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IXTP3N50D2 [IXYS]

Depletion Mode MOSFET; 耗尽型MOSFET
IXTP3N50D2
型号： IXTP3N50D2
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Depletion Mode MOSFET
耗尽型MOSFET
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中文：  中文翻译
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Depletion Mode  
MOSFET  
VDSX = 500V  
ID(on) > 3A  
IXTA3N50D2  
IXTP3N50D2  
RDS(on) ≤ 1.5Ω  
N-Channel  
TO-263 AA (IXTA)  
G
S
Symbol  
VDSX  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
500  
V
D (Tab)  
VGSX  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
TO-220AB (IXTP)  
PD  
TC = 25°C  
125  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
G
D
D (Tab)  
= Drain  
S
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
G = Gate  
S = Source  
D
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Tab = Drain  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Features  
• Normally ON Mode  
• International Standard Packages  
• Molding Epoxies Meet UL94V-0  
Flammability Classification  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
• Easy to Mount  
• Space Savings  
• High Power Density  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSX  
VGS(off)  
IGSX  
VGS = - 5V, ID = 250μA  
VDS = 25V, ID = 250μA  
VGS = ±20V, VDS = 0V  
VDS = VDSX, VGS= - 5V  
500  
V
V
- 2.0  
- 4.0  
Applications  
±100 nA  
μA  
50 μA  
IDSX(off)  
5
• Audio Amplifiers  
• Start-up Circuits  
• Protection Circuits  
• Ramp Generators  
• Current Regulators  
• Active Loads  
TJ = 125°C  
RDS(on)  
ID(on)  
VGS = 0V, ID = 1.5A, Note 1  
VGS = 0V, VDS = 25V, Note 1  
1.5  
Ω
3
A
DS100148B(12/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTA3N50D2  
IXTP3N50D2  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 (IXTA) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 30V, ID = 1.5A, Note 1  
1.3  
2.1  
S
Ciss  
Coss  
Crss  
1070  
102  
24  
pF  
pF  
pF  
VGS = -10V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
27  
71  
56  
42  
ns  
ns  
ns  
ns  
Resistive Switching Times  
1. Gate  
2. Drain  
3. Source  
4. Drain  
Bottom  
Side  
V
GS = ± 5V, VDS = 250V, ID = 1.5A  
RG = 3.3Ω (External)  
Qg(on)  
Qgs  
40  
5
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min. Max.  
VGS = 5V, VDS = 250V, ID = 1.5A  
Min.  
Max.  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
Qgd  
20  
RthJC  
RthCS  
1.00 °C/W  
°C/W  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
TO-220  
0.50  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
Safe-Operating-Area Specification  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
Characteristic Values  
Symbol  
SOA  
Test Conditions  
Min.  
Typ.  
Max.  
VDS = 400V, ID = 0.19A, TC = 75°C, Tp = 5s  
75  
W
TO-220 (IXTP) Outline  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VSD  
IF = 3A, VGS = -10V, Note 1  
0.8  
1.3  
V
trr  
IRM  
QRM  
340  
10.9  
1.86  
ns  
A
μC  
IF = 3A, -di/dt = 100A/μs  
VR = 100V, VGS = -10V  
Pins:  
1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXTA3N50D2  
IXTP3N50D2  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
16  
14  
12  
10  
8
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
VGS = 5V  
VGS = 5V  
3V  
3V  
2V  
1V  
2V  
1V  
0V  
0V  
6
-1V  
4
-1V  
-2V  
-2V  
-3V  
2
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics @ TJ = 125ºC  
Fig. 4. Drain Current @ TJ = 25ºC  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.E+00  
1.E-01  
1.E-02  
1.E-03  
1.E-04  
1.E-05  
1.E-06  
VGS = 5V  
VGS = - 2.50V  
2V  
1V  
- 2.75V  
- 3.00V  
0V  
- 3.25V  
- 3.50V  
-1V  
- 3.75V  
- 4.00V  
-2V  
-3V  
0
1
2
3
4
5
6
7
0
100  
200  
300  
400  
500  
600  
VDS - Volts  
VDS - Volts  
Fig. 6. Dynamic Resistance vs. Gate Voltage  
Fig. 5. Drain Current @ TJ = 100ºC  
1.E+08  
1.E+07  
1.E+06  
1.E+05  
1.E+04  
1.E+03  
1.E+00  
1.E-01  
1.E-02  
1.E-03  
1.E-04  
V
DS = 350V - 100V  
∆
VGS = -2.75V  
-3.00V  
-3.25V  
-3.50V  
-3.75V  
TJ = 25ºC  
TJ = 100ºC  
-4.00V  
0
100  
200  
300  
400  
500  
600  
-4.2  
-4.0  
-3.8  
-3.6  
-3.4  
-3.2  
-3.0  
-2.8  
-2.6  
-2.4  
VDS - Volts  
VGS - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXTA3N50D2  
IXTP3N50D2  
Fig. 8. RDS(on) Normalized to ID = 1.5A Value  
Fig. 7. Normalized RDS(on) vs. Junction Temperature  
vs. Drain Current  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 0V  
VGS = 0V  
5V  
I
= 1.5A  
D
- - - -  
TJ = 125ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
9
10  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 9. Input Admittance  
Fig. 10. Transconductance  
10  
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
TJ = - 40ºC  
VDS = 30V  
VDS = 30V  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
-3.5  
-3.0  
-2.5  
-2.0  
-1.5  
-1.0  
-0.5  
0.0  
0.5  
1.0  
0
1
2
3
4
5
6
7
8
9
10  
VGS - Volts  
ID - Amperes  
Fig. 11. Breakdown and Threshold Voltages  
vs. Junction Temperature  
Fig. 12. Forward Voltage Drop of  
Intrinsic Diode  
10  
9
8
7
6
5
4
3
2
1
0
1.4  
VGS = -10V  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
VGS(off) @ VDS = 25V  
TJ = 125ºC  
BVDSX @ VGS = - 5V  
TJ = 25ºC  
0.4  
0.5  
0.6  
VSD - Volts  
0.7  
0.8  
0.9  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA3N50D2  
IXTP3N50D2  
Fig. 13. Capacitance  
Fig. 14. Gate Charge  
5
4
10,000  
1,000  
100  
VDS = 250V  
= 1 MHz  
f
I
I
D = 1.5A  
3
G = 10mA  
C
iss  
2
1
0
C
oss  
-1  
-2  
-3  
-4  
-5  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
QG - NanoCoulombs  
Fig. 16. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
Fig. 15. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
100.0  
10.0  
1.0  
100.0  
10.0  
1.0  
RDS(on) Limit  
RDS(on) Limit  
25µs  
25µs  
100µs  
1ms  
100µs  
1ms  
10ms  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
TJ = 150ºC  
C = 75ºC  
10ms  
100ms  
T
T
DC  
100ms  
Single Pulse  
DC  
0.1  
0.1  
10  
100  
1,000  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 17. Maximum Transient Thermal Impedance  
2.00  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_3N50D2(3C)8-17-09-A  

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