IXTH40N50L2 [IXYS]
Power Field-Effect Transistor, 40A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3;
| 型号： | IXTH40N50L2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 40A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 局域网 放大器 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LinearL2TM
Power MOSFET
w/Extended FBSOA
VDSS = 500V
ID25 = 40A
RDS(on) 170m
IXTT40N50L2
IXTQ40N50L2
IXTH40N50L2
N-Channel Enhancement Mode
Avalanche rated
TO-268 (IXTT)
G
S
D (Tab)
TO-3P (IXTQ)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
500
500
V
V
G
D
VDGR
S
VGSS
VGSM
Continuous
Transient
20
30
V
V
D (Tab)
TO-247 (IXTH)
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
40
80
A
A
IA
TC = 25C
TC = 25C
40
2
A
J
EAS
G
D
PD
TC = 25C
540
W
S
D (Tab)
D = Drain
TJ
-55 to +150
+150
C
C
C
TJM
Tstg
G = Gate
S = Source
-55 to +150
Tab = Drain
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Md
Mounting Torque (TO-247&TO-3P)
1.13/10
Nm/lb.in
Weight
TO-268
TO-3P
TO-247
4.0
5.5
6.0
g
g
g
Features
Designed for Linear Operation
International Standard Packages
Avalanche Rated
Molding Epoxies Meet UL 94 V-0
Flammability Classification
Guaranteed FBSOA at 75C
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
500
2.5
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 250A
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
Applications
4.5
Solid State Circuit Breakers
Soft Start Controls
100 nA
IDSS
50 A
300 A
Linear Amplifiers
TJ = 125C
VGS = 10V, ID = 0.5 • ID25, Note 1
Programmable Loads
Current Regulators
RDS(on)
170 m
© 2017 IXYS CORPORATION, All rights reserved
DS100100B(6/17)
IXTT40N50L2 IXTQ40N50L2
IXTH40N50L2
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
11
15
19
S
Ciss
Coss
Crss
10.4
655
155
nF
pF
pF
td(on)
tr
td(off)
tf
50
133
127
44
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 (External)
Qg(on)
Qgs
320
64
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
198
RthJC
RthCS
0.23 C/W
C/W
(TO-247&TO-3P)
0.25
Safe Operating Area Specification
Symbol
SOA
Test Conditions
Min.
Typ.
Max.
VDS = 400V, ID = 0.8A, TC = 75°C, tp = 3s
320
W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
40
A
A
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
IF = IS, -di/dt = 100A/μs, VR = 100V
160
1.5
V
500
ns
Note 1: Pulse test, t 300s, duty cycle, d 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTT40N50L2 IXTQ40N50L2
IXTH40N50L2
Fig. 1. Output Characteristics @ TJ = 25oC
Fig. 2. Extended Output Characteristics @ TJ = 25oC
40
35
30
25
20
15
10
5
100
80
60
40
20
0
V
= 20V
GS
V
= 20V
GS
12V
10V
12V
10V
9V
8V
9V
7V
8V
7V
6V
5V
6V
5V
0
0
0
0
1
2
3
4
5
6
7
8
16
90
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 20A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125oC
40
35
30
25
20
15
10
5
2.8
2.4
2.0
1.6
1.2
0.8
0.4
V
= 20V
GS
V
= 10V
GS
12V
10V
9V
I
= 40A
D
8V
7V
I
= 20A
D
6V
5V
0
2
4
6
8
10
12
14
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 20A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
45
40
35
30
25
20
15
10
5
V
= 10V
T = 125oC
J
2.8
2.4
2.0
1.6
1.2
0.8
GS
T = 25oC
J
0
10
20
30
40
50
60
70
80
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
© 2017 IXYS CORPORATION, All rights reserved
IXTT40N50L2 IXTQ40N50L2
IXTH40N50L2
Fig. 8. Transconductance
Fig. 7. Input Admittance
36
30
24
18
12
6
70
60
50
40
30
20
10
0
T
= - 40oC
J
25oC
125oC
T
J
= 125oC
25oC
- 40oC
0
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
70
VGS - Volts
ID - Amperes
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
16
14
12
10
8
120
100
80
60
40
20
0
V
= 250V
DS
I
I
= 20A
D
G
= 10mA
6
T
J
= 125oC
4
T
J
= 25oC
2
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
50
100
150
200
250
300
350
400
450
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Capacitance
1
100,000
10,000
1,000
100
f
= 1 MHz
0.1
C
iss
C
oss
0.01
0.001
C
rss
10
0
5
15
20
25
30
35
40
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTT40N50L2 IXTQ40N50L2
IXTH40N50L2
Fig. 14. Forward-Bias Safe Operating Area
Fig. 13. Forward-Bias Safe Operating Area
@ T = 75oC
@ T = 25oC
C
C
100
10
1
100
10
1
R
Limit
R
Limit
DS(on)
DS(on)
25μs
25μs
100μs
100μs
1ms
1ms
10ms
10ms
100ms
100ms
DC
DC
TJ = 150oC
C = 25oC
Single Pulse
TJ = 150oC
TC = 75oC
T
Single Pulse
0.1
0.1
10
100
1000
10
100
1000
VDS - Volts
VDS - Volts
TO-3P Outline
TO-268 Outline
TO-247 Outline
D
A
A
0P
+
B
O 0K M D B M
A
0P
0P1
E
E1
E
A2
A2
A2
Q
S
S
D2
+
+
R
+
+
4
+
D1
D1
D
D
0P1
4
1
2
3
ixys option
C
1
2
3
L1
L1
A1
E1
L
A1
b
b2
c
c
b
b4
b2
Terminals: 1 - Gate
3 - Source
2,4 - Drain
PINS: 1 - Gate
e
b4
+
O
2, 4 - Drain
3 - Source
J
M
C
A M
e
PINS: 1 - Gate
2, 4 - Drain
3 - Source
© 2017 IXYS CORPORATION, All rights reserved
IXYS REF: T_40N50L2(8R)6-16-17-B
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