MUBW30-12A6K [IXYS]
Preliminary data; 初步数据型号: | MUBW30-12A6K |
厂家: | IXYS CORPORATION |
描述: | Preliminary data |
文件: | 总5页 (文件大小:272K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MUBW30-12A6K
Three Phase
Rectifier
Brake
Chopper
Three Phase
Inverter
Converter - Brake - Inverter
Module (CBI ꢀ)
NPT IGBT
VRRM =ꢀ600 V VCES = ꢀ200 V VCES = ꢀ200 V
IDAVM25 = ꢀ30 A IC25
=
=
ꢀ9 A IC25
=
=
30 A
3 V
IFSM = 320 A VCE(sat)
2.9 V VCE(sat)
Preliminary data
Part name (Marking on product)
MUBW30-ꢀ2A6K
E72873
Pin configuration see outlines.
Features:
Application:
Package:
• High level of integration - only one
power semiconductor module required
for the whole drive
• Inverter with NPT IGBTs
- low saturation voltage
AC motor drives with
• UL registered
• Industry standard Eꢀ-pack
• Input from single or three phase grid
• Three phase synchronous or
asynchronous motor
• Electric braking operation
- positive temperature coefficient
- fast switching
- short tail current
• Epitaxial free wheeling diodes with
hiperfast and soft reverse recovery
• Industry standard package with insu
lated copper base plate and soldering
pins for PCB mounting
• Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
2007ꢀꢀꢀ3a
ꢀ - 5
MUBW30-12A6K
Ouput Inverter T1 - T6
Ratings
Symbol
VCES
Definitions
Conditions
min.
typ. max. Unit
collector emitter voltage
TVJ = 25°C to ꢀ50°C
ꢀ200
V
max. DC gate voltage
max. transient collector gate voltage
VGES
VGEM
continuous
transient
20
30
V
V
collector current
IC25
IC80
TC = 25°C
TC = 80°C
30
2ꢀ
A
A
total power dissipation
Ptot
TC = 25°C
ꢀ30
3.8
W
collector emitter saturation voltage
VCE(sat)
IC = 30 A; VGE = ꢀ5 V
TVJ = 25°C
TVJ = ꢀ25°C
3.0
3.4
V
V
gate emitter threshold voltage
collector emitter leakage current
VGE(th)
ICES
IC = 0.6 mA; VGE = VCE
VCE = VCES; VGE = 0 V
TVJ = 25°C
4.5
6.5
ꢀ
V
TVJ = 25°C
TVJ = ꢀ25°C
mA
mA
ꢀ.5
gate emitter leakage current
input capacitance
IGES
VCE = 0 V; VGE = 20 V
200
nA
pF
nC
Cies
VCE = 25 V; VGE = 0 V; f = ꢀ MHz
ꢀ000
70
total gate charge
QG(on)
VCE = 600 V; VGE = ꢀ5 V; IC = ꢀ7.5 A
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
td(on)
tr
td(off)
tf
Eon
Eoff
ꢀ00
80
500
70
2.3
ꢀ.8
ns
ns
ns
ns
mJ
mJ
inductive load
VCE = 600 V; IC = ꢀ5 A
VGE = ꢀ5 V; RG = 82 W
TVJ = ꢀ25°C
reverse bias safe operating area
short circuit safe operating area
ICM
RBSOA; VGE = ꢀ5 V; RG = 82 W
45
ꢀ0
A
L = ꢀ00 µH; clamped induct. load TVJ = ꢀ25°C
VCEmax = VCES - LS·di/dt
tSC
VCE = ꢀ200 V; VGE = ꢀ5 V;
TVJ = ꢀ25°C
µs
(SCSOA)
RG = 82 W; non-repetitive
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
(per IGBT)
(per IGBT)
0.95 K/W
K/W
0.35
Output Inverter D1 - D6
Ratings
Symbol
VRRM
Definitions
Conditions
min.
typ. max. Unit
max. repetitve reverse voltage
forward current
TVJ = ꢀ50°C
ꢀ200
V
IF25
IF80
TC = 25°C
TC = 80°C
49
32
A
A
forward voltage
VF
IF = 30 A; VGE = 0 V
TVJ = 25°C
TVJ = ꢀ25°C
2.9
V
V
2.0
max. reverse recovery current
reverse recovery time
reverse recovery energy
IRM
trr
Erec(off)
VR = 600 V
diF /dt = -500 A/µs
IF = 30 A; VGE = 0 V
27
ꢀ50
tbd
A
ns
µJ
TVJ = ꢀ25°C
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
(per diode)
(per diode)
0.9 K/W
K/W
0.3
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
2007ꢀꢀꢀ3a
2 - 5
MUBW30-12A6K
Brake Chopper T7
Ratings
Symbol
VCES
Definitions
Conditions
min.
typ. max. Unit
collector emitter voltage
TVJ = 25°C to ꢀ50°C
ꢀ200
V
max. DC gate voltage
max. transient collector gate voltage
VGES
VGEM
continuous
transient
20
30
V
V
collector current
IC25
IC80
TC = 25°C
TC = 80°C
ꢀ9
ꢀ3
A
A
total power dissipation
Ptot
TC = 25°C
90
W
collector emitter saturation voltage
VCE(sat)
IC = ꢀ5 A; VGE = ꢀ5 V
TVJ = 25°C
2.9
3.5
3.4
V
V
TVJ = ꢀ25°C
gate emitter threshold voltage
collector emitter leakage current
VGE(th)
ICES
IC = 0.4 mA; VGE = VCE
VCE = VCES; VGE = 0 V
TVJ = 25°C
4.5
6.5
0.5
V
TVJ = 25°C
TVJ = ꢀ25°C
mA
mA
0.8
gate emitter leakage current
input capacitance
IGES
VCE = 0 V; VGE = 20 V
ꢀ00
nA
pF
nC
Cies
VCE = 25 V; VGE = 0 V; f = ꢀ MHz
VCE = 600 V; VGE = ꢀ5 V; IC = ꢀ0 A
600
45
total gate charge
QG(on)
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
td(on)
tr
td(off)
tf
Eon
Eoff
45
40
290
60
ꢀ.2
ꢀ.ꢀ
ns
ns
ns
ns
mJ
mJ
inductive load
VCE = 600 V; IC = ꢀ0 A
VGE = ꢀ5 V; RG = 82 W
TVJ = ꢀ25°C
reverse bias safe operating area
short circuit safe operating area
ICM
RBSOA; VGE = ꢀ5 V; RG = 82 W
20
ꢀ0
A
L = ꢀ00 µH; clamped induct. load TVJ = ꢀ25°C
VCEmax = VCES - LS·di/dt
tSC
VCE = 720 V; VGE = ꢀ5 V;
TVJ = ꢀ25°C
µs
(SCSOA)
RG = 82 W; non-repetitive
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
(per IGBT)
(per IGBT)
ꢀ.37 K/W
K/W
0.45
Brake Chopper D7
Ratings
Symbol
VRRM
Definitions
Conditions
min.
typ. max. Unit
max. repetitive reverse voltage
TVJ = ꢀ50°C
ꢀ200
V
forward current
IF25
IF80
TC = 25°C
TC = 80°C
ꢀ5
ꢀ0
A
A
forward voltage
reverse current
VF
IF = ꢀ5 A; VGE = 0 V
VR = VRRM
TVJ = 25°C
TVJ = ꢀ25°C
3.5
V
V
2.0
0.2
IR
TVJ = 25°C
TVJ = ꢀ25°C
0.06
mA
mA
max. reverse recovery current
reverse recovery time
IRM
trr
VR = 600 V; IF = ꢀ0 A
diF /dt = -400 A/µs
ꢀ3
ꢀꢀ0
A
ns
TVJ = ꢀ25°C
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
(per diode)
(per diode)
2.5 K/W
K/W
0.05
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
2007ꢀꢀꢀ3a
3 - 5
MUBW30-12A6K
Input Rectifier Bridge D8 - D13
Definitions
Conditions
Symbol
VRRM
Maximum Ratings
max. repetitive reverse voltage
ꢀ600
V
average forward current
max. average DC output current
max. surge forward current
IFAV
IDAVM
IFSM
sine ꢀ80°
TC = 80°C
TC = 80°C
TC = 25°C
3ꢀ
89
320
A
A
A
rectangular; d = ꢀ/3; bridge
t = ꢀ0 ms; sine 50 Hz
total power dissipation
80
Ptot
TC = 25°C
W
Symbol
Conditions
Characteristic Values
min. typ. max.
forward voltage
reverse current
VF
IR
IF = 30 A
VR = VRRM
TVJ = 25°C
ꢀ.0
ꢀ.ꢀ
ꢀ.35
V
V
T
VJ = ꢀ25°C
TVJ = 25°C
TVJ = ꢀ25°C
0.02
mA
mA
0.4
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
(per diode)
(per diode)
TVJ = 25°C
ꢀ.4 K/W
K/W
0.45
Temperature Sensor NTC
Ratings
Symbol
Definitions
Conditions
Conditions
min.
typ. max. Unit
resistance
R25
B25/85
TC = 25°C
4.45
4.7
35ꢀ0
5.0
kW
K
Module
Symbol
Ratings
typ. max. Unit
Definitions
min.
operating temperature
max. virtual junction temperature
storage temperature
TVJ
TVJM
Tstg
-40
ꢀ25
ꢀ50
ꢀ25
°C
°C
°C
-40
isolation voltage
mounting torque
VISOL
Md
IISOL < ꢀ mA; 50/60 Hz
(M4)
2500
2.2
V~
2.0
Nm
creep distance on surface
strike distance through air
dS
dA
ꢀ2.7
ꢀ2.7
mm
mm
Weight
40
g
Equivalent Circuits for Simulation
I
R0
V0
Ratings
typ. max. Unit
Symbol
Definitions
Conditions
min.
rectifier diode
V0
R0
D8 - Dꢀ3
TVJ = ꢀ25°C
TVJ = ꢀ25°C
TVJ = ꢀ25°C
TVJ = ꢀ25°C
TVJ = ꢀ25°C
0.90
9
V
mW
IGBT
V0
R0
Tꢀ - T6
Dꢀ - D6
T7
tbd
tbd
V
mW
free wheeling diode
IGBT
V0
R0
ꢀ.5
ꢀ4
V
mW
V0
R0
ꢀ.5
ꢀ20
V
mW
V0
R0
free wheeling diode
D7
ꢀ.46
63
V
mW
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
2007ꢀꢀꢀ3a
4 - 5
MUBW30-12A6K
Outline Drawing
Dimensions in mm (ꢀ mm = 0.0394“)
Product Marking
Ordering
Standard
Part Name
Marking on Product Delivering Mode Base Qty Ordering Code
MUBW30-ꢀ2A6K Box ꢀ0 499 854
MUBW 30-ꢀ2A6K
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
2007ꢀꢀꢀ3a
5 - 5
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