MIXA30W1200TED [IXYS]
Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, SIXPACK, E2-PACK-28;
| 型号： | MIXA30W1200TED |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, SIXPACK, E2-PACK-28 局域网 栅 功率控制 晶体管 |
| 文件： | 总6页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MIXA30W1200TED
Six-Pack
XPT IGBT
VCESꢀ =ꢀ1200ꢀV
IC25ꢀ =ꢀ 43ꢀA
VCE(sat)ꢀ=ꢀ 1.8ꢀV
Partꢀname (Marking on product)
MIXA30W1200TED
15, 16
25, 26
1
5
6
9
17
2
10
23, 24
21, 22
19, 20
NTC
E 72873
18
Pin configuration see outlines.
3
7
8
11
12
4
13, 14
27, 28
Features:
Application:
Package:
• Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
• "E2-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Temperature sense included
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x IC
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100622b
1 - 6
MIXA30W1200TED
ꢀOuputꢀInverterꢀT1ꢀ-ꢀT6
Ratings
Symbol
VCES
Definitions
Conditions
min.
typ. max. Unit
collector emitter voltage
TVJ = 25°C
1200
V
max. DC gate voltage
max. transient collector gate voltage
VGES
VGEM
continuous
transient
20
30
V
V
collector current
IC25
IC80
TC = 25°C
TC = 80°C
43
30
A
A
total power dissipation
Ptot
TC = 25°C
150
2.1
W
collector emitter saturation voltage
VCE(sat)
IC = 25 A; VGE = 15 V
TVJ = 25°C
TVJ = 125°C
1.8
2.1
V
V
gate emitter threshold voltage
collector emitter leakage current
VGE(th)
ICES
IC = 1 mA; VGE = VCE
VCE = VCES; VGE = 0 V
TVJ = 25°C
5.4
6.0
6.5
2.1
V
TVJ = 25°C
TVJ = 125°C
0.01
0.2
mA
mA
gate emitter leakage current
total gate charge
IGES
VGE = 20 V
500
nA
nC
QG(on)
VCE = 600 V; VGE = 15 V; IC = 25 A
76
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
td(on)
tr
td(off)
tf
Eon
Eoff
70
40
250
100
2.5
3.0
ns
ns
ns
ns
mJ
mJ
inductive load
VCE = 600 V; IC = 25 A
VGE = 15 V; RG = 39 W
TVJ = 125°C
reverse bias safe operating area
RBSOA
VGE
=
15 V; RG = 39 W;
TVJ = 125°C
VCEK = 1200 V
75
10
A
short circuit safe operating area
short circuit duration
short circuit current
SCSOA
tSC
ISC
VCE = 900 V; VGE = 15 V;
RG = 39 W; non-repetitive
TVJ = 125°C
µs
A
100
thermal resistance junction to case
RthJC
(per IGBT)
0.84 K/W
ꢀOutputꢀInverterꢀD1ꢀ-ꢀD6
Ratings
Symbol
VRRM
Definitions
Conditions
min.
typ. max. Unit
max. repetitve reverse voltage
forward current
TVJ = 25°C
1200
V
IF25
IF80
TC = 25°C
TC = 80°C
44
29
A
A
forward voltage
VF
IF = 30 A; VGE = 0 V
TVJ = 25°C
TVJ = 125°C
1.95
1.95
2.2
V
V
reverse recovery charge
max. reverse recovery current
reverse recovery time
Qrr
IRM
trr
3.5
30
350
0.9
µC
A
ns
mJ
VR = 600 V
diF /dt = -600 A/µs
IF = 30 A; VGE = 0 V
TVJ = 125°C
reverse recovery energy
Erec
thermal resistance junction to case
RthJC
(per diode)
1.2 K/W
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100622b
2 - 6
MIXA30W1200TED
ꢀTemperatureꢀSensorꢀNTC
Ratings
Symbol
Definitions
Conditions
min.
typ. max. Unit
resistance
R25
B25/50
TC = 25°C
4.75
5.0
3375
5.25
kW
K
ꢀModule
Symbol
Ratings
typ. max. Unit
Definitions
Conditions
min.
operating temperature
max. virtual junction temperature
storage temperature
TVJ
TVJM
Tstg
-40
125
150
125
°C
°C
°C
-40
isolation voltage
VISOL
CTI
Md
IISOL < 1 mA; 50/60 Hz
2500
V~
comparative tracking index
mounting torque (M5)
-
3
6
Nm
creep distance on surface
strike distance through air
dS
dA
10
7.5
mm
mm
resistance pin to chip
Rpin-chip
RthCH
2.5
0.02
180
mW
K/W
g
thermal resistance case to heatsink
with heatsink compound
Weight
ꢀEquivalentꢀCircuitsꢀforꢀSimulation
I
R0
V0
Ratings
typ. max. Unit
Symbol
Definitions
Conditions
min.
IGBT
V0
R0
T1 - T6
TVJ = 150°C
TVJ = 150°C
1.1
55
V
mW
V
mW
free wheeling diode
V0
R0
D1 - D6
1.2
27
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100622b
3 - 6
MIXA30W1200TED
ꢀCircuitꢀDiagram
15, 16
25, 26
1
2
5
6
9
17
18
10
23, 24
21, 22
19, 20
NTC
3
7
8
11
12
4
13, 14
27, 28
ꢀOutlineꢀDrawing
Dimensions in mm (1 mm = 0.0394“)
Ø 2.1; l=6
.
Detail X
Detail Y
Y
Z
.35
1°
15°
0.2
0-.5
.01
7
.08
.05
02.5
71
0.5
0.05
1.2
baseplate typ. 100 µm convex
over 75 mm before mounting
0.8
Ø 6
Detail Z
Ø 2.5
Ø 2.1
.03
0.1
+
82.3
.15
75.7
72.7
6
0
759.3
3
3
42.69
7
76.98
.317
918.3
68.1
20.95
11.43
X
B
24 23
22 21
20 19
18 17
25
26
16
15
7.62
0
.02
.02
1
4
32
Ø
7.62
83.4
27
28
14
13
A
11.43
20.95
1 2
3
4
5
6
7
8
9 10 1112
j
n0.4 A B
2
3
1
7
5
1
76.98
0
8
8
42.69
724.5
0.2
93
107.5
0.3
ꢀProductꢀMarking
Partꢀnumber
M = Module
I = IGBT
X = XPT
A = Standard
30 = Current Rating [A]
W = Six-Pack
1200 = Reverse Voltage [V]
T = NTC
ED = E2-Pack
Ordering
PartꢀName
MIXA30W1200 TED
MarkingꢀonꢀProduct DeliveringꢀMode BaseꢀQty OrderingꢀCode
MIXA30W1200TED Box 508635
Standard
6
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100622b
4 - 6
MIXA30W1200TED
ꢀInverterꢀT1ꢀ-ꢀT6ꢀ
50
50
40
30
20
10
0
VGE = 15 V
13 V
VGE = 15 V
17 V
19 V
11 V
40
30
20
10
0
TVJ = 125°C
TVJ = 25°C
IC
IC
TVJ = 125°C
[A]
[A]
9 V
0
1
2
3
0
1
2
3
4
5
VCE [V]
VCE [V]
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
20
15
10
5
50
40
30
20
10
0
IC
= 25 A
VCE = 600 V
IC
VGE
[A]
[V]
TVJ = 125°C
TVJ = 25°C
0
0
20
40
60
80
100
5
6
7
8
9
10 11 12 13
QG [nC]
VGE [V]
Fig. 3 Typ. tranfer characteristics
Fig. 4 Typ. turn-on gate charge
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Eon
6
5
4
3
RG
VCE = 600 V
VGE 15 V
=
39 Ω
=
Eoff
Eon
TVJ = 125°C
Eoff
E
E
IC
CE = 600 V
VGE 15 V
TVJ = 125°C
=
25 A
V
[mJ]
[mJ]
=
2
1
0
0
10
20
30
IC [A]
40
50
20 40 60 80 100 120 140 160
RG [Ω]
Fig. 5 Typ. switching energy vs. collector current
Fig. 6 Typ. switching energy vs. gate resistance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100622b
5 - 6
MIXA30W1200TED
ꢀInverterꢀD1ꢀ-ꢀD6ꢀ
2.0
1.6
1.2
0.8
0.4
0.0
60
TVJ = 125°C
VR = 600 V
50
40
60 A
30 A
Erec
IC
30
[mJ]
15 A
[A]
20
TVJ = 125°C
10
0
TVJ = 25°C
300 400 500 600 700 800 900 1000 1100
0
1
2
3
VF [V]
diF /dt [A/µs]
Fig. 8 Typ. recovery energy Erec versus di/dt
Fig. 7 Typ. forward characteristic
IGBT
FRD
Ri
ti
Ri
ti
1
2
3
4
0.18
0.14
0.36
0.16
0.0025 0.3413 0.0025
0.03
0.03
0.08
0.2171
0.3475
0.2941
0.03
0.03
0.08
ꢀNTC
100000
10
1
Diode
10000
IGBT
ZthJC
R
[Ω]
[K/W]
1000
100
0.1
0.01
0.001
0
25
50
75
100
125
150
0.01
0.1
1
10
TC [°C]
tp [s]
Fig. 9 Typ. NTC resistance versus temperature
Fig. 10 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100622b
6 - 6
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