IXKH13N60C5 [LITTELFUSE]
Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN;
| 型号： | IXKH13N60C5 |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN 局域网 开关 晶体管 |
| 文件： | 总4页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXKH 13N60C5
IXKP 13N60C5
COOLMOS® * Power MOSFET
ID25
VDSS
= 13 A
= 600 V
RDS(on) max = 0.3 W
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Ultra low gate charge
D
TO-247 AD (IXKH)
G
G
D
S
D(TAB)
S
TO-220 AB (IXKP)
G
D
S
Features
MOSFET
• fast COOLMOS® * power MOSFET
Symbol
VDSS
Conditions
Maximum Ratings
600
4th generation
TVJ = 25°C
V
- High blocking capability
- Lowest resistance
±
VGS
20
V
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
• Enhanced total power density
ID25
ID90
TC = 25°C
TC = 90°C
ꢀ3
9
A
A
EAS
EAR
single pulse
repetitive
290
0.44
mJ
mJ
ID = 4.4 A; TC = 25°C
dV/dt
MOSFET dV/dt ruggedness VDS = 0...480 V
50 V/ns
Applications
• Switched mode power supplies
(SMPS)
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
min. typ. max.
RDSon
VGS = ꢀ0 V; ID = 6.6 A
270
3
300
mW
• Inductive heating
• PDP and LCD adapter
VGS(th)
IDSS
VDS = VGS; ID = 0.44 mA
VDS = 600 V; VGS = 0 V
2.5
3.5
ꢀ
V
TVJ = 25°C
TVJ = ꢀ25°C
µA
µA
tbd
*COOLMOS® is a trademark of
Infineon Technologies AG.
±
IGSS
VGS
=
20 V; VDS = 0 V
ꢀ00
30
nA
Ciss
Coss
VGS = 0 V; VDS = ꢀ00 V
f = ꢀ MHz
ꢀꢀ00
60
pF
pF
Qg
Qgs
Qgd
20
5
7.6
nC
nC
nC
VGS = 0 to ꢀ0 V; VDS = 400 V; ID = 6.6 A
td(on)
tr
td(off)
tf
tbd
tbd
tbd
tbd
ns
ns
ns
ns
VGS = ꢀ0 V; VDS = 400 V
ID = 6.6 A; RG = 4.3 Ω
RthJC
0.95 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
200803ꢀ0a
ꢀ - 4
IXKH 13N60C5
IXKP 13N60C5
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
6.6
ꢀ.2
A
VSD
IF = 6.6 A; VGS = 0 V
0.9
V
trr
QRM
IRM
300
3.9
26
ns
µC
A
IF = 6.6 A; -diF/dt = ꢀ00 A/µs; VR = 400 V
Component
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
operating
-55...+ꢀ50
-55...+ꢀ50
°C
°C
Md
mounting torque
TO-247
TO-220
0.8 ... ꢀ.2
0.4 ... 0.6
Nm
Nm
Symbol
Conditions
Characteristic Values
min. typ. max.
RthCH
with heatsink compound TO-247
TO-220
0.25
0.50
K/W
K/W
Weight
TO-247
TO-220
6
2
g
g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
200803ꢀ0a
2 - 4
IXKH 13N60C5
IXKP 13N60C5
TO-247 AD Outline
Symbol
Inches
min
Millimeters
max
0.209
0.102
0.098
0.845
0.640
0.216
min
max
A
0.185
0.087
0.059
0.819
0.610
0.170
4.70
2.21
5.30
2.59
A1
A2
D
E
E2
e
1.50
2.49
20.79
15.48
4.31
21.45
16.24
5.48
0.215 BSC
5.46 BSC
L
0.780
-
0.140
0.212
0.800
0.177
0.144
0.244
19.80
-
3.55
5.38
20.30
4.49
3.65
6.19
L1
ØP
Q
S
0.242 BSC
6.14 BSC
b
0.039
0.065
0.102
0.015
0.515
0.020
0.530
-
0.055
0.094
0.135
0.035
-
0.053
-
0.291
0.99
1.65
2.59
0.38
13.07
0.51
13.45
-
1.40
2.39
3.43
0.89
-
1.35
-
7.39
b2
b4
c
D1
D2
E1
ØP1
TO-220 AB Outline
Dim. Millimeter
Min. Max.
Inches
Min. Max.
M
A
B
12.70 13.97
14.73 16.00
0.500 0.550
0.580 0.630
C
N
C
D
9.91 10.66
3.54 4.08
0.390 0.420
0.139 0.161
E
F
5.85 6.85
2.54 3.18
0.230 0.270
0.100 0.125
G
H
1.15 1.65
2.79 5.84
0.045 0.065
0.110 0.230
G
J
K
0.64 1.01
2.54 BSC
0.025 0.040
0.100 BSC
Q
R
J
M
N
4.32 4.82
1.14 1.39
0.170 0.190
0.045 0.055
K
L
Q
R
0.35 0.56
2.29 2.79
0.014 0.022
0.090 0.110
140
120
100
80
45
30
15
0
25
20
15
10
5
ꢀ0V
TJ = 25˚C
TJ = 150˚C
ꢀ 2V
20 V
=
VGS
20 V
6 V
ꢀ 2V
ꢀ0 V
8 V
VGS
=8 V
5.5 V
6 V
60
5 V
5.5 V
5 V
40
4.5 V
20
4.5 V
0
0
0
40
80
120
160
0
5
10
15
20
0
5
10
[V]
15
20
TC [°C]
V
[V]
DS
V
DS
Fig. ꢀ Power dissipation
Fig. 2 Typ. output characteristics
Fig. 3 Typ. output characteristics
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
200803ꢀ0a
3 - 4
IXKH 13N60C5
IXKP 13N60C5
Fig. 4 Typ. drain-source on-state
resistance characteristics of IGBT
Fig. 5 Drain-source on-state resistance
Fig. 6 Typ. transfer characteristics
Fig. 7 Forward characteristic
of reverse diode
Fig. 8 Typ. gate charge
Fig. 9 Typ. capacitances
Fig. ꢀ0 Avalanche energy
Fig. ꢀꢀ Drain-source breakdown voltage
Fig. ꢀ2 Max. transient thermal
impedance
IXYS reserves the right to change limits, test conditions and dimensions.
200803ꢀ0a
© 2008 IXYS All rights reserved
4 - 4
相关型号：
IXKH24N60C5
Power Field-Effect Transistor, 24A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
IXYS
IXKH35N60C5
Power Field-Effect Transistor, 35A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
IXYS
IXKK94N60C3
Power Field-Effect Transistor, 94A I(D), 600V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
IXYS
IXKK94N60C3
Power Field-Effect Transistor, 94A I(D), 600V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
LITTELFUSE
©2020 ICPDF网 联系我们和版权申明