MWI75-12A8 [IXYS]
IGBT Modules; IGBT模块
| 型号： | MWI75-12A8 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | IGBT Modules |
| 文件： | 总4页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MWI 75-12 A8
IC25
VCES
VCE(sat) typ. = 2.2 V
= 125 A
= 1200 V
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13, 21
1
2
5
6
9
10
19
17
15
3
4
7
8
11
12
14, 20
Features
IGBTs
• NPT IGBT technology
Symbol
VCES
Conditions
Maximum Ratings
• low saturation voltage
• low switching losses
TVJ = 25°C to 150°C
1200
20
V
V
• switching frequency up to 30 kHz
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
VGES
IC25
IC80
TC = 25°C
TC = 80°C
125
85
A
A
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
RBSOA
VGE = 15 V; RG = 15 Ω; TVJ = 125°C
ICM
=
150
A
µs
W
Clamped inductive load; L = 100 µH
VCEK ≤ VCES
tSC
(SCSOA)
VCE = VCES; VGE = 15 V; RG = 15 Ω; TVJ = 125°C
non-repetitive
10
Advantages
Ptot
TC = 25°C
500
• space savings
• reduced protection circuits
• package designed for wave soldering
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
Typical Applications
min.
typ. max.
• AC motor control
• AC servo and robot drives
• power supplies
VCE(sat)
IC = 75 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.2
2.5
2.6
V
V
VGE(th)
ICES
IC = 3 mA; VGE = VCE
4.5
6.5
5
V
VCE = VCES;VGE = 0 V; TVJ = 25°C
TVJ = 125°C
mA
mA
3
IGES
VCE = 0 V; VGE
=
20 V
400 nA
td(on)
tr
td(off)
tf
Eon
Eoff
100
50
650
50
12.1
10.5
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 75 A
VGE = 15 V; RG = 15 Ω
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600V; VGE = 15 V; IC = 75 A
5.5
350
nF
nC
RthJC
(per IGBT)
0.25 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1 - 2
MWI 75-12 A8
Diodes
Symbol
Equivalent Circuits for Simulation
Conduction
Conditions
Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
150
100
A
A
Symbol
VF
Conditions
Characteristic Values
min. typ. max.
IGBT (typ. at VGE = 15 V; TJ = 125°C)
IF = 75 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
2.2
1.6
2.6
V
V
V0 = 1.5 V; R0 = 13.5 mΩ
Free Wheeling Diode (typ. at TJ = 125°C)
IRM
trr
IF = 75 A; di /dt = -750 A/µs; TVJ = 125°C
VR = 600 V;FVGE = 0 V
79
220
A
ns
V0 = 1.3 V; R0 = 4 mΩ
Thermal Response
RthJC
(per diode)
0.41 K/W
Module
Symbol
Conditions
Maximum Ratings
TVJ
TJM
Tstg
operating
-40...+125
+150
-40...+125
°C
°C
°C
IGBT (typ.)
Cth1 = 0.295 J/K; Rth1 = 0.186 K/W
Cth2 = 1.750 J/K; Rth2 = 0.064 K/W
VISOL
Md
IISOL ≤ 1 mA; 50/60 Hz
2500
3 - 6
V~
Mounting torque (M5)
Nm
Free Wheeling Diode (typ.)
Cth1 = 0.227 J/K; Rth1 = 0.321 K/W
Cth2 = 1.328 J/K; Rth2 = 0.089 K/W
Symbol
Rpin-chip
Conditions
Characteristic Values
min. typ. max.
1.8
mΩ
dS
dA
Creepage distance on surface
Strike distance in air
10
10
mm
mm
RthCH
with heatsink compound
0.01
300
K/W
g
Weight
Dimensions in mm (1 mm = 0.0394")
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
2 - 2
MWI 75-12 A8
250
A
250
A
15 V
13 V
VGE = 17 V
VGE = 17 V
15 V
200
200
IC
IC
13 V
11 V
TVJ = 25°C
TVJ = 125°C
150
100
50
150
100
50
11 V
9 V
9 V
0
0
V
V
0
1
2
3
4
5
0
1
2
3
4
5
VCE
VCE
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
250
A
100
VCE = 20 V
A
200
150
100
50
80
60
40
20
0
IF
IC
TVJ = 125°C
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
0
V
0
1
2
3
4
5
6
7
8
9
10
V
VF
VGE
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics
of free wheeling diode
320
200
ns
20
VCE = 600 V
IC = 100 A
V
A
240
15
trr
trr
IRM
VGE
TVJ = 125°C
VR
IF
=
600 V
100 A
160
80
0
100
10
5
=
IRM
MWI75-12A8
0
A/µs 1000
0
0
200
400
600
-di/dt
0
100
200
300 nC 400
QG
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics
of free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
3 - 2
MWI 75-12 A8
32
8
20
0
s
t
VCE = 600 V
VGE 15 V
VCE = 600 V
VGE 15 V
d(on)
ns
mJ
mJ
=
=
RG = 15 Ω
TVJ = 125°C
RG = 15 Ω
TVJ = 125°C
24
16
8
6
4
2
0
15
10
5
5
0
5
Eoff
Eon
t
E
on
0
0
A
A
0
40
80
120
160
0
40
80
120
IC
160
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
Fig. 8 Typ. turn off energy and switching
times versus collector current
32
8
15
t
mJ
n
d(on)
mJ
24
ns
Eoff
Eon
6
t
10
VCE = 600 V
16
8
4
2
0
VGE
= 15 V
IC = 75 A
TVJ = 125°C
5
0
VCE = 600 V
VGE
IC
=
=
15 V
75 A
E
on
TVJ = 125°C
0
Ω
0
10
20
30
40
RG
50
60
0
10
20
30
40
RG
50 Ω 60
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
Fig.10 Typ. turn off energy and switching
times versus gate resistor
1
200
A
diode
K/W
IGBT
150
100
50
0.1
ICM
ZthJC
0.01
RG = 15 Ω
T
VJ = 125°C
single pulse
0.001
MWI75-12A8
0
0.0001
0.0001 0.001
0.01
0.1
1
10
s
0
200 400 600 800 1000 1200 1400
VCE
V
t
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
4 - 2
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