC
VGS = 10 V, VDS = 640 V, ID = 17 A
Qgd
84
td(on)
tr
td(off)
tf
25
25
75
10
ns
ns
ns
ns
VGS = 10 V, VDS = 640V
ID = 35 A, RG = 2.2 Ω
RthJC
RthCH
0.5 K/W
K/W
0.30
1 - Gate
Reverse Conduction
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
2 - Drain (Collector)
3 - Source (Emitter)
4 - No Connection
Symbol
VSD
Test Conditions
IF = 12.5 A, VGS = 0 V
Note 1
1
1.2
V
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
6,259,123B1
IXYS MOSFETs and IGBTs are covered by one or more
6,404,065B1 6,162,665
相关型号：
IXKH13N60C5
Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
IXYS
IXKH13N60C5
Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
LITTELFUSE
IXKH24N60C5
Power Field-Effect Transistor, 24A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
IXYS
IXKH35N60C5
Power Field-Effect Transistor, 35A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
IXYS
IXKK94N60C3
Power Field-Effect Transistor, 94A I(D), 600V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
IXYS
©2020 ICPDF网 联系我们和版权申明