IXTH200N075T [IXYS]
Preliminary Technical Information Trench Gate Power MOSFET; 初步的技术资料沟槽栅功率MOSFET
| 型号： | IXTH200N075T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Preliminary Technical Information Trench Gate Power MOSFET |
| 文件： | 总5页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
IXTH200N075T
IXTQ200N075T
VDSS = 75
ID25 = 200
RDS(on) ≤ 5.0 mΩ
V
A
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-247 (IXTH)
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
75
75
V
V
VGSM
Transient
± 20
V
ID25
ILRMS
IDM
TC = 25°C
200
75
540
A
A
A
Lead Current Limit, RMS
G
(TAB)
D
TC = 25°C, pulse width limited by TJM
S
IAR
EAS
TC = 25°C
TC = 25°C
25
750
A
mJ
TO-3P (IXTQ)
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 175°C, RG = 5 Ω
3
V/ns
TC = 25°C
430
W
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
°C
°C
°C
G
D
(TAB)
S
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
°C
°C
G = Gate
D = Drain
S = Source
TAB = Drain
Md
Mounting torque
1.13 / 10 Nm/lb.in.
Weight
TO-3P
TO-247
5.5
6
g
g
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
Advantages
z
Easy to mount
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VGS = ± 20 V, VDS = 0 V
75
V
V
z
Space savings
z
2.0
4.0
High power density
± 200
nA
IDSS
VDS = VDSS
VGS = 0 V
5
μA
μA
TJ = 150°C
250
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
4.0
5.0 mΩ
DS99634 (11/06)
© 2006 IXYS CORPORATION All rights reserved
IXTH200N075T
IXTQ200N075T
Symbol
Test Conditions
Characteristic Values
TO-247 AD Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 60 A, Note 1
70
110
S
Ciss
Coss
Crss
6800
1040
190
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
1
2
3
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A
RG = 5 Ω (External)
31
57
54
52
ns
ns
ns
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Qg(on)
Qgs
160
35
nC
nC
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Qgd
43
RthJC
RthCH
0.35°C/W
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
TO-3P
TO-247
0.25
0.21
°C/W
°C/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Source-Drain Diode
.780 .800
.177
Symbol
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
IS
VGS = 0 V
200
A
A
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
ISM
VSD
trr
Pulse width limited by TJM
IF = 25 A, VGS = 0 V, Note 1
540
1.0
V
TO-3P (IXTQ) Outline
IF = 25 A, -di/dt = 100 A/μs
50
ns
VR = 40 V, VGS = 0 V
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478B2
7,005,734B2
7,063,975B2
7,071,537
IXTH200N075T
IXTQ200N075T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
200
180
160
140
120
100
80
350
300
250
200
150
100
50
V
= 10V
GS
V
= 10V
GS
9V
8V
7V
9V
8V
7V
6V
6V
5V
60
40
20
5V
0
0
0
1
2
3
4
5
6
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 100A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
200
180
160
140
120
100
80
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10V
GS
V
= 10V
GS
9V
8V
7V
I
= 200A
D
6V
5V
I
= 100A
D
60
40
20
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 100A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
2.6
2.4
2.2
2
140
120
100
80
External Lead Current Limit for TO-263 (7-Lead)
T = 175ºC
J
V
= 10V
GS
1.8
1.6
1.4
1.2
1
15V - - - -
External Lead Current Limit for TO-3P, TO-220, & TO-263
60
40
T = 25ºC
J
20
0
0.8
-50
-25
0
25
50
75
100
125
150
175
50
100
150
200
250
300
350
ID - Amperes
TC - Degrees Centigrade
© 2006 IXYS CORPORATION All rights reserved
IXTH200N075T
IXTQ200N075T
Fig. 8. Transconductance
Fig. 7. Input Admittance
160
140
120
100
80
300
270
240
210
180
150
120
90
T
J
= - 40ºC
T
J
= -40ºC
25ºC
150ºC
25ºC
150ºC
60
40
60
20
30
0
0
0
50
100
150
200
250
300
350
3
3.5
4
4.5
5
5.5
6
6.5
7
1.4
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
350
300
250
200
150
100
50
V
= 38V
DS
I
I
= 25A
D
G
= 10mA
T
J
= 150ºC
T
J
= 25ºC
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
0
20
40
60
80
100
120
140
160
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1,000
100
1.00
0.10
0.01
C
iss
C
C
oss
f = 1 MHz
rss
0
5
10
15
20
25
30
35
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH200N075T
IXTQ200N075T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
65
60
55
50
45
40
35
30
25
20
70
65
60
55
50
45
40
35
30
25
20
R
V
V
= 5
Ω
G
= 10V
GS
T
= 25ºC
= 38V
J
DS
R
V
V
= 5
Ω
G
= 10V
= 38V
GS
DS
I
= 50A
D
T
J
= 125ºC
I
= 25A
D
25
35
45
55
65
75
85
95
105 115 125
25
30
35
40
45
50
TJ - Degrees Centigrade
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
130
120
110
100
90
60
57
54
51
48
45
42
39
36
33
30
27
58
95
90
85
80
75
70
65
60
55
50
45
t r
td(on)
- - - -
57
56
55
54
53
52
51
50
49
48
TJ = 125ºC, V
= 10V
GS
I
= 25A
D
V
= 38V
DS
80
I
= 50A
D
70
I
= 50A
D
60
50
t f
R
td(off)
- - - -
I
= 25A
D
40
= 5 , V
= 10V
GS
Ω
G
30
V
= 38V
DS
20
4
6
8
10
12
14
16
18
20
25
35
45
55
65
75
85
95 105 115 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
58
57
56
55
54
53
52
51
50
49
48
95
90
85
80
75
70
65
60
55
50
45
170
150
130
110
90
300
260
220
180
140
100
60
t f
td(off)
- - - -
T
= 125ºC, VGS = 10V
J
VDS = 38V
TJ = 125ºC
t f
td(off) - - - -
I
= 25A
D
R
= 5 , VGS = 10V
Ω
G
VDS = 38V
I
= 50A
D
T
J
= 25ºC
70
50
25
30
35
40
45
50
4
6
8
10
12
14
16
18
20
RG - Ohms
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
IXYS REF: T_200N075T (5V) 6-20-06.xls
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