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MDI550-12A4 [IXYS]

IGBT Modules Short Circuit SOA Capability Square RBSOA; IGBT模块短路SOA能力广场RBSOA
MDI550-12A4
型号： MDI550-12A4
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

IGBT Modules Short Circuit SOA Capability Square RBSOA
IGBT模块短路SOA能力广场RBSOA

双极性晶体管
文件： 总4页 (文件大小：114K)
中文：  中文翻译
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MID 550-12 A4  
MDI 550-12 A4  
IGBT Modules  
IC25  
= 670 A  
VCES  
VCE(sat) typ. = 2.3 V  
= 1200 V  
Short Circuit SOA Capability  
Square RBSOA  
3
MID  
MDI  
2
11  
10  
3
1
3
1
1
9
8
8
9
11  
10  
2
2
E72873  
Features  
Symbol  
Conditions  
Maximum Ratings  
●
NPT IGBT technology  
low saturation voltage  
low switching losses  
●
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 20 kW  
1200  
1200  
V
V
●
●
switching frequency up to 30 kHz  
square RBSOA, no latch up  
high short circuit capability  
positive temperature coefficient for  
easy parallelling  
MOS input, voltage controlled  
ultra fast free wheeling diodes  
package with DCB ceramic base plate  
isolation voltage 4800 V  
●
●
●
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC80  
ICM  
TC = 25°C  
TC = 80°C  
TC = 80°C, tp = 1 ms  
670  
460  
920  
A
A
A
●
●
●
●
●

tSC  
VGE = ±15 V, VCE = VCES, TJ = 125°C  
RG = 1.8 W, non repetitive  
10  
ms  
(SCSOA)  
UL registered E72873  
RBSOA  
VGE= ±15 V, TJ = 125°C, RG = 1.8 W  
Clamped inductive load, L = 100 mH  
ICM = 800  
VCEK < VCES  
A
Advantages  
Ptot IGBT  
TC = 25°C  
2750  
W
●
space and weight savings  
reduced protection circuits  
TJ  
150  
°C  
°C  
●
Tstg  
-40 ... +150  
VISOL  
50/60 Hz, RMS  
t = 1 min  
t = 1 s  
4000  
4800  
V~  
V~  
Typical Applications  
IISOL £ 1 mA  
●
Insulating material: Al2O3  
AC and DC motor control  
power supplies  
welding inverters  
●
Md  
Mounting torque (module)  
2.25-2.75  
20-25  
Nm  
lb.in.  
Nm  
●
(teminals)  
2.5-3.7  
22-33  
lb.in.  
dS  
dA  
a
Creepage distance on surface  
Strike distance through air  
Max. allowable acceleration  
14  
9.6  
50  
mm  
mm  
m/s2  
Weight  
Typical  
250  
8.8  
g
oz.  
Data according to a single IGBT/FRED unless otherwise stated.  
Additional current limitation by external leads  

© 2000 IXYS All rights reserved  
1 - 4  
MID 550-12 A4  
MDI 550-12 A4  
Symbol  
Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Dimensions in mm (1 mm = 0.0394")  
min.  
typ. max.  
V(BR)CES  
VGE(th)  
ICES  
VGE = 0 V  
1200  
4.5  
V
V
IC = 16 mA, VCE = VGE  
VCE = VCES  
6.5  
TJ = 25°C  
TJ = 125°C  
21 mA  
mA  
30  
IGES  
VCE = 0 V, VGE = ±20 V  
1.6 µA  
VCE(sat)  
IC = 400 A, VGE = 15 V  
2.3  
2.8  
V
Cies  
Coes  
Cres  
26  
4
nF  
nF  
nF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
2
td(on)  
tr  
td(off)  
tf  
100  
60  
ns  
ns  
Inductive load, TJ = 125°C  
600  
90  
ns  
IC = 400 A, VGE = ±15 V  
ns  
VCE = 600 V, RG = 1.8 W  
Eon  
Eoff  
64  
mJ  
mJ  
59  
RthJC  
RthJS  
0.05 K/W  
K/W  
with heatsink compound  
0.09  
Equivalent Circuits for Simulation  
Free Wheeling Diode (FRED)  
Characteristic Values  
Conduction  
(TJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
VF  
IF  
IF = 400 A, VGE = 0 V  
2.4  
1.9  
2.6  
2.0  
V
V
IF = 400 A, VGE = 0 V, TJ = 125°C  
TC = 25°C  
TC = 80°C  

750  
460  
A
A
IGBT (typ. at VGE = 15 V; TJ = 125°C)  
IRM  
trr  
IF = 400 A, VGE = 0 V, -diF/dt = 3000 A/ms  
TJ = 125°C, VR = 600 V  
300  
200  
A
V0 = 1.3 V; R0 = 3.2 mW  
ns  
Free Wheeling Diode (typ. at TJ = 125°C)  
RthJC  
RthJS  
0.09 K/W  
K/W  
V0 = 1.3 V; R0 = 1.5 mW  
0.18  
Thermal Response  
Anti Parallel Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
VF  
IF  
IF = 100 A, VGE = 0 V  
2.4  
1.9  
2.6  
2.0  
V
V
IF = 100 A, VGE = 0 V, TJ = 125°C  
TC = 25°C  
TC = 80°C  
150  
95  
A
A
IGBT (typ.)  
Cth1 = 0.90 J/K; Rth1 = 0.049 K/W  
Cth2 = 2.07 J/K; Rth2 = 0.001 K/W  
IRM  
trr  
IF = 100 A, VGE = 0 V, -diF/dt = 600 A/ms  
TJ = 125°C, VR = 600 V  
62  
A
Free Wheeling Diode (typ.)  
200  
ns  
Cth1 = 0.71 J/K; Rth1 = 0.090 K/W  
Cth2 = 1.30 J/K; Rth2 = 0.002 K/W  
RthJC  
RthJS  
0.45 K/W  
K/W  
0.9  

Additional current limitation by external leads  
© 2000 IXYS All rights reserved  
2 - 4  
MID 550-12 A4  
MDI 550-12 A4  
900  
900  
A
700  
600  
500  
400  
300  
200  
100  
0
VGE=17V  
15V  
VGE=17V  
15V  
TJ = 25°C  
TJ = 125°C  
A
700  
600  
500  
400  
300  
200  
100  
0
13V  
11V  
IC  
IC  
13V  
11V  
9V  
9V  
V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V  
0.0 0.5 1.0  
1.5 2.0 2.5 3.0  
VCE  
VCE  
Fig. 1 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
1600  
800  
VCE = 20V  
A
A
TJ = 25°C  
TJ = 125°C  
1200  
1000  
800  
600  
400  
200  
0
600  
500  
400  
300  
200  
100  
0
IF  
IC  
TJ = 25°C  
V
0
1
2
3
4
5
6
7
8
9
10  
11  
V
VF  
VGE  
Fig. 3 Typ. transfer characteristics  
Fig. 4 Typ. forward characteristics of  
free wheeling diode  
120  
300  
ns  
20  
VCE = 600V  
IC = 400A  
V
A
trr  
IRM  
trr  
15  
10  
5
VGE  
80  
40  
0
200  
TJ = 125°C  
VR = 600V  
100  
0
IRM  
IF = 400A  
550-12  
0
A/ s  
-di/dt  
0
200  
400  
600  
1000  
0
500  
1000  
1500  
2000  
nC  
QG  
Fig. 5 Typ. turn on gate charge  
Fig. 6 Typ. turn off characteristics of  
free wheeling diode  
© 2000 IXYS All rights reserved  
3 - 4  
MID 550-12 A4  
MDI 550-12 A4  
160  
mJ  
160  
ns  
160  
mJ  
800  
Eon  
ns  
td(off)  
120  
120  
120  
80  
40  
0
600  
t
Eoff  
Eon  
td(on)  
tr  
t
VCE = 600V  
GE = ±15V  
G = 1.8  
Eoff  
VCE = 600V  
GE = ±15V  
G = 1.8  
80  
40  
0
80  
40  
0
400  
V
V
R
R
TJ = 125°C  
TJ = 125°C  
200  
tf  
0
0
200  
400  
600  
800  
1000  
A
0
200  
400  
600  
800  
1000  
A
IC  
IC  
Fig. 7 Typ. turn on energy and switching  
times versus collector current  
Fig. 8 Typ. turn off energy and switching  
times versus collector current  
400  
2000  
200  
mJ  
100  
mJ  
Eon  
VCE = 600V  
GE = ±15V  
VCE = 600V  
VGE = ±15V  
IC = 400A  
TJ = 125°C  
ns  
ns  
V
Eoff  
160  
320  
80  
60  
40  
20  
0
1600  
IC = 400A  
td(off)  
Eoff  
Eon  
TJ = 125°C  
t
t
td(on)  
120  
80  
40  
0
240  
160  
80  
1200  
800  
400  
0
tr  
tf  
0
0
2
4
6
8
10  
12  
14  
0
2
4
6
8
10  
12  
14  
RG  
RG  
Fig. 9 Typ. turn on energy and switching  
times versus gate resistor  
Fig.10 Typ. turn off energy and switching  
times versus gate resistor  
1000  
A
0.1  
K/W  
0.01  
800  
ICM  
ZthJC  
600  
400  
200  
0
diode  
IGBT  
0.001  
RG = 1.8  
TJ = 125°C  
VCEK < VCES  
0.0001  
single pulse  
550-12  
0.00001  
0.00001 0.0001  
0.001  
0.01  
0.1  
1
s
0
200 400 600 800 1000 1200 V  
VCE  
t
Fig. 11 Reverse biased safe operating area  
RBSOA  
Fig. 12 Typ. transient thermal impedance  
© 2000 IXYS All rights reserved  
4 - 4  

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