IXYH50N65C3H1 [IXYS]
Insulated Gate Bipolar Transistor,;
| 型号： | IXYH50N65C3H1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总8页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM w/ Sonic
Diode
VCES = 650V
IC110 = 50A
VCE(sat) 2.10V
tfi(typ) = 27ns
IXYH50N65C3H1
Extreme Light Punch Through
IGBT for 20-60kHz Switching
TO-247AD
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 175°C
650
650
V
V
TJ = 25°C to 175°C, RGE = 1M
G
VGES
VGEM
Continuous
Transient
±20
±30
V
V
C
Tab
=
E
IC25
IC110
IF110
ICM
TC = 25°C
130
50
40
A
A
A
A
G = Gate
E = Emitter
C
Collector
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
Tab = Collector
250
IA
EAS
TC = 25°C
TC = 25°C
20
A
300
mJ
Features
SSOA
VGE = 15V, TVJ = 150°C, RG = 5
Clamped Inductive Load
ICM = 100
A
μs
W
(RBSOA)
VCE VCES
Optimized for 20-60kHz Switching
Square RBSOA
tsc
VGE = 15V, VCE = 360V, TJ = 150°C
8
Avalanche Rated
(SCSOA)
RG = 82, Non Repetitive
Short Circuit Capability
International Standard Package
PC
TC = 25°C
600
TJ
TJM
Tstg
-55 ... +175
175
°C
°C
°C
Advantages
-55 ... +175
High Power Density
Extremely Rugged
Low Gate Drive Requirement
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Md
Mounting Torque
1.13/10
6
Nm/lb.in
g
Weight
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
650
3.5
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250A, VGE = 0V
IC = 250A, VCE = VGE
VCE = VCES, VGE = 0V
V
V
6.0
50 A
mA
100 nA
High Frequency Power Inverters
TJ = 150C
TJ = 150C
3
IGES
VCE = 0V, VGE = 20V
VCE(sat)
IC = 36A, VGE = 15V, Note 1
1.74
2.00
2.10
V
V
© 2014 IXYS CORPORATION, All Rights Reserved
DS100572B(7/14)
IXYH50N65C3H1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-247 (IXYH) Outline
Min.
Typ.
Max.
gfs
IC = 36A, VCE = 10V, Note 1
19
28
S
Cies
Coes
Cres
2346
230
50
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
80
15
40
nC
nC
nC
IC = 36A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
22
35
ns
ns
1 - Gate
2,4 - Collector
3 - Emitter
Inductive load, TJ = 25°C
IC = 36A, VGE = 15V
1.30
80
mJ
ns
VCE = 400V, RG = 5
27
ns
Note 2
Eof
0.37
mJ
f
td(on)
tri
23
33
ns
ns
Inductive load, TJ = 150°C
IC = 36A, VGE = 15V
Eon
td(off)
tfi
1.70
100
42
mJ
ns
VCE = 400V, RG = 5
ns
Note 2
Eoff
0.56
mJ
RthJC
RthCS
0.25 °C/W
°C/W
0.21
Reverse Sonic Diode (FRD)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min. Typ.
Max.
VF
IF = 30A, VGE = 0V, Note 1
2.5
V
V
TJ = 150°C
2.15
IRM
trr
TJ = 150°C
TJ = 150°C
25
120
A
ns
IF = 30A, VGE = 0V,
-diF/dt = 500A/μs, VR = 300V
RthJC
0.60 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXYH50N65C3H1
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
55
50
45
40
35
30
25
20
15
10
5
280
240
200
160
120
80
V
= 15V
GE
V
= 15V
GE
13V
12V
11V
14V
10V
9V
13V
12V
11V
10V
8V
7V
40
9V
8V
0
0
0
0.5
1
1.5
2
2.5
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
1.8
1.6
1.4
1.2
1.0
0.8
0.6
55
50
45
40
35
30
25
20
15
10
5
V
= 15V
GE
V
= 15V
GE
13V
12V
11V
10V
I
= 54A
C
9V
8V
I
= 36A
C
7V
6V
I
= 18A
100
C
0
-50
-25
0
25
50
75
125
150
175
0
0.5
1
1.5
2
2.5
3
3.5
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
100
90
80
70
60
50
40
30
20
10
0
T
J
= 25ºC
I
= 54A
C
T
= 150ºC
25ºC
J
- 40ºC
36A
18A
4
5
6
7
8
9
10
11
8
9
10
11
12
13
14
15
VGE - Volts
VGE - Volts
© 2014 IXYS CORPORATION, All Rights Reserved
IXYH50N65C3H1
Fig. 7. Transconductance
Fig. 8. Gate Charge
45
40
35
30
25
20
15
10
5
16
14
12
10
8
T
J
= - 40ºC
VCE = 325V
IC = 36A
IG = 10mA
25ºC
150ºC
6
4
2
0
0
0
10
20
30
40
50
60
70
80
90
100
110
0
10
20
30
40
50
60
70
80
IC - Amperes
QG - NanoCoulombs
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
10,000
1,000
100
100
80
C
ies
60
C
oes
res
40
T
J
= 150ºC
20
C
R
G
= 5
Ω
= 1 MHz
5
f
dv / dt < 10V / ns
10
0
0
10
15
20
25
30
35
40
100
200
300
500
600
700
400
VCE - Volts
VCE - Volts
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Forward-Bias Safe Operating Area
a
a s s s
1000
100
10
0.4
0.1
V
Limit
CE(sat)
25µs
100µs
1
1ms
T = 175ºC
J
0.1
0.01
T
C
= 25ºC
10ms
Single Pulse
0.01
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
VDS - Volts
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH50N65C3H1
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.6
3.0
2.4
1.8
1.2
0.6
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
E
R
E
on - - - -
E
E
on - - - -
off
off
= 5
V
= 15V
GE
Ω ,
G
T
J
= 150ºC , V = 15V
GE
V
= 400V
CE
V
= 400V
CE
T
J
= 150ºC
I
= 54A
C
T
J
= 25ºC
I
= 36A
C
18
22
26
30
34
38
42
46
50
54
5
10
15
20
25
30
35
40
45
RG - Ohms
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
80
70
60
50
40
30
20
480
400
320
240
160
80
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
E
E
t f i
t
d(off) - - - -
on - - - -
off
= 5
R
VGE = 15V
Ω ,
T = 150ºC, V = 15V
J GE
G
VCE = 400V
V
= 400V
CE
I
= 54A
C
I
= 36A
C
I
= 54A
C
IC = 36A
0
5
10
15
20
25
30
35
40
45
25
50
75
100
125
150
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
70
60
50
40
30
20
10
120
90
80
70
60
50
40
30
20
10
0
140
130
120
110
100
90
t f i
t
t f i
t
d(off) - - - -
d(off) - - - -
110
100
90
R
G
= 5 , V = 15V
R
G
= 5 , V = 15V
Ω
Ω
GE
GE
V
= 400V
V
= 400V
CE
CE
I
= 36A
C
T
J
= 150ºC
80
80
T
J
= 25ºC
70
I
= 54A
C
70
60
60
50
25
50
75
100
125
150
18
22
26
30
34
38
42
46
50
54
TJ - Degrees Centigrade
IC - Amperes
© 2014 IXYS CORPORATION, All Rights Reserved
IXYH50N65C3H1
Fig. 20. Inductive Turn-on Switching Times vs.
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
Collector Current
td(on)
- - - -
70
60
50
40
30
20
10
0
30
28
26
24
22
20
18
16
140
120
100
80
120
100
80
60
40
20
0
t r i
t r i
t
d(on) - - - -
R
G
= 5 , V = 15V
Ω
GE
T = 150ºC, V = 15V
J
GE
V
= 400V
CE
V
= 400V
CE
T = 150ºC
J
I
= 36A
C
60
T = 25ºC
J
I
= 54A
C
40
20
5
10
15
20
25
30
35
40
45
18
22
26
30
34
38
42
46
50
54
IC - Amperes
RG - Ohms
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
Fig. 22. Maximum Peak Load Current vs. Frequency
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
27
26
25
24
23
22
21
20
19
t r i
t
d(on) - - - -
R
G
= 5 , V = 15V
Ω
GE
V
= 400V
CE
I
= 54A
C
Triangular Wave
T = 150ºC
J
T
C
= 75ºC
I
= 36A
C
V
V
= 400V
= 15V
CE
GE
R
G
= 5ꢀ
Square Wave
Duty Cycle = 50%
25
50
75
100
125
150
10
100
1,000
TJ - Degrees Centigrade
- KiloHertz
fmax
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH50N65C3H1
Fig. 23. Forward Current vs. Forward Voltage
Fig. 24. Reverse Recovery Charge QRR vs. -diF/dt
100
80
60
40
20
0
2.4
2.2
2
T
= 150ºC
= 300V
VJ
I
= 50A
F
V
R
T
VJ
= 25ºC
150ºC
1.8
1.6
1.4
1.2
1
30A
10A
0.8
0
0.5
1
1.5
2
2.5
3
3.5
4
400
600
800
1000
1200
1400
1600
1800
2000
-di /d
VF
t - A/µs
- Volts
F
t
Fig. 26. Recover Time tRR vs. -diF/d
t
Fig. 25. Peak Reverse Current IRM vs. -diF/d
140
120
100
80
70
60
50
40
30
20
10
T
= 150ºC
V = 300V
R
T
= 150ºC
VJ
VJ
I
= 50A
30A
V
= 300V
F
R
10A
I F = 50A
60
30A
10A
40
20
400
600
800
1000
1200
1400
1600
1800
2000
400
600
800
1000
1200
1400
1600
1800
2000
-diF/dt - A/µs
-di /d
t - A/µs
F
Fig. 28. Dynamic Parameters QRR, IRM vs.
Virtual Junction Temperature TVJ
t
Fig. 27. Recovery Energy EREC vs. -diF/d
1.20
1.00
0.80
0.60
0.40
0.20
500
450
400
350
300
250
200
150
100
V
= 300V
R
T
= 150ºC
= 300V
VJ
I
F
= 50A
I
=50A
F
V
R
-dI /dt = 900A/µs
F
30A
10A
K
I
RM
F
K
Q
RR
F
0
20
40
60
80
100
120
140
160
400
600
800
1000
1200
1400
1600
1800
2000
-diF
d
TVJ - Degrees Centigrade
/ t - A/µs
© 2014 IXYS CORPORATION, All Rights Reserved
IXYH50N65C3H1
Fig. 29. Maximum Transient Thermal Impedance (Diode)
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_50N65C3(5D)8-09-13/DMHP19-067F_4-03-14
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