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IXSN35N120AU1 [IXYS]

High Voltage IGBT with Diode; 高电压IGBT与二极管
IXSN35N120AU1
型号： IXSN35N120AU1
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

High Voltage IGBT with Diode
高电压IGBT与二极管

二极管 双极性晶体管
文件： 总4页 (文件大小：102K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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High Voltage  
IGBT with Diode  
IXSN 35N120AU1 VCES  
= 1200 V  
= 70 A  
IC25  
VCE(sat) = 4 V  
3
2
4
1
Symbol  
TestConditions  
MaximumRatings  
miniBLOC, SOT-227 B  
1
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
A
2
TJ = 25°C to 150°C; RGE = 1 MW  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
4
IC25  
IC90  
ICM  
TC = 25°C  
70  
35  
A
A
A
3
TC = 90°C  
1 = Emitter ,  
2 = Gate,  
3 = Collector  
4 = Emitter   
TC = 25°C, 1 ms  
140  
 Either Emitter terminal can be used as  
Main or Kelvin Emitter  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 22 W  
Clamped inductive load, L = 30 mH  
ICM = 70  
@ 0.8 VCES  
A
Features  
tSC  
(SCSOA)  
VGE= 15 V, VCE = 0.6 • VCES, TJ = 125°C  
RG = 22 W, non repetitive  
10  
ms  
●
●
Internationalstandardpackage  
miniBLOC(ISOTOP)compatible  
Aluminium-nitrideisolation  
- highpowerdissipation  
Isolation voltage 3000 V~  
Low VCE(sat)  
PC  
PD  
TC = 25°C  
IGBT  
Diode  
300  
175  
W
W
●
●
VISOL  
50/60 Hz  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
- forminimumon-stateconduction  
losses  
Fast RecoveryEpitaxial Diode  
- short trr and IRM  
Low collector-to-case capacitance  
(< 50 pF)  
- reducesd RFI  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
●
●
TJM  
Tstg  
-55 ... +150  
Md  
Mountingtorque  
Terminalconnectiontorque(M4)  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
●
Low package inductance (< 10 nH)  
- easy to drive and to protect  
Weight  
Symbol  
30  
g
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
●
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptiblepowersupplies(UPS)  
●
BVCES  
VGE(th)  
IC = 5 mA, VGE = 0 V  
IC = 4 mA, VCE = VGE  
1200  
4
V
V
●
●
8
●
Switch-modeandresonant-mode  
ICES  

VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
750 mA  
15 mA  
powersupplies  
Advantages  
IGES  
VCE(sat)  
VCE = 0 V, VGE = ±20 V  
±100 nA  
●
Space savings  
Easy to mount with 2 screws  
●
IC = IC90, VGE = 15 V  
4
V
●
High power density  
‚ Device must be heat sunk during high temperature leackage test to avoid thermal runaway.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
92519E (12/96)  
1 - 4  
IXSN35N120AU1  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
miniBLOC, SOT-227 B  
gfs  
IC = IC90; VCE = 10 V,  
20  
26  
S
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
IC(on)  
VCE = 10 V, VGE = 15 V  
170  
A
Cies  
Coes  
Cres  
3900  
295  
60  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
M4 screws (4x) supplied  
Dim.  
Millimeter  
Min. Max.  
31.50 31.88 1.240 1.255  
Inches  
Min.  
Qg  
150  
40  
190 nC  
60 nC  
Max.  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
A
B
7.80  
8.20 0.307 0.323  
70  
100 nC  
C
D
4.09  
4.09  
4.29 0.161 0.169  
4.29 0.161 0.169  
Inductive load, TJ = 25°C  
E
F
4.09  
4.29 0.161 0.169  
td(on)  
tri  
td(off)  
tfi  
80  
150  
400  
500  
10  
ns  
ns  
14.91 15.11 0.587 0.595  
IC = IC90, VGE = 15 V,  
G
H
30.12 30.30 1.186 1.193  
38.00 38.23 1.496 1.505  
VCE = 0.8 • VCES, RG = 2.7 W  
900 ns  
700 ns  
mJ  
J
K
11.68 12.22 0.460 0.481  
8.92  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
9.60 0.351 0.378  
L
M
0.76  
0.84 0.030 0.033  
12.60 12.85 0.496 0.506  
25.15 25.42 0.990 1.001  
1.98  
Eoff  
N
O
2.13 0.078 0.084  
td(on)  
tri  
td(off)  
tfi  
80  
150  
400  
700  
6
ns  
ns  
P
Q
4.95  
5.97 0.195 0.235  
Inductive load, TJ = 125°C  
26.54 26.90 1.045 1.059  
R
S
3.94  
4.72  
4.42 0.155 0.174  
4.85 0.186 0.191  
IC = IC90, VGE = 15 V,  
VCE = 0.8 • VCES, RG = 2.7 W  
ns  
T
U
24.59 25.07 0.968 0.987  
-0.05 0.1 -0.002 0.004  
ns  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
Eon  
Eoff  
mJ  
mJ  
15  
RthJC  
RthCK  
0.42 K/W  
K/W  
0.05  
Reverse Diode (FRED)  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = IC90, VGE = 0 V,  
2.35  
35  
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
IRM  
trr  
IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms  
VR = 540 V  
32  
225  
40  
A
ns  
TJ = 100°C  
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C  
60 ns  
RthJC  
0.71 K/W  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 4  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXSN35N120AU1  
Fig. 1 Saturation Characteristics  
Fig. 2 Output Characterstics  
70  
60  
50  
40  
30  
20  
10  
0
250  
200  
150  
100  
50  
13V  
VGE =15V  
TJ = 25°C  
VGE = 15V  
TJ = 25°C  
11V  
13V  
11V  
9V  
9V  
7V  
7V  
0
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20  
VCE - Volts  
VCE - Volts  
Fig. 3 Collector-Emitter Voltage  
vs. Gate-Emitter Voltage  
Fig. 4 Temperature Dependence  
of Output Saturation Voltage  
10  
9
8
7
6
5
4
3
2
1
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
TJ = 25°C  
VGE=15V  
IC = 70A  
IC = 70A  
IC = 35A  
IC = 17.5A  
IC = 35A  
IC =1 7.5A  
8
9
10  
11  
12  
13  
14  
15  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VGE - Volts  
Fig. 5 Input Admittance  
Fig. 6 Temperature Dependence of  
Breakdown and Threshold Voltage  
50  
40  
30  
20  
10  
0
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VCE = 10V  
VGE(th)  
IC = 4mA  
BVCES  
TJ = 125°C  
IC = 3mA  
TJ = 25°C  
TJ = - 40C  
4
5
6
7
8
9
10 11 12 13 14 15  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VGE - Volts  
© 2000 IXYS All rights reserved  
3 - 4  
IXSN35N120AU1  
Fig.7 Turn-Off Energy per Pulse and  
Fall Time on Collector Current  
Fig.8 Dependence of Turn-Off Energy  
Per Pulse and Fall Time on RG  
1250  
1000  
750  
25  
20  
15  
10  
5
1250  
1000  
750  
18  
TJ = 125°C  
TJ = 125°C  
RG = 10  
I
C = 35A  
17  
16  
15  
14  
tfi  
tfi  
500  
500  
Eoff  
Eoff  
250  
250  
0
10  
20  
30  
40  
50  
60  
70  
0
10  
20  
30  
40  
50  
IC - Amperes  
RG - Ohms  
Fig.9 Gate Charge Characteristic Curve  
Fig.10 Turn-Off Safe Operating Area  
15  
12  
9
100  
10  
IC = 35A  
VCE = 500V  
TJ = 125°C  
RG = 2.7  
dV/dt < 5V/ns  
1
6
0.1  
0.01  
3
0
0
50  
100  
150  
200  
0
200  
400  
600  
800 1000 1200  
QG - nanocoulombs  
VCE - Volts  
Fig.11 Transient Thermal Impedance  
1
0.1  
D=0.5  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
D = Duty Cycle  
0.01  
0.001  
Single Pulse  
0.00001  
0.0001  
0.001  
0.01  
Pulse Width - Seconds  
0.1  
1
10  
© 2000 IXYS All rights reserved  
4 - 4  

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