IXTV26N50P [IXYS]
Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220, 3 PIN;型号: | IXTV26N50P |
厂家: | IXYS CORPORATION |
描述: | Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220, 3 PIN 局域网 开关 脉冲 晶体管 |
文件: | 总5页 (文件大小:335K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IXTQ 26N50P
IXTT 26N50P
IXTV 26N50P
IXTV 26N50PS
VDSS
ID25
RDS(on)
=
=
≤
500
26
230 mΩ
V
A
PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
G
D
S
VDSS
VDGR
TJ = 25° C to 150° C
500
500
V
V
D (TAB)
TJ = 25° C to 150° C; RGS = 1 MΩ
TO-268 (IXTT)
VGSS
VGSM
Continuos
Transient
30
40
V
V
ID25
IDM
TC =25° C
26
78
A
A
G
S
TC = 25° C, pulse width limited by TJM
D (TAB)
IAR
TC =25° C
26
A
PLUS220 (IXTV)
EAR
EAS
TC =25° C
TC =25° C
40
mJ
J
1.0
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 4 Ω
,
10
V/ns
G
D
S
D (TAB)
TC =25° C
400
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
PLUS220SMD (IXTV_S)
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
G
S
Md
Mounting torque
(TO-3P)
1.13/10 Nm/lb.in.
D (TAB)
Weight
TO-3P
TO-268
PLUS220 & PLUS220SMD
6
5.5
5
g
g
g
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250µA
VGS = 30 VDC, VDS = 0
500
V
V
3.0
5.5
l
100
nA
IDSS
VDS = VDSS
VGS = 0 V
25
250
µA
µA
Advantages
TJ = 125° C
l
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
230 mΩ
Easy to mount
Space savings
High power density
l
l
DS99206E(12/05)
© 2006 IXYS All rights reserved
IXTQ 26N50P IXTT 26N50P
IXTV 26N50P IXTV26N50PS
Symbol
gfs
Test Conditions
Characteristic Values
TO-3P (IXTQ) Outline
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
24
31
S
Ciss
Coss
Crss
3600
380
48
pF
pF
pF
td(on)
tr
td(off)
tf
20
25
58
20
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 ID25
RG = 4 Ω (External)
Qg(on)
Qgs
65
18
20
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCS
0.31 ° C/W
° C/W
0.21
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
Symbol
IS
Test Conditions
VGS = 0 V
Repetitive
26
104
1.5
A
ISM
A
V
PLUS220 (IXTV) Outline
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 25A, -di/dt = 100 A/µs
300
3.3
ns
QRM
VR = 100V, VGS = 0 V
µC
PLUS220SMD (IXTV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
IXTQ 26N50P IXTT 26N50P
IXTV 26N50P IXTV26N50PS
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
26
24
22
20
18
16
14
12
10
8
60
55
50
45
40
35
30
25
20
15
10
5
V
= 10V
GS
V
= 10V
8V
GS
8V
7V
7V
6V
6V
6
4
2
5V
5V
15
0
0
0
1
2
3
4
5
6
7
0
3
6
9
12
18
21
24
27
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 13A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
26
24
22
20
18
16
14
12
10
8
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
V
= 10V
7V
GS
V
= 10V
GS
6V
I
= 26A
D
I
= 13A
D
6
5V
4
0.7
0.4
2
0
0
2
4
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 13A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
30
25
20
15
10
5
3.2
3
V
= 10V
GS
T
J
= 125ºC
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
T
J
= 25ºC
0.8
0
0
5
10
15
20
25
30
35
40
45
50
55
60
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
ID - Amperes
© 2006 IXYS All rights reserved
IXTQ 26N50P IXTT 26N50P
IXTV 26N50P IXTV26N50PS
Fig. 8. Transconductance
Fig. 7. Input Admittance
50
45
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
T
J
= - 40ºC
25ºC
125ºC
T
J
= 125ºC
25ºC
- 40ºC
0
0
3.5
4
4.5
5
5.5
6
6.5
7
0
5
10
15
20
25
30
35
40
45
50
55
60
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
80
10
9
8
7
6
5
4
3
2
1
0
V
= 250V
DS
70
60
50
40
30
20
10
0
I
I
= 13A
D
G
= 10mA
T
J
= 125ºC
T
J
= 25ºC
0.9
0.4
0.5
0.6
0.7
0.8
1
1.1
0
5
10 15 20 25 30 35 40 45 50 55 60 65
QG - NanoCoulombs
VSD - Volts
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100
10,000
1,000
100
f = 1 MHz
R
Limit
DS(on)
C
C
iss
25µs
100µs
10
1ms
oss
10ms
DC
T
= 150ºC
= 25ºC
J
C
T
C
rss
10
1
0
5
10
15
20
25
30
35
40
10
100
1000
VDS - Volts
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 26N50P IXTT 26N50P
IXTV 26N50P IXTV26N50PS
Fig. 13. Maximum Transient Thermal Resistance
1.000
0.100
0.010
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
TO-268 (IXTT) Outline
© 2006 IXYS All rights reserved
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