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IXTA1R4N100P [IXYS]

N-Channel Enhancement Mode Avalanche Rated; N沟道增强模式额定雪崩
IXTA1R4N100P
型号： IXTA1R4N100P
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

N-Channel Enhancement Mode Avalanche Rated
N沟道增强模式额定雪崩
文件： 总4页 (文件大小：157K)
中文：  中文翻译
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PolarTM  
Power MOSFETs  
VDSS = 1000V  
ID25 = 1.4A  
RDS(on) ≤ 11.8Ω  
IXTY1R4N100P  
IXTA1R4N100P  
IXTP1R4N100P  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-252 (IXTY)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1000  
1000  
V
V
D (Tab)  
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
TO-263 AA (IXTA)  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
1.4  
3.0  
A
A
D (Tab)  
IA  
EAS  
TC = 25°C  
TC = 25°C  
1.4  
100  
A
mJ  
TO-220AB (IXTP)  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
63  
V/ns  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
D
D (Tab)  
= Drain  
S
G = Gate  
S = Source  
D
TL  
TSOLD  
1.6mm (0.062) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Tab = Drain  
FC  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65/2.2..14.6  
1.13 / 10  
N/lb.  
Features  
Md  
Nm/lb.in.  
Weight  
TO-252  
TO-263  
TO-220  
0.35  
2.50  
3.00  
g
g
g
z
International Standard Packages  
Low RDS(on) and QG  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
z
z
z
z
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
z
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1000  
2.5  
Typ.  
Max.  
z
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 50μA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
4.5  
±50 nA  
μA  
150 μA  
11.8  
V
Applications  
z
IDSS  
5
Switch-Mode and Resonant-Mode  
TJ = 125°C  
Power Supplies  
DC-DC Converters  
Laser Drivers  
AC and DC Motor Drives  
z
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
Ω
z
z
z
Robotics and Servo Controls  
DS99737B(08/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXTY1R4N100P IXTA1R4N100P  
IXTP1R4N100P  
Symbol  
Test Conditions  
Characteristic Values  
TO-220 (IXTP) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS= 20V, ID = 0.5 • ID25, Note 1  
0.70  
1.10  
S
Ciss  
Coss  
Crss  
450  
27  
6
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 30Ω (External)  
td(on)  
tr  
td(off)  
tf  
25  
35  
65  
28  
ns  
ns  
ns  
ns  
Qg(on)  
Qgs  
Qgd  
17.8  
2.8  
9.9  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
RthJC  
RthCS  
2.0 °C/W  
°C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
1.4 A  
4.2 A  
1.5 V  
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
IF = 1.4A, -di/dt = 100A/μs,  
VR = 100V, VGS = 0V  
750  
ns  
TO-252 (IXTY) Outline  
Note  
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
TO-263 (IXTA) Outline  
Pins: 1 - Gate  
3 - Source  
2,4 - Drain  
Dim. Millimeter  
Min. Max.  
Inches  
Min.  
Max.  
A
A1  
2.19 2.38  
0.89 1.14  
0.086  
0.035  
0.094  
0.045  
A2  
b
0
0.13  
0
0.005  
0.035  
0.64 0.89  
0.025  
b1  
b2  
0.76 1.14  
5.21 5.46  
0.030  
0.205  
0.045  
0.215  
c
c1  
0.46 0.58  
0.46 0.58  
0.018  
0.018  
0.023  
0.023  
D
D1  
5.97 6.22  
4.32 5.21  
0.235  
0.170  
0.245  
0.205  
E
E1  
6.35 6.73  
4.32 5.21  
0.250  
0.170  
0.265  
0.205  
e
e1  
2.28 BSC  
4.57 BSC  
0.090 BSC  
0.180 BSC  
H
L
9.40 10.42  
0.51 1.02  
0.370  
0.020  
0.410  
0.040  
L1  
L2  
L3  
0.64 1.02  
0.89 1.27  
2.54 2.92  
0.025  
0.035  
0.100  
0.040  
0.050  
0.115  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXTY1R4N100P IXTA1R4N100P  
IXTP1R4N100P  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
2.2  
2
1.4  
1.2  
1
VGS = 10V  
7V  
VGS = 10V  
7V  
1.8  
1.6  
1.4  
1.2  
1
6V  
0.8  
0.6  
0.4  
0.2  
0
6V  
5V  
0.8  
0.6  
0.4  
0.2  
0
5V  
0
5
10  
15  
20  
25  
30  
150  
150  
0
0
0
2
4
6
8
10  
12  
14  
16  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 0.7A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
1.4  
1.2  
1
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
7V  
VGS = 10V  
6V  
5V  
I D = 1.4A  
0.8  
0.6  
0.4  
0.2  
0
I D = 0.7A  
5
10  
15  
20  
25  
30  
35  
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 0.7A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
1.6  
1.4  
1.2  
1
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
TJ = 125ºC  
VGS = 10V  
0.8  
0.6  
0.4  
0.2  
0
TJ = 25ºC  
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
2.2  
-50  
-25  
0
25  
50  
75  
100  
125  
TC - Degrees Centigrade  
ID - Amperes  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXTY1R4N100P IXTA1R4N100P  
IXTP1R4N100P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
2
1.8  
1.6  
1.4  
1.2  
1
2.4  
2
TJ = - 40ºC  
25ºC  
1.6  
1.2  
0.8  
0.4  
0
TJ = 125ºC  
125ºC  
25ºC  
- 40ºC  
0.8  
0.6  
0.4  
0.2  
0
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
ID - Amperes  
2
2.2 2.4 2.6  
3.0  
0.4  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
0.95  
40  
VGS - Volts  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
5
4.5  
4
10  
9
8
7
6
5
4
3
2
1
0
VDS = 500V  
D = 0.7A  
I G = 10mA  
I
3.5  
3
2.5  
2
TJ = 125ºC  
TJ = 25ºC  
1.5  
1
0.5  
0
0.45  
0.5  
0.55  
0.6  
0.65  
0.7  
0.75  
0.8  
0.85  
0.9  
0
2
4
6
8
10  
12  
14  
16  
18  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
1,000  
100  
10  
10  
C
iss  
1
C
oss  
rss  
0.1  
0.01  
C
= 1 MHz  
5
f
1
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_1R4N100P (2A)4-03-08-A  

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