IXSP10N60B2D1 [IXYS]

High Speed IGBT with Diode; 高速IGBT与二极管
IXSP10N60B2D1
型号: IXSP10N60B2D1
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

High Speed IGBT with Diode
高速IGBT与二极管

二极管 双极性晶体管
文件: 总6页 (文件大小:589K)
下载:  下载PDF数据表文档文件

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S Series - Improved SCSOA Capability

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32 IXYS

IXSP16N60

Low V CE(sat) IGBT - Short Circuit SOA Capability

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14 IXYS

IXSP20N60B2

Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN

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0 IXYS

IXSP20N60B2D1

Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263, 3 PIN

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IXSP24N60B

Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

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0 IXYS

IXSP2N100

TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 3A I(C) | TO-220AB

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6 ETC

IXSP2N100A

TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 3A I(C) | TO-220AB

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19 ETC

IXSR35N120BD1

IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)

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15 IXYS

IXSR35N120BD1

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

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0 IXYS

IXSR40N60BD1

IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)

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28 IXYS

IXSR40N60CD1

IGBT with Diode ISOPLUS247

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IXSR45N120B

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IXSR50N60BD1

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0 IXYS

IXSR50N60BU1

Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

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IXST15N120B

Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, D3PAK-3

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0 IXYS