IXSN50N60BD2 [IXYS]
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, SOT-227B, 4 PIN;
| 型号： | IXSN50N60BD2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, SOT-227B, 4 PIN 局域网 电动机控制 栅 开关 晶体管 |
| 文件： | 总5页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXSN 50N60BD2
IXSN 50N60BD3
VCES = 600 V
IC25 = 75 A
VCEsat) = 2.5 V
HIGH Speed IGBT
with HiPerFRED
Short Circuit SOA Capability
Buck & boost configurations
tfi
= 150 ns
Preliminary data
...BD2
...BD3
SOT-227B, miniBLOC
E153432
Symbol TestConditions
MaximumRatings
1
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
2
TJ = 25°C to 150°C; RGE = 1 MW
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
4
IC25
TC = 25°C
75
50
A
A
A
A
3
IC90
TC = 90°C
IXSN50N60BD2
1 = Emitter; 2 = Gate
3 = Collector; 4 = Diode cathode
ICM
TC = 25°C, 1 ms
200
SSOA
VGE= 15 V, TVJ = 125°C, RG = 22 W
ICM = 100
(RBSOA) Clamped inductive load, L = 30 mH
tSC VGE = 15 V, VCE = 360 V, TJ = 125°C
(SCSOA) RG = 22 W, non repetitive
@ 0.8 VCES
IXSN50N60BD3
1 = Emitter/Diode Cathode; 2 = Gate
3 = Collector; 4 = Diode anode
10
ms
PC
TC = 25°C
250
600
W
V
VRRM
IFAVM
IFRM
PD
Features
TC = 70°C; rectangular, d = 50%
tP z<10 ms; pulse width limited by TJ
TC = 25°C
60
A
600
A
• Internationalstandardpackage
miniBLOC
150
W
°C
°C
°C
• Aluminiumnitrideisolation
- highpowerdissipation
• Isolation voltage 3000 V~
• Very high current, fast switching
IGBT & FRED diode
TJ
-40 ... +150
150
TJM
Tstg
Md
-40 ... +150
Mountingtorque
Terminalconnectiontorque(M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
• MOS Gate turn-on
- drive simplicity
Weight
30
g
• Low collector-to-case capacitance
• Low package inductance (< 10 nH)
- easy to drive and to protect
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Symbol
TestConditions
CharacteristicValues
Applications
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• AC motor speed control
• DC servo and robot drives
• DC choppers
BVCES
VGE(th)
IC = 3 mA, VGE = 0 V
IC = 4 mA, VCE = VGE
600
4
V
V
8
• Buck converters
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
350 mA
mA
Advantages
5
• Easy to mount with 2 screws
• Space savings
• High power density
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
2.5
VCE(sat)
IC = IC90, VGE = 15 V
2.2
V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98675(4/18/2000)
1 - 5
IXSN 50N60BD2
IXSN 50N60BD3
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
miniBLOC, SOT-227 B
IC = IC90; VCE = 10 V,
16
27
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
3850
440
50
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
167
45
nC
nC
nC
M4 screws (4x) supplied
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim.
Millimeter
Min. Max.
31.50 31.88 1.240 1.255
Inches
Min.
88
Max.
A
B
Inductive load, TJ = 25°C
7.80
8.20 0.307 0.323
td(on)
tri
td(off)
tfi
70
70
ns
ns
C
D
4.09
4.09
4.29 0.161 0.169
4.29 0.161 0.169
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 2.7 W
E
F
4.09
4.29 0.161 0.169
150
150
3.3
300 ns
300 ns
6.0 mJ
14.91 15.11 0.587 0.595
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
G
H
30.12 30.30 1.186 1.193
38.00 38.23 1.496 1.505
J
11.68 12.22 0.460 0.481
Eoff
K
8.92
9.60 0.351 0.378
L
M
0.76
0.84 0.030 0.033
td(on)
tri
70
70
ns
ns
12.60 12.85 0.496 0.506
25.15 25.42 0.990 1.001
1.98
Inductive load, TJ = 125°C
N
O
IC = IC90, VGE = 15 V, L = 100 mH
2.13 0.078 0.084
P
Q
4.95
5.97 0.195 0.235
Eon
td(off)
tfi
2.5
230
230
4.8
mJ
ns
VCE = 0.8 VCES, RG = Roff = 2.7 W
26.54 26.90 1.045 1.059
R
S
3.94
4.72
4.42 0.155 0.174
4.85 0.186 0.191
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
ns
T
U
24.59 25.07 0.968 0.987
-0.05 0.1 -0.002 0.004
Eoff
mJ
RthJC
RthCK
0.50 K/W
K/W
0.05
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions
typ. max.
IR
TVJ = 25°C VR= VRRM
TVJ = 150°C
650 uA
2.5 mA
VF
IF = 60 A
1.75
2.40
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IRM
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms
VR = 540 V, TJ = 100°C
8.0
A
trr
IF = 1 A, -di/dt = 50 A/ms, VR = 30 V
35
ns
RthJC
0.85 K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 5
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXSN 50N60BD2
IXSN 50N60BD3
160
120
80
100
80
60
40
20
0
TJ = 25°C
V
GE = 15V
TJ = 25°C
13V
11V
VGE = 15V
13V
11V
9V
40
9V
7V
0
0
4
8
12
16
20
0
2
4
6
8
10
VCE - Volts
VCE - Volts
Figure 1. Saturation Voltage Characteristics
Figure 2. Extended Output Characteristics
1.6
100
V
GE = 15V
13V
IC = 100A
TJ = 125°C
1.4
80
60
40
20
0
VGE = 15V
1.2
1.0
11V
I
C = 50A
0.8
0.6
0.4
IC = 25A
9V
7V
25
50
75
100
125
150
0
2
4
6
8
10
VCE - Volts
TJ - Degrees C
Figure 3. Saturation Voltage Characteristics
Figure 4. Temperature Dependence of VCE(sat)
10000
100
f = 1Mhz
V
CE = 10V
C
iss
80
60
40
20
0
1000
C
oss
100
TJ = 125°C
C
rss
TJ = 25°C
10
0
5
10 15 20 25 30 35 40
4
6
8
10
VGE - Volts
12
14
16
VCE-Volts
Figure 5. Admittance Curves
Figure 6. Capacitance Curves
© 2000 IXYS All rights reserved
3 - 5
IXSN 50N60BD2
IXSN 50N60BD3
24
20
16
12
8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
3
2
1
0
20
TJ = 125°C
RG = 10
E(ON)
TJ = 125°C
E(OFF)
15
IC = 100A
E(ON)
E(OFF)
10
5
E(OFF)
IC = 50A
IC =25A
E(ON)
E(OFF)
4
E(ON)
0
60
0
100
0
10
20
30
40
50
0
20
40
60
80
RG - Ohms
IC - Amperes
Figure 7. Dependence of EON and EOFF on IC.
Figure 8. Dependence of EON and EOFF on RG.
600
20
I
C =50A
VCE = 250V
100
16
12
8
TJ = 125°C
10
RG = 6.2
dV/dt < 5V/ns
1
4
0.1
0
0
100
200
300
400
500
600
0
25
50
75 100 125 150 175
VCE - Volts
Qg - nanocoulombs
Figure 9. Gate Charge
Figure 10. Turn-off Safe Operating Area
1
D=0.5
0.1
D=0.2
D=0.1
D=0.05
D=0.02
D = Duty Cycle
0.01
D=0.01
Single pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Figure 11. Transient Thermal Resistance
© 2000 IXYS All rights reserved
4 - 5
IXSN 50N60BD2
IXSN 50N60BD3
60
A
1000
nC
30
A
TVJ=100°C
VR = 300V
TVJ=100°C
VR = 300V
50
40
30
20
10
0
25
800
IF= 60A
IF= 30A
IF= 15A
IRM
IF= 60A
IF= 30A
Qr
IF
20
15
10
5
600
400
200
0
TVJ=150°C
TVJ=100°C
TVJ=25°C
0
A/ s
-diF/dt
0
1
2
3 V
VF
100
1000
0
200 400 600 1000
A/ s
-diF/dt
Fig. 14 Peak reverse current IRM
versus -diF/dt
Fig. 12 Forward current IF versus VF
2.0
Fig. 13 Reverse recovery charge Qr
versus -diF/dt
90
20
1.00
TVJ=100°C
TVJ=100°C
VR = 300V
IF = 30A
V
VFR
15
µs
ns
tfr
VFR
trr
1.5
Kf
0.75
0.50
0.25
0
tfr
80
IF= 60A
IF= 30A
IF= 15A
1.0
10
5
IRM
70
60
0.5
Qr
0.0
0
A/ s
0
40
80
120
160
0
200 400 600 1000
A/ s
0
200 400 600 1000
°C
diF/dt
TVJ
-diF/dt
Fig. 17 Peak forward voltage VFR and tfr
versus diF/dt
Fig. 15 Dynamic parameters Qr, IRM
versus TVJ
Fig. 16 Recovery time trr versus -diF/dt
1
Constants for ZthJC calculation:
K/W
i
Rthi (K/W)
ti (s)
1
2
3
0.465
0.179
0.256
0.0052
0.0003
0.0396
0.1
ZthJC
0.01
DSEC 60-06B
0.001
0.00001
s
0.0001
0.001
0.01
0.1
1
t
© 2000 IXYS All rights reserved
5 - 5
相关型号：
IXSN50N60BD3
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, SOT-227B, 4 PIN
IXYS
©2020 ICPDF网 联系我们和版权申明