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IXSH30N60B2D1 [IXYS]

High Speed IGBT with Diode; 高速IGBT与二极管

IXSH30N60B2D1


元器件型号：	IXSH30N60B2D1
生产厂家：	IXYS CORPORATION
描述和应用：	High Speed IGBT with Diode 高速IGBT与二极管晶体二极管晶体管功率控制双极性晶体管局域网
PDF文件：	总6页 (文件大小：522K)
下载文档：	下载PDF数据表文档文件
型号参数：IXSH30N60B2D1参数

IXSH30N60BD1

High Speed IGBT with Diode

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34 IXYS

IXSH30N60C

High Speed IGBT

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30 IXYS

IXSH30N60C

High Speed IGBT

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11 IXYS

IXSH30N60CD1

Short Circuit SOA Capability

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28 IXYS

IXSH30N60U1

Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability

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25 IXYS

IXSH35N100

TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 35A I(C) | TO-247AD

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31 ETC

IXSH35N100

Insulated Gate Bipolar Transistor, 35A I(C), 1000V V(BR)CES, N-Channel

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0 IXYS

IXSH35N100A

High speed IGBT

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28 IXYS

IXSH35N120A

High Voltage, High speed IGBT

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55 IXYS

IXSH35N120AU1

Insulated Gate Bipolar Transistor, 70A I(C), N-Channel, TO-247AD,

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0 IXYS

IXSH35N120B

IGBT

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29 IXYS

IXSH35N120B

IGBT

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27 IXYS

IXSH35N135A

TRANSISTOR | IGBT | N-CHAN | 1.35KV V(BR)CES | 70A I(C) | TO-247AD

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20 ETC

IXSH35N140A

High Voltage, High speed IGBT - Short Circuit SOA Capability

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67 IXYS

IXSH40N60

Low VCE(sat) IGBT, High Speed IGBT

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29 IXYS

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