MCC250-14IO1 [IXYS]
Thyristor Modules Thyristor/Diode Modules; 晶闸管模块可控硅/二极管模块
| 型号： | MCC250-14IO1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Thyristor Modules Thyristor/Diode Modules |
| 文件： | 总4页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCC 250
MCD 250
ITRMS = 2x450 A
ITAVM = 2x287 A
VRRM = 800-1800 V
Thyristor Modules
Thyristor/Diode Modules
3
VRSM
VDSM
VRRM
VDRM
Type
7
2
6
5
4
1
V
V
Version 1
Version 1
900
1300
1500
1700
1900
800
1200
1400
1600
1800
MCC 250-08io1
MCC 250-12io1
MCC 250-14io1
MCC 250-16io1
MCC 250-18io1
MCD 250-08io1
MCD 250-12io1
MCD 250-14io1
MCD 250-16io1
MCD 250-18io1
3
3
6 7 1
5 4 2
Symbol
Conditions
Maximum Ratings
ITRMS, IFRMS
TVJ = TVJM
TC = 85°C; 180° sine
450
287
A
A
I
TAVM, IFAVM
MCC
MCD
ITSM, IFSM
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
9000
9600
A
A
1
5 4 2
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
7800
8500
A
A
∫i2dt
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
405 000
380 000
A2s
A2s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
304 000
300 000
A2s
A2s
Features
• International standard package
• Direct copper bonded Al2O3 -ceramic
base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered, E 72873
• Keyed gate/cathode twin pins
(di/dt)cr
TVJ = TVJM
;
repetitive, IT = 860 A
100
A/µs
f = 50 Hz; tP = 200 µs
VD = 2/3 VDRM
IG = 1 A;
diG/dt = 1 A/µs
non repetitive, IT = 290 A
VDR = 2/3 VDRM
800
A/µs
V/µs
(dv/dt)cr
PGM
TVJ = TVJM
;
1000
RGK = ∞; method 1 (linear voltage rise)
TVJ = TVJM
IT = ITAVM
;
tP = 30 µs
tP = 500 µs
120
60
W
W
Applications
;
• Motor control
• Power converter
• Heat and temperature control for
industrial furnaces and chemical
processes
PGAV
VRGM
20
10
W
V
TVJ
TVJM
Tstg
-40...+140
140
-40...+125
°C
°C
°C
• Lighting control
• Contactless switches
VISOL
50/60 Hz, RMS;
IISOL ≤ 1 mA;
t = 1 min
t = 1 s
3000
3600
V~
V~
Advantages
• Space and weight savings
• Simple mounting
Md
Mounting torque (M5)
Terminal connection torque (M8)
2.5-5/22-44 Nm/lb.in.
12-15/106-132 Nm/lb.in.
• Improvedtemperatureandpowercycling
• Reduced protection circuits
Weight
Typical including screws
320
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
1 - 4
MCC 250
MCD 250
Symbol
Conditions
Characteristic Values
IRRM
IDRM
TVJ = TVJM; VR = VRRM; VD = VDRM
70 mA
40 mA
VT, VF
IT /IF = 600 A; TVJ = 25°C
1.36
0.85
0.82 mΩ
V
V
VT0
rT
For power-loss calculations only (TVJ = 140°C)
VGT
VD = 6 V;
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
2
3
V
V
IGT
150 mA
200 mA
VGD
IGD
TVJ = TVJM
;
VD = 2/3 VDRM
0.25
10 mA
V
IL
TVJ = 25°C; tP = 30 µs; VD = 6 V
IG = 0.45 A; diG/dt = 0.45 A/µs
200 mA
IH
TVJ = 25°C; VD = 6 V; RGK = ∞
150 mA
tgd
TVJ = 25°C; VD = ½ VDRM
IG = 1 A; diG /dt = 1 A/µs
2
µs
tq
TVJ = TVJM; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs
VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM
typ. 200
µs
QS
IRM
TVJ = 125°C; IT /IF = 400 A, -di/dt = 50 A/µs
760
275
µC
A
RthJC
per thyristor/diode; DC current
per module
per thyristor/diode; DC current
per module
0.129 K/W
0.0645 K/W
0.169 K/W
0.0845 K/W
other values
see Fig. 8/9
RthJK
dS
dA
a
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
12.7 mm
9.6 mm
50 m/s2
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385,
Type ZY 180R(R = right for pin pair 6/7) CSA class 5851, guide 460-1-1
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
MCC
MCD
Threaded spacer for higher Anode/
Cathode construction:
Type ZY 250, material brass
20
12
14
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
2 - 4
MCC 250
MCD 250
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
3 - 4
MCC 250
MCD 250
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
0.15
K/W
30°
DC
RthJC for various conduction angles d:
ZthJC
d
RthJC (K/W)
0.10
0.05
0
DC
0.129
0.131
0.131
0.132
0.132
180°C
120°C
60°C
30°C
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
0.0035
0.0165
0.1091
0.099
0.168
0.456
10-3
10-2
10-1
100
101
102
s
t
Fig. 9 Transient thermal impedance
junction toheatsink(perthyristor
or diode)
0.20
K/W
30°
DC
ZthJK
RthJK for various conduction angles d:
0.15
0.10
0.05
0
d
RthJK (K/W)
DC
0.169
0.171
0.172
0.172
0.173
180°C
120°C
60°C
30°C
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.0033
0.0159
0.1053
0.04
0.099
0.168
0.456
1.36
10-3
10-2
10-1
100
101
102
s
t
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
4 - 4
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