IXTT52N30P [IXYS]
PolarHT Power MOSFET; PolarHT功率MOSFET
| 型号： | IXTT52N30P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHT Power MOSFET |
| 文件： | 总5页 (文件大小：577K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advanced Technical Information
PolarHTTM
Power MOSFET
IXTQ52N30P
IXTT52N30P
VDSS
ID25
= 300 V
= 52 A
RDS(on) = 66 mΩ
N-Channel Enhancement Mode
Symbol
TestConditions
Maximum Ratings
TO-3P(IXTQ)
VDSS
VDGR
T
= 25°C to 150°C
300
300
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ
VGSS
VGSM
Continuous
Transient
20
30
V
V
ID25
IDM
TC = 25°C
52
A
A
G
C
(TAB)
TC = 25°C, pulse width limited by TJM
150
E
IAR
TC = 25°C
52
A
EAR
EAS
TC = 25°C
TC = 25°C
30
mJ
J
TO-268 (IXTT)
1.0
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 4 Ω
,
10
V/ns
G
S
TC = 25°C
400
W
D (TAB)
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G = Gate
S = Source
D = Drain
TAB = Drain
TL
1.6 mm (0.062 in.) from case for 10 s
300
°C
Md
Mounting torque
(TO-3P)
1.13/10 Nm/lb.in.
Features
Weight
TO-3P
5.5
5.0
g
g
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
TO-268
z
z
Symbol
TestConditions
Characteristic Values
Low package inductance
- easy to drive and to protect
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250µA
VGS = 20 VDC, VDS = 0
300
V
V
2.5
5.0
Advantages
100 nA
z
Easy to mount
z
IDSS
VDS = VDSS
VGS = 0 V
25 µA
250 µA
Space savings
z
TJ = 125°C
High power density
RDS(on)
VGS = 10 V, ID = 0.5 ID25
57
66 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
DS99115A(10/04)
© 2004 IXYS All rights reserved
IXTQ 52N30P
IXTT 52N30P
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
TO-3P (IXTQ) Outline
VDS = 10 V; ID = 0.5 ID25, pulse test
20
30
S
Ciss
Coss
Crss
3490
550
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
130
td(on)
tr
td(off)
tf
24
22
60
20
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 4 Ω (External)
Qg(on)
Qgs
110
25
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
53
RthJC
RthCK
0.31
K/W
K/W
(TO-3P)
0.21
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0 V
52
150
1.5
A
ISM
Repetitive
A
V
TO-268 Outline
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
ns
Trr
IF = 25A
-di/dt = 100 A/µs
VR = 100V
250
3.0
QRM
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTQ 52N30P
IXTT 52N30P
Fig. 2. Extended Output Characteristics
@ 25 deg. C
Fig. 1. Output Characteristics
@ 25 Deg. C
150
125
100
75
55
50
45
40
35
30
25
20
15
10
5
VGS = 10V
9V
VGS = 10V
8V
7V
6V
8V
7V
50
6V
5V
25
5V
0
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
5
10
15
20
25
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. RDS(on) Normalized to ID25 Value vs.
Junction Temperature
55
50
45
40
35
30
25
20
15
10
5
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
VGS = 10V
VGS = 10V
8V
7V
ID = 52A
ID = 26A
6V
5V
0.8
0.6
0.4
0
1
2
3
4
5
6
7
8
9
10
-50
-25
0
25
50
75
100 125 150
VD S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID25
Value vs. ID
Fig. 6. Drain Current vs. Case
Temperature
3.8
3.4
3
55
50
45
40
35
30
25
20
15
10
5
VGS = 10V
2.6
2.2
1.8
1.4
1
TJ = 125ºC
TJ = 25ºC
0.6
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
I - Amperes
T- Degrees Centigrade
© 2004 IXYS All rights reserved
IXTQ 52N30P
IXTT 52N30P
Fig. 8. Transconductance
Fig. 7. Input Admittance
100
90
80
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
TJ = -40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
-40ºC
4
4.5
5
5.5
6
6.5
7
7.5
8
0
10 20 30 40 50 60 70 80 90 100
VG S - Volts
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
150
VDS = 150V
ID = 26A
G = 10mA
125
100
75
50
25
0
I
TJ = 125ºC
TJ = 25ºC
0.4
0.6
0.8
1
1.2
1.4
0
20
40
60
80
100
120
Q G - nanoCoulombs
VS D - Volts
Fig. 12. Forw ard-Bias Safe
Operating Area
Fig. 11. Capacitance
10000
1000
f = 1MHz
TC = 25ºC
RDS(on) Limit
C
iss
25µs
100
10
1
1ms
1000
C
C
10ms
oss
rss
DC
100
10
100
VD S - Volts
1000
0
5
10
15
20
25
30
35
40
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 52N30P
IXTT 52N30P
Fig. 13. Maximum Transient Thermal Resistance
1.00
0.10
0.01
1
10
100
1000
Pulse Width - milliseconds
© 2004 IXYS All rights reserved
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