首页 |元器件品牌

IXSN52N60AU1 [IXYS]

IGBT with Diode Combi Pack - Short Circuit SOA Capability; IGBT与二极管Combi机包 - 短路SOA能力
IXSN52N60AU1
型号： IXSN52N60AU1
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

IGBT with Diode Combi Pack - Short Circuit SOA Capability
IGBT与二极管Combi机包 - 短路SOA能力

二极管 双极性晶体管
文件： 总5页 (文件大小：150K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
IGBT with Diode  
IXSN 52N60AU1 VCES  
= 600 V  
= 80 A  
IC25  
CombiPack  
VCE(sat) = 3 V  
3
Short Circuit SOA Capability  
2
4
1
Symbol  
TestConditions  
MaximumRatings  
miniBLOC, SOT-227 B  
1
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
A
2
TJ = 25°C to 150°C; RGE = 1 MW  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
4
IC25  
IC90  
ICM  
TC = 25°C  
80  
40  
A
A
A
3
TC = 90°C  
1 = Emitter ,  
3 = Collector  
4 = Emitter   
TC = 25°C, 1 ms  
160  
2 = Gate,  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 22 W  
Clamped inductive load, L = 30 mH  
ICM = 80  
@ 0.8 VCES  
A
 Either Emitter terminal can be used as  
Main or Kelvin Emitter  
Features  
• Internationalstandardpackage  
miniBLOC  
• Aluminium-nitrideisolation  
- highpowerdissipation  
• Isolation voltage 3000 V~  
• Low VCE(sat)  
- forminimumon-stateconduction  
losses  
tSC  
(SCSOA)  
VGE= 15 V, VCE = 360 V, TJ = 125°C  
RG = 22 W, non repetitive  
10  
ms  
W
PC  
TC = 25°C  
250  
VISOL  
50/60 Hz  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
• Fast RecoveryEpitaxial Diode  
- short trr and IRM  
-55 ... +150  
• Low collector-to-case capacitance  
(< 50 pF)  
Md  
Mountingtorque  
Terminalconnectiontorque(M4)  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
- reducesd RFI  
• Low package inductance (< 10 nH)  
- easy to drive and to protect  
Weight  
30  
g
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
• Uninterruptiblepowersupplies(UPS)  
• Switch-modeandresonant-mode  
powersupplies  
BVCES  
VGE(th)  
IC = 3 mA, VGE = 0 V  
IC = 4 mA, VCE = VGE  
600  
4
V
V
8
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
750 mA  
15 mA  
Advantages  
• Space savings  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
• Easy to mount with 2 screws  
• High power density  
VCE(sat)  
IC = IC90, VGE = 15 V  
3
V
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
92814H(5/97)  
1 - 5  
IXSN52N60AU1  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
miniBLOC, SOT-227 B  
IC = IC90; VCE = 10 V,  
20  
23  
S
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
Cies  
Coes  
Cres  
4500  
400  
90  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
190  
45  
250 nC  
60 nC  
M4 screws (4x) supplied  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Dim.  
Millimeter  
Min. Max.  
31.50 31.88 1.240 1.255  
Inches  
Min.  
Max.  
88  
120 nC  
A
B
7.80  
8.20 0.307 0.323  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
70  
220  
200  
200  
3.5  
ns  
ns  
C
D
4.09  
4.09  
4.29 0.161 0.169  
4.29 0.161 0.169  
IC = IC90, VGE = 15 V, L = 100 mH,  
VCE = 0.8 VCES, RG = 2.7 W  
E
F
4.09  
4.29 0.161 0.169  
14.91 15.11 0.587 0.595  
ns  
G
H
30.12 30.30 1.186 1.193  
38.00 38.23 1.496 1.505  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
ns  
J
11.68 12.22 0.460 0.481  
K
8.92  
9.60 0.351 0.378  
Eoff  
mJ  
L
0.76  
0.84 0.030 0.033  
M
12.60 12.85 0.496 0.506  
25.15 25.42 0.990 1.001  
td(on)  
tri  
70  
220  
4.7  
450  
340  
6
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V, L = 100 mH  
VCE = 0.8 VCES, RG = 2.7 W  
N
O
1.98  
2.13 0.078 0.084  
P
Q
4.95  
5.97 0.195 0.235  
26.54 26.90 1.045 1.059  
Eon  
td(off)  
tfi  
mJ  
R
S
3.94  
4.72  
4.42 0.155 0.174  
4.85 0.186 0.191  
ns  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
T
U
24.59 25.07 0.968 0.987  
-0.05 0.1 -0.002 0.004  
600 ns  
mJ  
Eoff  
RthJC  
RthCK  
0.50 K/W  
K/W  
0.05  
Reverse Diode (FRED)  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = IC90, VGE = 0 V,  
1.8  
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
IRM  
trr  
IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms  
VR = 360 V  
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C  
19  
175  
35  
A
ns  
50 ns  
TJ = 125°C  
RthJC  
0.80 K/W  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 5  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXSN52N60AU1  
Fig.1 Saturation Characteristics  
Fig.2 Output Characterstics  
80  
70  
60  
50  
40  
30  
20  
10  
0
200  
180  
160  
140  
120  
100  
80  
13V  
TJ = 25°C  
VGE = 15V  
TJ = 25°C  
VGE = 15V  
11V  
13V  
11V  
7V  
60  
9V  
7V  
40  
9V  
20  
0
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20  
VCE - Volts  
VCE - Volts  
Fig.3 Collector-Emitter Voltage  
vs. Gate-Emitter Voltage  
Fig.4 Temperature Dependence  
of Output Saturation Voltage  
10  
9
8
7
6
5
4
3
2
1
0
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
TJ = 25°C  
VGE=15V  
IC = 80A  
IC = 80A  
IC = 40A  
IC = 20A  
IC = 40A  
I
C = 20A  
8
9
10  
11  
12  
13  
14  
15  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VGE - Volts  
Fig.5 Input Admittance  
Fig.6 Temperature Dependence of  
Breakdown and Threshold Voltage  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VCE = 10V  
BVCES  
IC = 3mA  
TJ = 25°C  
TJ = 125°C  
VGE8th)  
TJ = - 40°C  
IC = 4mA  
4
5
6
7
8
9
10 11 12 13  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VGE - Volts  
© 2000 IXYS All rights reserved  
3 - 5  
IXSN52N60AU1  
Fig.7 Turn-Off Energy per Pulse and  
Fall Time on Collector Current  
Fig.8 Dependence of Turn-Off Energy  
Per Pulse and Fall Time on RG  
1000  
750  
500  
250  
0
12  
9
1000  
800  
600  
400  
200  
0
10  
TJ = 125°C  
C = 52A  
TJ = 125°C  
I
Eoff  
RG = 10  
8
6
4
2
0
Eoff  
6
tfi  
tfi  
3
0
0
10 20 30 40 50 60 70 80  
0
10  
20  
30  
40  
50  
IC - Amperes  
RG - Ohms  
Fig.9 Gate Charge Characteristic Curve  
Fig.10 Turn-Off Safe Operating Area  
15  
12  
9
1000  
100  
10  
I
C = 52A  
V
CE = 480V  
TJ = 125°C  
RG = 2.7  
dV/dt < 6V/ns  
6
1
3
0.1  
0.01  
0
0
100 200 300 400 500 600 700  
VCE - Volts  
0
50  
100  
150  
200  
250  
Qg - nCoulombs  
Fig.11 Transient Thermal Impedance  
1
0.1  
Diode  
IGBT  
Single Pulse  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
Time - Seconds  
0.1  
1
10  
© 2000 IXYS All rights reserved  
4 - 5  
IXSN52N60AU1  
Fig. 12 Forward current  
versus voltage drop.  
Fig. 13 Recovery charge versus -diF/dt.  
Fig. 14 Peak reverse current versus  
-diF/dt.  
Fig. 15. Dynamic parameters versus  
junctiontemperature.  
Fig. 16 Recovery time versus -diF/dt.  
Fig. 17 Peak forward voltage vs. diF/dt.  
Fig. 18 Transient thermal impedance junction to case.  
© 2000 IXYS All rights reserved  
5 - 5  

相关型号：

IXSN55N100U1

 TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 61A I(C) | SOT-227B
ETC

IXSN55N120

 High Voltage IGBT
IXYS

IXSN55N120A

 High Voltage IGBT - Short Circuit SOA Capability
IXYS

IXSN55N120AU1

 High Voltage IGBT with Diode - Short Circuit SOA Capability
IXYS

IXSN55N120U1

 TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 83A I(C) | SOT-227B
ETC

IXSN62N60AU1

 TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 90A I(C) | SOT-227B
ETC

IXSN62N60U1

 IGBT with Diode - Short Circuit SOA Capability
IXYS

IXSN80N60A

 High Current IGBT - Short Circuit SOA Capability
IXYS

IXSN80N60AU1

 IGBT with Diode - Short Circuit SOA Capability
IXYS

IXSN80N60B

 Insulated Gate Bipolar Transistor, 100A I(C), N-Channel, MINIBLOC-4
IXYS

IXSN80N60BD1

 IGBT with Diode Short Circuit SOA Capability
IXYS

IXSP10N60B2D1

 High Speed IGBT with Diode
IXYS
©2020 ICPDF网 联系我们和版权申明