IXKN75N60C [IXYS]
CoolMOS Power MOSFET; 的CoolMOS功率MOSFET
| 型号： | IXKN75N60C |
| 厂家： | 
IXYS CORPORATION |
| 描述： | CoolMOS Power MOSFET |
| 文件： | 总3页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDSS
ID25
RDS(on)
CoolMOS Power MOSFET
600 V 75 A 35 mΩ
IXKN 75N60C
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Preliminary
miniBLOC, SOT-227 B
E72873
MOSFET
Symbol
VDSS
Conditions
Maximum Ratings
S
TVJ = 25°C to 150°C
600
±20
V
V
G
VGS
ID25
ID90
TC = 25°C
TC = 90°C
75
50
A
A
S
D
D = Drain
dv/dt
VDS < VDSS; IF ≤ 100A; diF/dt ≤ 200A/µs
TVJ = 150°C
6
V/ns
G = Gate
S = Source
EAS
EAR
ID = 10 A; L = 36 mH; TC = 25°C
ID = 20 A; L = 5 µH; TC = 25°C
1.8
1
J
mJ
Either source terminal at miniBLOC can be used
as main or kelvin source
Features
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
●
miniBLOC package
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation due to AlN
ceramic substrate
min.
typ. max.
RDSon
VGSth
IDSS
VGS = 10 V;ID = ID90
30
35 mΩ
5.5 V
VDS = 20 V;ID = 5 mA;
3.5
- International standard package SOT-227
- Easy screw assembly
VDS = VDSS;VGS = 0 V; TVJ = 25°C
TVJ = 125°C
0.05 mA
mA
0.1
fast CoolMOS power MOSFET - 2nd generation
●
- High blocking capability
- Low on resistance
IGSS
VGS = ±20 V; VDS = 0 V
200 nA
Qg
Qgs
Qgd
440
112
246
nC
nC
nC
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
VGS= 10 V; VDS = 350 V; ID = 100 A
td(on)
tr
td(off)
tf
30
95
100
10
ns
ns
ns
ns
●
Enhanced total power density
VGS= 10 V; VDS = 380 V;
ID = 50 A; RG = 1 Ω
Applications
●
Switched mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding
●
VF
(reverse conduction) IF = 37.5 A;VGS = 0 V
0.9
1.1
V
●
●
RthJC
0.22 K/W
●
Inductive heating
CoolMOS is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
1 - 3
IXKN 75N60C
Component
miniBLOC, SOT-227 B
Symbol
VISOL
Conditions
ISOL ≤ 1 mA; 50/60 Hz
Maximum Ratings
I
2500
V~
TVJ
Tstg
-40...+150
-40...+125
°C
°C
Md
mounting torque
terminal connection torque (M4)
1.5
1.5
Nm
Nm
Symbol
Conditions
Characteristic Values
min.
typ. max.
RthCH
with heatsink compound
0.1
30
K/W
g
M4 screws (4x) supplied
Weight
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
37.80
30.30
38.20
1.186
1.489
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
V
W
3.30
0.780
4.57
0.830
0.130
19.81
0.180
21.08
© 2001 IXYS All rights reserved
2 - 3
IXKN 75N60C
250
A
0.16
Ω
VGS = 18 - 12 V
10 V
VGS = 8 V
200
0.12
TVJ = 25°C
ID
TVJ = 25°C
RDSon
150
100
50
8 V
0.08
0.04
0.00
10 V
12-18 V
0
A
250
0
4
8
12
16
V
20
0
50
100
150
200
ID
Fig. 2: typ. RDSon vs. Drain Current
VDS
Fig. 1: typ. Output Characteristics
0.10
250
A
TVJ = 25°C
Ω
0.08
RDSon
200
150
100
50
ID
TVJ = 125°C
0.06
0.04
0.02
0.00
ID = 50 A
0
-40
0
40
80
TVJ
120
160
0
2
4
6
8
10 V 12
°C
VGS
Fig. 3: typ. RDSon vs. Junction Temperature
Fig. 4: typ. Input Admittance
16
1
V
K/W
0.1
12
10
8
VGS
ZthJC
0.01
single pulse
6
4
0.001
2
IXKN75N60C
0
0.0001
nC
0.00001 0.0001 0.001 0.01
0.1
1
10
s
0
100 200 300 400 500 700
t
QG
Fig. 5: typ. Gate Charge Characteristic Curve
Fig. 6: typ. Transient Thermal Impedance
© 2001 IXYS All rights reserved
3 - 3
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