MCC255-14IO1 [IXYS]
Thyristor Modules Thyristor/Diode Modules; 晶闸管模块可控硅/二极管模块
| 型号： | MCC255-14IO1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Thyristor Modules Thyristor/Diode Modules |
| 文件： | 总4页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCC 255
MCD 255
ITRMS = 2x 450 A
ITAVM = 2x 250 A
VRRM = 1200-1800 V
Thyristor Modules
Thyristor/Diode Modules
3
7
6
VRSM
VDSM
VRRM
VDRM
Type
5
2
4
V
V
1
1300
1500
1700
1900
1200
1400
1600
1800
MCC 255-12io1
MCC 255-14io1
MCC 255-16io1
MCC 255-18io1
MCD 255-12io1
MCD 255-14io1
MCD 255-16io1
MCD 255-18io1
3
3
6 7 1
5 4 2
Symbol
Test Conditions
Maximum Ratings
MCC
MCD
ITRMS, IFRMS
TVJ = TVJM
TC = 85°C; 180° sine
450
250
A
A
I
TAVM, IFAVM
1
5 4 2
ITSM, IFSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
9000
9600
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
7800
8600
A
A
òi2dt
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
405 000
382 000
A2s
A2s
Features
●
International standard package
Direct copper bonded Al2O3-ceramic
with copper base plate
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
304 000
307 000
A2s
A2s
●
●
●
●
●
Planar passivated chips
Isolation voltage 3600 V~
UL registered E 72873
(di/dt)cr
TVJ = TVJM
repetitive, IT = 860 A
100
A/ms
f =50 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 1 A,
Keyed gate/cathode twin pins
non repetitive, IT = ITAVM
500
1000
120
A/ms
V/ms
W
diG/dt = 1 A/ms
Applications
●
(dv/dt)cr
PGM
TVJ = TVJM; VDR = 2/3 VDRM
GK = ¥; method 1 (linear voltage rise)
Motor control, softstarter
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
R
●
●
TVJ = TVJM
IT = ITAVM
tP = 30 ms
tP = 500 ms
60
20
10
W
W
V
PGAV
VRGM
●
Lighting control
Solid state switches
●
TVJ
TVJM
Tstg
-40...+130
130
-40...+125
°C
°C
°C
Advantages
●
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
VISOL
50/60 Hz, RMS
t = 1 min
t = 1 s
3000
3600
V~
V~
●
IISOL £ 1 mA
●
Md
Mounting torque (M6)
Terminal connection torque (M8)
Typical including screws
4.5-7/40-62 Nm/lb.in.
11-13/97-115 Nm/lb.in.
Weight
750
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1 - 4
MCC 255
MCD 255
10
V
Symbol
IRRM, IDRM
VT, VF
Test Conditions
Characteristic Values
1: IGT, TVJ = 130 C
2: IGT, TVJ 25 C
TVJ = TVJM; VR = VRRM; VD = VDRM
IT, IF = 600 A; TVJ = 25°C
40 mA
=
3: IGT, TVJ = -40 C
1.36
0.8
V
V
VG
VT0
rT
For power-loss calculations only (TVJ = 130°C)
3
0.68 mW
6
5
2
VGT
IGT
VD = 6 V;
VD = 6 V;
TVJ = 25°C
VJ = -40°C
TVJ = 25°C
TVJ = -40°C
2
3
V
V
1
4
T
1
150 mA
220 mA
VGD
IGD
TVJ = TVJM
TVJ = TVJM
;
;
VD = 2/3 VDRM
VD = 2/3 VDRM
0.25
10 mA
V
4: PGM
5: PGM
=
=
20 W
60 W
IL
TVJ = 25°C; tP = 30 ms; VD = 6 V
IG = 0.45 A; diG/dt = 0.45 A/ms
200 mA
IGD, TVJ = 130 C
6: PGM = 120 W
0.1
10-3
IH
TVJ = 25°C; VD = 6 V; RGK = ¥
150 mA
10-2
10-1
100
101
102
A
IG
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 1 A; diG/dt = 1 A/ms
2
ms
Fig. 1 Gate trigger characteristics
tq
TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms typ. 200 ms
VR = 100 V; dv/dt = 50 V/ms; VD = 2/3 VDRM
100
TVJ = 25 C
QS
IRM
TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/ms
760 mC
275
µs
A
tgd
RthJC
RthJK
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
0.140 K/W
0.07 K/W
0.18 K/W
0.09 K/W
other values
see Fig. 8/9
typ.
Limit
10
dS
dA
a
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
12.7 mm
9.6 mm
50 m/s2
Optional accessories for modules
Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180 L (L = Left for pin pair 4/5)
Type ZY 180 R (R = Right for pin pair 6/7)
UL 758, style 1385,
CSA class 5851, guide 460-1-1
1
0.01
A
0.1
1
10
IG
Dimensions in mm (1 mm = 0.0394")
Fig. 2 Gate trigger delay time
MCC 255
MCD 255
M8x20
M8x20
© 2000 IXYS All rights reserved
2 - 4
MCC 255
MCD 255
10000
ITSM
106
A2s
400
A
ITAVM
IFAVM
I2dt
DC
50 Hz
A
180° sin
120°
60°
80 % VRRM
TVJ = 45°C
TVJ = 130°C
8000
300
200
100
0
TVJ = 45°C
30°
6000
4000
2000
0
TVJ = 130°C
105
104
s
ms
°C
150
0.001
0.01
0.1
1
0
0
1
10
0
25
50
75
100
TC
125
t
t
Fig. 3 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 4 òi2dt versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
500
Ptot
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
RthKA K/W
W
0.1
0.2
0.3
0.4
0.6
0.8
1.0
400
300
200
100
0
DC
180° sin
120°
60°
30°
°C
150
0
100
200
300
ITAVM/IFAVM
25
50
75
100
125
A
T
A
2000
Ptot
Fig. 6 Three phase rectifier bridge:
RthKA K/W
W
Power dissipation versus direct
output current and ambient
temperature
0.03
0.06
0.1
0.15
0.2
1500
0.3
0.4
1000
500
0
Circuit
B6
3xMCC255 or
3xMCD255
0
200
400
600
A
25
50
75
100
125
150
°C
TA
IdAVM
© 2000 IXYS All rights reserved
3 - 4
MCC 255
MCD 255
2000
W
Fig. 7 Three phase AC-controller:
Ptot
RthKA K/W
Power dissipation versus RMS
output current and ambient
temperature
0.03
0.06
0.1
0.15
0.2
1500
1000
500
0
0.3
0.4
Circuit
W3
3xMCC255 or
3xMCD255
0
100
200
300
400
500
IRMS
A
0
25
50
75
100
125 °C 150
TA
0.25
K/W
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
ZthJC
0.20
0.15
0.10
0.05
0.00
RthJC for various conduction angles d:
d
RthJC (K/W)
DC
180°
120°
60°
0.139
0.148
0.156
0.176
0.214
30°
60°
120°
180°
DC
30°
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
10-3
10-2
10-1
100
101
102
s
t
1
2
3
4
0.0066
0.0358
0.0831
0.0129
0.00054
0.098
0.54
12
0.30
Fig. 9 Transient thermal impedance
junction toheatsink(perthyristor
or diode)
K/W
0.25
ZthJK
RthJK for various conduction angles d:
0.20
0.15
0.10
0.05
0.00
d
RthJK (K/W)
DC
180°
120°
60°
0.179
0.188
0.196
0.216
0.254
30°
60°
120°
180°
DC
30°
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
10-3
10-2
10-1
100
101
102
s
1
2
3
4
5
0.0066
0.0358
0.0831
0.0129
0.04
0.00054
0.098
0.54
12
t
12
© 2000 IXYS All rights reserved
4 - 4
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