IXTK110N30 [IXYS]
Power Field-Effect Transistor, 110A I(D), 300V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN;
| 型号： | IXTK110N30 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 110A I(D), 300V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
IXTK 110N30
VDSS = 300 V
High Current
MegaMOSTMFET
ID25
= 110 A
RDS(on) = 26 mΩ
N-Channel Enhancement Mode
Symbol
Testconditions
Maximum ratings
TO-264AA(IXTK)
VDSS
VDGR
TJ = 25°C to 150°C
300
300
V
V
TJ = 25°C to 150°C; RGS = 1.0 MΩ
VGS
Continuous
Transient
±20
±30
V
V
VGSM
D (TAB)
G
ID25
ID(RMS)
IDM
TC = 25°C MOSFET chip capability
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
110
75
440
90
A
D
S
A
A
A
IAR
G = Gate
D
= Drain
S = Source
Tab = Drain
EAR
EAS
TC = 25°C
TC = 25°C
80
4.0
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TJ
TC = 25°C
730
W
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
Features
TL
1.6 mm (0.063 in.) from case for 10 s
Mountingtorque
300
0.7/6
10
°C
Nm/lb.in.
g
•Low RDS (on) HDMOSTM process
•Ruggedpolysilicongatecellstructure
•Internationalstandardpackage
•Fastswitchingtimes
Md
Weight
TO-264
Applications
Symbol Test Conditions
Characteristic Values
•Motorcontrols
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
•DC choppers
•Switched-mode power supplies
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 1 mA
300
V
V
Advantages
VDS = VGS, ID = 250 µA
VGS = ±20 V DC, VDS = 0
2.0
4.0
±200 nA
•Easy to mount with one screw
(isolatedmountingscrewhole)
•Space savings
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
50 µA
3
mA
•High power density
RDS(on)
VGS = 10 V, ID = 0.5 ID25
26 mΩ
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
© 2003 IXYS All rights reserved
DS99013(03/03)
IXTK 110N30
Symbol
Test Conditions
Characteristic values
Min. Typ. Max.
TO-264 AA Outline
(TJ = 25°C unless otherwise specified)
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
85
101
S
Ciss
Coss
Crss
7800
1700
600
pF
pF
pF
td(on)
tr
td(off)
tf
30
40
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 1.0 Ω (External)
110
30
Dim.
Millimeter
Inches
Max.
Min.
Max.
Min.
.190
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.202
.114
.083
Qg(on)
Qgs
390
60
nC
nC
nC
.100
.079
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
Qgd
180
c
D
0.53
25.91
19.81
0.83
26.16
19.96
.021
1.020
.780
.033
1.030
.786
RthJC
RthCK
0.17 K/W
K/W
E
e
5.46BSC
.215BSC
0.15
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
L
L1
20.32
2.29
20.83
2.59
.800
.090
.820
.102
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Source-Drain Diode
Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0V
110
A
A
V
ISM
Repetitive; pulse width limited by TJM
440
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 25A, -di/dt = 100 A/µs, VR = 100V
350
4
ns
Qrr
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTK 110N30
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Output Characteristics
@ 125 Deg. C
12 0
10 0
80
60
40
20
0
15 0
12 5
10 0
75
50
25
0
VGS = 10V
VGS = 10V
9V
9V
8V
7V
6V
8V
7V
6V
5V
5V
0
1.5
3
4.5
6
7.5
9
0
1
2
3
4
5
VDS - Volts
VDS - Volts
Fig. 3. RDS(on) Normalized to ID25 Value vs.
Junction Temperature
3
Fig. 4. RDS(on) Normalized to ID25
Value vs. ID
3
VGS = 10V
VGS = 10V
2.6
2.5
2
TJ = 125ºC
2.2
1. 8
1. 4
ID = 1 1 0 A
1. 5
ID= 55A
1
1
TJ= 25ºC
0.5
0.6
-50 -25
0
25 50 75 100 125 150
0
30
60
90
120 150
180 210
TJ - Degrees Centigrade
ID - Amperes
Fig. 5. Drain Current vs. Case
Temperature
Fig. 6. Input Admittance
12 0
10 0
80
60
40
20
0
17 5
15 0
12 5
10 0
75
50
25
0
TJ = -40ºC
25ºC
125ºC
-50 -25
0
25 50 75 100 125 150
3.5
4
4.5
5
5.5
6
6.5
VGS - Volts
TC - Degrees Centigrade
© 2003 IXYS All rights reserved
IXTK 110N30
Fig. 8. Source Current vs. Source-To-Drain
Voltage
Fig. 7. Transconductance
18 0
16 0
14 0
12 0
10 0
80
200
17 5
15 0
12 5
10 0
75
TJ = -40ºC
25ºC
125ºC
TJ = 125ºC
TJ = 25ºC
60
50
40
25
20
0
0
0
30
60
90
120 150 180 210
0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2
ID - Amperes
VSD - Volts
Fig. 9. Gate Charge
Fig. 10. Capacitance
10
8
10000
10 0 0
10 0
VDS = 150V
ID= 60A
IG= 10mA
C
iss
f = 1MHz
6
C
C
oss
rss
4
2
0
0
5
10
15
20 25
30 35 40
0
80
160
240
320
400
VDS - Volts
QG - nanoCoulombs
Fig. 11. Maximum Transient Thermal
Resistance
1
0.1
0.01
1
10
100
1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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