VUO120-12NO1 [IXYS]
Three Phase Rectifier Bridge; 三相整流桥
| 型号： | VUO120-12NO1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Three Phase Rectifier Bridge |
| 文件： | 总3页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VUO 120
VUO 155
IdAVM = 121/157 A
VRRM = 1200-1600 V
Three Phase
Rectifier Bridge
M1/O1
W5
VRRM Type
VRRM Type
V
V
A6
E6
K6
option
W6
1200 VUO 120-12 NO1 1600 VUO 120-16 NO1
1200 VUO 155-12 NO1 1600 VUO 155-16 NO1
M10/O10
Symbol
Test Conditions
Maximum Ratings
Features
VUO 120
1200/1600
121
VUO155
1200/1600 V
●
Soldering connections for PCB
VRRM
IdAVM
mounting
Isolation voltage 3600 V~
Convenient package outline
UL registered E 72873
TC = 75°C, sinusoidal 120°
157
A
●
IFSM
I2t
TVJ = 45°C,
TVJ = 150°C,
t = 10 ms, VR = 0 V
t = 10 ms, VR = 0 V
650
580
850
760
A
A
●
●
●
TVJ = 45°C,
TVJ = 150°C,
t = 10 ms, VR = 0 V
t = 10 ms, VR = 0V
2110
1680
3610
2880
A
A
Case and potting UL94 V-0
Ptot
TC = 25°C per diode
150
190
W
Applications
TVJ
TVJM
Tstg
-40...+150
150
-40...+125
°C
°C
°C
●
Input Rectifier for Drive Inverters
Advantages
VISOL
50/60 Hz
t = 1 min
t = 1 s
3000
3600
V~
V~
IISOL ≤ 1 mA
●
Easy to mount with two screws
Suitable for wave soldering
High temperature and power cycling
●
Md
Mounting torque
(M5)
(10-32 unf)
2-2.5
18-22
Nm
lb.in.
●
capability
dS
dA
a
Creep distance on surface
Strike distance in air
Maximum allowable acceleration
12.7
9.4
50
mm
mm
m/s2
Dimensions in mm (1 mm = 0.0394")
Weight
Symbol
typ.
80
g
Test Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IR
VR = VRRM
VR = VRRM
,
,
TVJ = 25°C
TVJ = 150°C
0.3 mA
5
mA
VF
IF = 150 A,
TVJ = 25°C
VUO 120
VUO 155
1.59
1.49
V
V
VF0
rT
For power-loss calculations only VUO 120
0.80
0.75
6.1 mΩ
4.6 mΩ
V
V
VUO 155
TVJ = 150°C
VUO 120
VUO 155
RthJC
RthJH
per diode
VUO 120
VUO 155
1.0 K/W
0.8 K/W
VUO 120
VUO 155
1.3 K/W
1.1 K/W
R25 (option)
Siemens S 891/2,2/+9
2.2 kΩ
IXYS reserves the right to change limits, test conditions and dimensions
© 2002 IXYS All rights reserved
1 - 3
VUO 120
150
A
700
A
104
A2s
50 Hz, 80% VRRM
VR = 0 V
600
I2t
IFSM
120
90
60
30
0
IF
500
400
300
200
100
0
TVJ = 45°C
TVJ = 150°C
TVJ 25°C
=
TVJ = 45°C
TVJ = 150°C
TVJ = 150°C
103
V
0.0
0.5
1.0
1.5
2.0
0.001
0.01
0.1
s
1
1
2
3
4
5 6 7 10
ms
t
VF
t
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 Surge overload current
Fig. 3 I2t versus time per diode
150
140
A
RthKA
:
W
Ptot
120
0.7 KW
KW
1.4 KW
1
100
Id(AV)M
100
2
3
5
KW
KW
KW
80
60
40
20
0
50
0
0
20
40
60
80
100 120 A 0 20 40 60 80 100 120 140 °C
Tamb
0
20 40 60 80 100 120 140 °C
TC
Id(AV)M
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 120°
Fig. 5 Max. forward current versus
case temperature
1.2
K/W
1.0
0.8
0.6
0.4
0.2
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.003521
0.1479
0.5599
0.2887
0.01
0.05
0.14
0.5
VUO 120
0.0
0.01
0.1
1
10
s
t
Fig. 6 Transient thermal impedance junction to case
© 2002 IXYS All rights reserved
2 - 3
VUO 155
150
A
700
A
104
A2s
50 Hz, 80% VRRM
VR = 0 V
600
I2t
120
90
60
30
0
IFSM
IF
500
400
300
200
100
0
TVJ = 45°C
TVJ = 45°C
TVJ = 150°C
TVJ 25°C
=
TVJ = 150°C
TVJ = 150°C
103
V
0.0
0.5
1.0
1.5
2.0
0.001
0.01
0.1
s
1
1
2
3
4
5 6 7 10
ms
t
VF
t
Fig. 1 Forward current versus voltage
Fig. 2 Surge overload current
Fig. 3 I2t versus time per diode
drop per diode
180
A
160
RthKA
:
W
150
0.7 KW
KW
1.4 KW
140
1
Id(AV)M
120
100
80
60
40
20
0
2
3
5
KW
KW
KW
Ptot
100
50
0
0
20 40 60 80 100 120 140
Id(AV)M
0
20 40 60 80 100 120 140 °C
Tamb
0
20 40 60 80 100 120 140 °C
TC
A
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 120°
Fig. 5 Max. forward current versus
case temperature
1.0
K/W
0.8
0.6
0.4
0.2
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.002817
0.1183
0.4479
0.231
0.01
0.05
0.14
0.5
VUO 155
0.0
0.01
0.1
1
10
s
t
Fig. 6 Transient thermal impedance junction to case
© 2002 IXYS All rights reserved
3 - 3
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