T0250NA52E [IXYS]
Insulated Gate Bipolar Transistor, 340A I(C), 5200V V(BR)CES, N-Channel, NA, 4 PIN;
| 型号： | T0250NA52E |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 340A I(C), 5200V V(BR)CES, N-Channel, NA, 4 PIN 栅 晶体管 |
| 文件： | 总7页 (文件大小：385K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Date:- 18 Jun, 2003
Data Sheet Issue:- 2
Provisional Data
Insulated Gate Bi-Polar Transistor
Type T0250NA52E
Absolute Maximum Ratings
MAXIMUM
LIMITS
VOLTAGE RATINGS
UNITS
VCES
Collector – emitter voltage
5200
2600
±20
V
V
V
VDC link
VGES
Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
MAXIMUM
LIMITS
RATINGS
UNITS
IC(DC)
ICRM
IECO
PMAX
Tj
Continuous DC collector current, IGBT (Note 2).
Repetitive peak collector current, tp=1ms, IGBT.
Maximum reverse emitter current, tp=1ms, (note 4).
Maximum power dissipation, IGBT (note 3).
Operating temperature range.
340
A
A
520
250
A
2380
W
°C
°C
-40 to +125
-40 to +125
Tstg
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 55°C, double side cooled.
3) Tsink = 25°C, double side cooled.
4) The Use of an anti-parallel diode is recommended.
Provisional Data Sheet T0250NA52E Issue 2
Page 1 of 7
June, 2003
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0250NA52E
Characteristics
IGBT Characteristics
UNITS
PARAMETER
MIN TYP MAX TEST CONDITIONS
-
-
-
-
3.5
4.0
-
3.9
4.5
1.9
8.7
IC = 250A, VGE = 15V, Tj = 25°C
IC = 250A, VGE = 15V
V
V
V
VCE(sat) Collector – emitter saturation voltage
VT0
rT
Threshold voltage
Slope resistance
Current range: 50 – 400A
-
Ω
m
VGE(TH
)
Gate threshold voltage
4.8
5.1
7
VCE = VGE, IC = 200mA
VCE = VCES, VGE = 0V
V
ICES
IGES
Cies
td(on)
tr(I)
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
5
-
10
mA
µA
nF
µs
µs
µC
J
-
-
-
-
-
-
-
-
-
-
±200 VGE = ±20V
50
2.7
0.6
-
-
-
VCE = 25V, VGE = 0V, f = 1MHz
-
IC =250A, VCE = 0.5VCES
,
Qg(on)
Eon
Turn-on gate charge
Turn-on energy
25
-
VGE = ±20V,
0.64
2.7
2.1
-
Ω,
Rg(ON)= 23
td(off)
tf
Turn-off delay time
Fall time
-
µs
µs
µC
J
Ω,
Rg(OFF)=11
-
Cg=25nF (external capacitor across gate)
Qg(off)
Eoff
Turn-off gate charge
Turn-off energy
60
-
0.53
Thermal Characteristics
UNITS
PARAMETER
MIN TYP MAX TEST CONDITIONS
-
-
-
42
61
135
7
Double side cooled
Collector side cooled
Emitter side cooled
K/kW
K/kW
K/kW
kN
RthJK
Thermal resistance junction to sink, IGBT
-
-
-
F
Mounting force
Weight
5
-
-
Wt
0.5
-
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
Provisional Data Sheet T0250NA52E Issue 2
Page 2 of 7
June, 2003
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0250NA52E
Curves
Figure 1 – Typical collector-emitter saturation
voltage characteristics
Figure 2 – Typical output characteristic
400
1000
T0250TA52E
AD issue 2
T0250TA52E
AD issue 2
Tj = 25°C
VGE=+15V
300
Tj=25°C
Tj=125°C
VGE = 20V
V
GE = 17V
200
100
0
100
VGE = 15V
VGE = 12V
V
GE = 10V
10
0
1
2
3
4
5
6
0
1
2
3
4
5
Collector to emitter saturation voltage - VCE(sat) (V)
Collector to emitter saturation voltage -VCE(SAT) (V)
Figure 3 – Typical output characteristic
Figure 4 – Typical turn-on gate charge
400
10
T0250TA52E
AD issue 2
T0250TA52E
AD issue 2
VCE=2600V
Tj = 125°C
IC=250A
VGE=±15V
Tj=125°C
8
VGE = 20V
GE = 17V
VGE = 15V
VGE = 12V
VGE = 10V
300
200
100
0
V
IC=150A
6
4
2
0
0
2
4
6
8
10
20
30
40
50
Collector to emitter saturation voltage -VCE(SAT)
(V)
Gate resistance - RG(on) (Ω)
Provisional Data Sheet T0250NA52E Issue 2
Page 3 of 7
June, 2003
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0250NA52E
Figure 6 – Typical turn-on delay time vs gate
resistance
Figure 5 – Typical turn-off gate charge
35
5
TT0250TA52E
ADissue2
T0250TA52E
AD issue 2
VCE=2600V
VGE=±15V
Tj=125°C
IC=250A
VCE=2600V
VGE=±15V
Tj=125°C
IC=150A
30
IC=250A
4
IC=150A
25
20
15
3
2
1
5
10
15
20
25
20
30
40
50
Gate resistance - RG(off) (Ω)
Gate resistance - RG(on) (Ω)
Figure 7 – Typical turn-off delay time vs. gate Figure 8 – Typical turn-on energy vs. collector
resistance
current
5
700
T0250TA52E
T0250TA52E
AD issue 2
IC=250A
IC=150A
AD issue 2
VCE=2600V
VGE=±15V
Tj=125°C
VCE=2600V
RG(on)=23Ω
VGE=±15V
Tj=125°C
600
500
400
300
200
100
0
4
3
2
1
VCE=2000V
VCE=1000V
0
10
20
30
0
50
100
150
200
250
300
Gate resistance - RG(off) (Ω)
Collector current - IC (A)
Provisional Data Sheet T0250NA52E Issue 2
Page 4 of 7
June, 2003
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0250NA52E
Figure 10 – Typical turn-off energy vs. collector
current
Figure 9 – Typical turn-on energy vs. di/dt
600
900
T0250TA52E
AD issue 2
T0250TA52E
AD issue 2
VCE=2600V
RG(off)=11Ω
GE=±15V
Tj=125°C
VCE=2600V
V
800
700
600
500
400
300
200
100
VGE=±15V
500
400
300
200
100
0
Tj=125°C
IC=250A
VCE=2000V
VCE=1000V
IC=150A
0
100
200
300
600
800
1000
1200
1400
Collector current - IC (A)
Commutation rate - di/dt (A/µs)
Figure 11 – Turn-off energy vs voltage
Figure 12 – Safe operating area
600
300
T0250TA52E
AD issue 2
T0250TA52E
AD issue 2
Ω
IC=250A
RG(off)=11
GE=±15V
Tj=125°C
VGE=±15V
Tj=125°C
V
500
400
300
200
100
0
250
200
150
100
50
IC=150A
IC=80A
0
0
1000
2000
3000
0
1000
2000
3000
4000
5000
6000
Collector-emitter voltage - VCE (V)
Gollector-emitter voltage - VCE (V)
Provisional Data Sheet T0250NA52E Issue 2
Page 5 of 7
June, 2003
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0250NA52E
Figure 13 – Transient thermal impedance
1
T0250TA52E
AD issue 2
Emitter
0.1
0.01
Collector
Double side
0.001
0.0001
0.00001
0.00001
0.0001
0.001
0.01
Time (s)
0.1
1
10
100
Provisional Data Sheet T0250NA52E Issue 2
Page 6 of 7
June, 2003
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0250NA52E
Outline Drawing & Ordering Information
171A107
ORDERING INFORMATION
(Please quote 10 digit code as below)\
T0250
Fixed type
Code
NA
Fixed Outline
Code
52
E
Voltage Grade
5200V
Fixed format code
Typical order code: T0250NA52E (VCES = 5200V)
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +44 (0)1249 659448
E-mail: WSL.sales@westcode,com
IXYS Corporation
3540 Bassett Street
Westcode Semiconductors Inc
3270 Cherry Avenue
www.westcode.com
www.ixys.net
Santa Clara CA 95054 USA
Tel: +1 (408) 982 0700
Fax: +1 (408) 496 0670
E-mail: sales@ixys.net
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
E-mail: WSI.sales@westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
Westcode Semiconductors Ltd.
©
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to
the conditions and limits contained in this report.
Provisional Data Sheet T0250NA52E Issue 2
Page 7 of 7
June, 2003
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