IXTA64N10L2 [IXYS]
N-Channel Power MOSFET;
| 型号： | IXTA64N10L2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | N-Channel Power MOSFET |
| 文件： | 总7页 (文件大小：351K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
LinearL2TM
Power MOSFET
w/Extended FBSOA
VDSS = 100V
ID25 = 64A
RDS(on) 32m
IXTA64N10L2
IXTP64N10L2
IXTH64N10L2
N-Channel Enhancement Mode
Guaranteed FBSOA
TO-263
(IXTA)
Avalanche Rated
G
S
D (Tab)
TO-220
(IXTP)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
100
100
V
V
G
VDGR
D
S
VGSS
VGSM
Continuous
Transient
20
30
V
V
D (Tab)
TO-247
(IXTH)
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
64
A
A
140
IA
EAS
TC = 25C
TC = 25C
32
2
A
J
G
D
D (Tab)
S
PD
TC = 25C
357
W
TJ
-55 to +150
+150
C
C
C
G = Gate
D
= Drain
TJM
Tstg
S = Source
Tab = Drain
-55 to +150
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
Features
Designed for Linear Operation
International Standard Packages
Avalanche Rated
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
Guaranteed FBSOA at 75C
Advantages
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
100
2.5
Typ.
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
Solid State Circuit Breakers
Soft Start Controls
4.5
Linear Amplifiers
100 nA
A
Programmable Loads
Current Regulators
IDSS
5
TJ = 125C
VGS = 10V, ID = 0.5 • ID25, Note 1
25 A
32 m
RDS(on)
© 2018 IXYS CORPORATION, All Rights Reserved
DS100557A(11/18)
IXTA64N10L2 IXTP64N10L2
IXTH64N10L2
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
21
27
33
S
Ciss
Coss
Crss
3620
720
pF
pF
pF
235
RGi
Integrated Gate Input Resistor
1.2
td(on)
tr
td(off)
tf
14
27
38
11
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 0 (External)
Qg(on)
Qgs
100
16
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
45
RthJC
RthCS
0.35 C/W
TO-220
TO-247
0.50
0.21
C/W
C/W
Safe Operating Area Specification
Characteristic Values
Symbol
SOA
Test Conditions
Min.
Typ.
Max.
VDS = 100V, ID = 2.15A, TC = 75°C, Tp = 5s
215
W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
64
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
256
1.4
trr
IRM
QRM
180
16.2
1.46
ns
A
μC
IF = 32A, -di/dt = 100A/s,
VR = 50V, VGS = 0V
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTA64N10L2 IXTP64N10L2
IXTH64N10L2
Fig. 1. Output Characteristics @ TJ = 25oC
Fig. 2. Extended Output Characteristics @ TJ = 25oC
180
160
140
120
100
80
13V
11V
10V
V
= 20V
GS
V
= 20V
GS
60
50
40
30
20
10
0
15V
12V
10V
9V
8V
7V
9V
8V
6V
5V
60
7V
6V
40
20
0
0
0
0
0.5
1
1.5
2
2.5
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 32A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125oC
V
= 20V
GS
60
50
40
30
20
10
0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
13V
10V
9V
V
= 10V
GS
8V
7V
I
= 64A
D
I
= 32A
D
6V
5V
1
2
3
4
5
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 32A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs. Case Temperature
70
60
50
40
30
20
10
0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
= 10V
GS
T = 125oC
J
T = 25oC
J
20
40
60
80
100
120
140
160
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
© 2018 IXYS CORPORATION, All Rights Reserved
IXTA64N10L2 IXTP64N10L2
IXTH64N10L2
Fig. 7. Input Admittance
Fig. 8. Transconductance
100
90
80
70
60
50
40
30
20
10
0
45
40
35
30
25
20
15
10
5
T
= - 40oC
J
25oC
125oC
T
J
= 125oC
25oC
- 40oC
0
0
10
20
30
40
50
60
70
80
90
100
3.0
0.4
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
1.4
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
240
200
160
120
80
10
9
8
7
6
5
4
3
2
1
0
V
= 50V
DS
I
I
= 32A
D
G
= 10mA
T
J
= 125oC
T
= 25oC
J
40
0
0
10
20
30
40
50
60
70
80
90
100
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Capacitance
10,000
1,000
100
1
f
= 1 MHz
C
iss
0.1
C
oss
0.01
0.001
C
rss
5
10
15
20
25
30
35
0.00001
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA64N10L2 IXTP64N10L2
IXTH64N10L2
Fig. 13. Forward-Bias Safe Operating Area
@ TC = 25oC
Fig. 14. Forward-Bias Safe Operating Area
@ TC = 75oC
1000
100
10
1000
100
10
R
DS(on)
Limit
R
DS(on)
Limit
25μs
25μs
100μs
100μs
1ms
1ms
10ms
100ms
TJ = 150oC
C = 25oC
Single Pulse
10ms
TJ = 150oC
C = 75oC
Single Pulse
DC
T
100ms
T
DC
1
1
1
10
100
1
10
100
VDS - Volts
VDS - Volts
© 2018 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_64N10L2(6R) 8-16-13
IXTA64N10L2 IXTP64N10L2
IXTH64N10L2
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
TO-247 Outline
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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