VUE130-12NO7 [IXYS]
Three Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED); 三相整流桥与快速恢复外延二极管（ FRED ）
| 型号： | VUE130-12NO7 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Three Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VUE 130-12NO7
IdAV = 130 A
VRRM = 1200 V
Three Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
in ECO-PAC 2
trr
= 40 ns
Preliminary data sheet
PS16
VRSM
V
VRRM
V
Typ
~ A 1
~ L 9
~ K10
1200
1200
VUE 130-12NO7
EG 1
Pin arangement see outlines
B3
Symbol
Conditions
Maximum Ratings
Features
• Package with DCB ceramic
base plate in low profile
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering
IdAV
IdAVM
①
TC = 70°C, module
130
90
A
A
IFSM
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
500
525
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
415
440
A
A
Applications
I2t
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1250
1160
A2s
A2s
• Supplies for DC power equipment
• Input and output rectifiers for high
frequency
• Battery DC power supplies
• Field supply for DC motors
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
860
820
A2s
A2s
TVJ
TVJM
Tstg
-40...+150
150
-40...+125
°C
°C
°C
Advantages
• Space and weight savings
• Improved temperature and power
cycling capability
VISOL
50/60 Hz, RMS t = 1 min
ISOL ≤ 1 mA t = 1 s
3000
3600
V~
V~
I
• Small and light weight
• Low noise switching
Md
Weight
Mounting torque (M4)
typ.
1.5-2/14-18 Nm/lb.in.
24
g
Symbol
IR
Conditions
Characteristic Values
Dimensions in mm (1 mm = 0.0394")
typ.
max.
VR = VRRM
VR = VRRM
TVJ = 25°C
TVJ = TVJM
1
mA
2.5 mA
VF
IF = 60 A
TVJ = 25°C
2.7
V
VT0
rT
for power-loss calculations only
1.07
8.2 mΩ
V
RthJC
RthCH
per diode; DC current
per diode, DC current, typ.
0.8 K/W
0.2 K/W
IRM
trr
IF = 130 A, -diF/dt = 100 A/µs
VR = 100 V, TVJ = 100°C
IF = 1 A; -di/dt = 300 A/µs; VR = 30 V, TVJ = 25°C
7
15
A
40
ns
a
dS
dA
Max. allowable acceleration
creeping distance on surface (pin to heatsink)
strike distance in air
50
11.2
9.7
m/s2
mm
mm
(pin to heatsink)
Data according to IEC 60747 refer to a single diode unless otherwise stated
① for resistive load at bridge output.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
1 - 2
VUE 130-12NO7
100
A
10
100
A
T
= 100°C
= 600 V
T
= 100°C
VJ
VJ
µC
V
V
= 600 V
R
R
80
8
6
4
2
0
80
Qr
IRM
IF
TVJ = 150°C
TVJ = 100°C
IF = 30 A
I = 30 A
F
I = 15 A
F
60
40
20
0
60
40
20
0
TVJ
=
25°C
IF = 15 A
I = 7.5 A
F
I = 7.5 A
F
DWLP55-12
DWLP55-12
DWLP55-12
B3
V
A/µs
-diF/dt
0
1
2
VF
3
100
1000
0
200 400 600 1000
A/µs
-diF/dt
Fig. 1 Forward current IF versus VF
2,0
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
280
120
1,2
T
= 100°C
= 600 V
T
= 100°C
V = 15 A
R
VJ
VJ
tfr
ns
V
R
V
µs
VFR
VFR
trr
tfr
1,5
Kf
240
80
40
0
0,8
IF = 30 A
I = 15 A
F
1,0
I = 7.5 A
F
IRM
200
160
0,4
0,5
Q
r
DWLP55-12
DWLP55-12
DWLP55-12
0,0
0
A/µs
0
40
80
120
160
0
200 400 600 1000
0
200 400 600 1000
C
A/µs
diF/dt
TVJ
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
1
K/W
ZthJC
0,1
VUE130-12
0,01
0,0001
s
0,001
0,01
0,1
1
10
t
Fig. 7 Typical transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
2 - 2
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