IXZ308N120 [IXYS]
Z-MOS RF Power MOSFET; Z- MOS RF功率MOSFET
| 型号： | IXZ308N120 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Z-MOS RF Power MOSFET |
| 文件： | 总3页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXZ308N120
Z-MOS RF Power MOSFET
N-Channel Enhancement Mode SwitchModeRFMOSFET
LowCapacitanceZ-MOSTMMOSFETProcess
Optimized for RFOperation
Ideal for Class C, D, &EApplications
VDSS
ID25
= 1200 V
=
=
=
8.0 A
2.1 Ω
RDS(on)
PDC
Symbol
Test Conditions
Maximum Rat-
ings
880 W
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
1200
1200
V
V
VDSS
VDGR
±20
±30
8
V
V
VGS
VGSM
ID25
IDM
Transient
Tc = 25°C
A
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
40
A
8
A
IAR
Tc = 25°C
TBD
mJ
EAR
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS
Tj ≤ 150°C, RG = 0.2Ω
,
5 V/ns
dv/dt
IS = 0
>200 V/ns
DRAIN
880
440
3.0
W
W
W
PDC
GATE
Tc = 25°C, Derate 4.4W/°C above 25°C
Tc = 25°C
PDHS
PDAMB
RthJC
RthJHS
0.17 C/W
0.34 C/W
SG1 SG2
SD1
SD2
Features
• Isolated Substrate
−
−
−
high isolation voltage (>2500V)
min.
1200
3.5
typ.
max.
excellent thermal transfer
Increased temperature and power
cycling capability
VGS = 0 V, ID = 4 ma
VDS = VGS, ID = 250µΑ
VGS = ±20 VDC, VDS = 0
V
V
VDSS
VGS(th)
IGSS
• IXYS advanced Z-MOS process
• Low gate charge and capacitances
−
−
•
6.5
±100
nA
easier to drive
faster switching
Low RDS(on)
VDS = 0.8VDSS
VGS=0
TJ = 25C
TJ =125C
50
1
IDSS
µA
mA
• Very low insertion inductance (<2nH)
VGS = 20 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
2.1
RDS(on)
Ω
• No beryllium oxide (BeO) or other
hazardous materials
VDS = 50 V, ID = 0.5ID25, pulse test
10.1
S
°C
°C
°C
°C
g
gfs
Advantages
-55
-55
+175
TJ
• Optimized for RF and high speed
• Easy to mount—no insulators needed
• High power density
175
TJM
Tstg
TL
+ 175
1.6mm(0.063 in) from case for 10 s
300
3.5
Weight
IXZ308N120
Z-MOS RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
max.
1
RG
Ω
pF
pF
1960
59
Ciss
Coss
VGS = 0 V, VDS = 0.8 VDSS(max)
f = 1 MHz
,
9.2
33
4
pF
pF
ns
ns
ns
ns
Crss
Back Metal to any Pin
Cstray
Td(on)
Ton
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
5
RG = 1 Ω (External)
4
Td(off)
Toff
6
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
8
VGS = 0 V
IS
Α
Repetitive; pulse width limited by
TJM
48
A
ISM
IF=Is, VGS=0 V, Pulse test, t ≤
300µs, duty cycle ≤2%
1.5
V
VSD
Trr
TBD
ns
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
5,034,796
5,381,025
6,731,002
4,860,072
5,049,961
5,640,045
4,881,106
5,063,307
6,404,065
4,891,686
5,187,117
6,583,505
4,931,844
5,237,481
6,710,463
5,017,508
5,486,715
6,727,585
IXZ308N120
Z-MOS RF Power MOSFET
10000
Ciss
1000
100
Coss
Crss
10
1
0
200
400
600
800
1000
1200
Vds in Volts
IXZ308N120 Capacitances verses Vds
Doc #dsIXZ308N12 REV 06/04
© 2004 IXYS RF
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: info@ixysrf.com
Web: http://www.ixysrf.com
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