IXTA06N120P [IXYS]
Power Field-Effect Transistor, 0.6A I(D), 1200V, 34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN;
| 型号： | IXTA06N120P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 0.6A I(D), 1200V, 34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Polar VHVTM
Power MOSFET
IXTA06N120P
IXTP06N120P
VDSS = 1200V
ID25
=
0.6A
RDS(on)
≤
32Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
Symbol
VDSS
Test Conditions
Maximum Ratings
G
S
TJ = 25°C to 150°C
1200
1200
V
V
(TAB)
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
TO-220 (IXTP)
ID25
IDM
TC = 25°C
0.6
1.2
A
A
TC = 25°C, pulse width limited by TJM
IA
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
0.6
5
50
A
mJ
mJ
(TAB)
G
D
S
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
10
42
V/ns
W
G = Gate
S = Source
D = Drain
TAB = Drain
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6mm (0.062) from case for 10s
Plastic body for 10s
300
260
°C
°C
Features
TSOLD
z International standard packages
z Unclamped Inductive Switching
(UIS) rated
z Low package inductance
- easy to drive and to protect
Md
Mounting torque
(TO-220)
1.13 / 10
Nm/lb.in.
Weight
TO-263
TO-220
2.5
3.0
g
g
Advantages
z
Easy to mount
Space savings
High power density
z
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 50μA
VGS = ±20V, VDS = 0V
1200
V
V
2.5
4.5
Applications:
±50 nA
μA
z Switched-mode and resonant-mode
power supplies
IDSS
VDS = VDSS
VGS = 0V
3
z DC-DC Converters
z Laser Drivers
TJ = 125°C
125 μA
z AC and DC motor controls
z Robotics and servo controls
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
27
32 Ω
DS99872(08/07)
© 2007 IXYS CORPORATION, All rights reserved
IXTA06N120P
IXTP06N120P
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
TO-220 (IXTP) Outline
(TJ = 25°C, unless otherwise specified)
gfs
VDS= 30V, ID = 0.5 • ID25, Note 1
0.28
0.45
S
Ciss
Coss
Crss
270
19
3.2
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 50Ω (External)
20
ns
24
50
27
ns
ns
ns
Qg(on)
Qgs
Qgd
13.3
2.4
7.8
nC
nC
nC
Pins: 1 - Gate
2 - Drain
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
3.0 °C/W
°C/W
(TO-220)
0.5
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0V
0.6 A
ISM
VSD
trr
Repetitive
1.8 A
1.5 V
ns
IF = IS, VGS = 0V, Note 1
IF = 0.6A, -di/dt = 100A/μs,
VR = 100V, VGS = 0V
900
TO-263 (IXTA) Outline
Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
IXTA06N120P
IXTP06N120P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Output Characteristics
@ 125ºC
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.6
0.5
0.4
0.3
0.2
0.1
0
VGS = 10V
VGS = 10V
8V
7V
7V
6V
6V
5V
5V
0
5
10
15
20
25
30
35
150
150
0
5
10
15
20
25
30
35
40
45
0.9
5.5
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 0.3A Value
vs. Drain Current
Fig. 3. RDS(on) Normalized to ID = 0.3A Value
vs. Junction Temperature
2.8
2.6
2.4
2.2
2
2.4
2.2
2
VGS = 10V
VGS = 10V
TJ = 125ºC
1.8
1.6
1.4
1.2
1
1.8
1.6
1.4
1.2
1
I D = 0.6A
I D = 0.3A
TJ = 25ºC
0.8
0.6
0.4
0.8
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
-50
-25
0
25
50
75
100
125
ID - Amperes
TJ - Degrees Centigrade
Fig. 5. Maximum Drain Current vs.
Case Temperature
Fig. 6. Input Admittance
0.5
0.4
0.3
0.2
0.1
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
TJ = 125ºC
25ºC
-40ºC
-50
-25
0
25
50
75
100
125
3
3.5
4
4.5
5
VGS - Volts
TC - Degrees Centigrade
© 2007 IXYS CORPORATION, All rights reserved
IXTA06N120P
IXTP06N120P
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
Fig. 7. Transconductance
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.8
1.6
1.4
1.2
1
TJ = - 40ºC
TJ = 25ºC
TJ = 125ºC
0.8
0.6
0.4
0.2
0
TJ = 125ºC
TJ = 25ºC
0
0.1
0.2
0.3
0.4
0.5
0.6
0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9
VSD - Volts
ID - Amperes
Fig. 9. Gate Charge
Fig. 10. Capacitance
10
9
8
7
6
5
4
3
2
1
0
1,000
100
10
f = 1 MHz
VDS = 600V
I D = 0.3A
I G = 1mA
C
iss
C
C
oss
rss
1
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
35
40
QG - NanoCoulombs
VDS - Volts
Fig. 11. Maximum Transient Thermal Impedance
10.0
1.0
0.1
0.1
1
10
100
1000
Pulse Width - Second
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: T_06N120P (1A) 11-08-06-A
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