VUO122-14NO7 [IXYS]
Bridge Rectifier Diode, 3 Phase, 117A, 1400V V(RRM), Silicon, ROHS COMPLIANT, ECOPAC2-7;
| 型号： | VUO122-14NO7 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Bridge Rectifier Diode, 3 Phase, 117A, 1400V V(RRM), Silicon, ROHS COMPLIANT, ECOPAC2-7 局域网 二极管 |
| 文件： | 总5页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VUO122-14NO7
3~
Rectifier
Standard Rectifier Module
VRRM
IDAV
IFSM
V
= 1400
125 A
=
=
1000 A
3~ Rectifier Bridge
Part number
VUO122-14NO7
~
~
~
EG 1
K10 L9 A1
PS 18
ECO-PAC2
Package:
Features / Advantages:
Applications:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 9 mm
● Base plate: DCB ceramic
● Reduced weight
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130327a
© 2013 IXYS all rights reserved
VUO122-14NO7
Ratings
Rectifier
Conditions
Symbol
VRSM
Definition
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
1500
1400
100
2
V
V
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
VRRM
IR
reverse current
VR = 1400 V
VR = 1400 V
µA
mA
V
forward voltage drop
VF
50
1.13
1.47
1.05
1.49
125
IF =
A
V
IF = 150 A
IF = 50 A
IF = 150 A
TC = 115°C
rectangular
TVJ
=
°C
V
125
V
bridge output current
TVJ = 150°C
TVJ = 150°C
A
IDAV
d = ⅓
VF0
0.80
V
threshold voltage
slope resistance
for power loss calculation only
rF
4.6 mΩ
0.6 K/W
K/W
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
Ptot
0.3
TC = 25°C
TVJ = 45°C
VR = 0 V
205
1.00
1.08
850
920
W
kA
kA
A
total power dissipation
max. forward surge current
IFSM
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V; f = 1 MHz
TVJ = 150°C
VR = 0 V
A
value for fusing
I²t
TVJ = 45°C
VR = 0 V
5.00 kA²s
4.85 kA²s
3.62 kA²s
3.52 kA²s
pF
TVJ = 150°C
VR = 0 V
CJ
TVJ = 25°C
35
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130327a
© 2013 IXYS all rights reserved
VUO122-14NO7
Ratings
Package ECO-PAC2
Symbol
IRMS
Definition
Conditions
per terminal
min. typ. max.
100
Unit
A
°C
°C
g
RMS current
Tstg
-40
-40
125
150
storage temperature
virtual junction temperature
TVJ
Weight
MD
24
1.5
2
Nm
mounting torque
terminal to terminal
terminal to backside
dSpp/App
dSpb/Apb
6.0
10.0
mm
mm
V
creepage distance on surface | striking distance through air
t = 1 second
V
3000
2500
isolation voltage
ISOL
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
V
Logo
Made in Germany
Circuit Diagram
YYCW Lot#
XXX XX-XXXXX
Product number
Date Code
Ordering
Standard
Part Number
Marking on Product
VUO122-14NO7
Delivery Mode
Box
Quantity Code No.
VUO122-14NO7
25
494445
TVJ = 150°C
* on die level
Equivalent Circuits for Simulation
Rectifier
V0
I
R0
threshold voltage
slope resistance *
V0 max
R0 max
0.8
3.4
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130327a
© 2013 IXYS all rights reserved
VUO122-14NO7
Outlines ECO-PAC2
1.55 ±0.2
10.95 ±0.2
3.3 ±0.2
5.7 ±0.2
1.55 ±0.2
1.55 ±0.2
9.4 ±0.2
A C E
G
I
K
1
2
3
10
11
12
B
D
O
F
H
T
J
4
5
6
13
14
15
M
R
W
2
.
7
8
9
16
17
18
0
±
3
.
4
Ø
L N P
S V
X
1.5
8.3
43
51 ±0.2
~
~
~
EG 1
K10 L9 A1
PS 18
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130327a
© 2013 IXYS all rights reserved
VUO122-14NO7
Rectifier
800
700
200
6000
5000
I2t
4000
[A2s]
50 Hz
VR = 0 V
0.8 x V RRM
160
IF 120
IFSM
TVJ = 45°C
TVJ = 45°C
600
500
400
[A]
[A]
80
3000
2000
1000
TVJ = 150°C
TVJ
=
TVJ = 150°C
40 125°C
150°C
TVJ = 25°C
0
0.4
10-3
10-2
10-1
100
0.8
1.2
1.6
2.0
1
10
t [ms]
VF [V]
t [s]
Fig. 3 I2t vs. time per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 1 Forward current vs.
voltage drop per diode
60
50
40
30
20
10
0
DC =
1
160
120
RthJA
:
DC =
1
0.5
0.6 KW
0.8 KW
0.5
0.4
0.4
1
2
4
8
KW
KW
KW
KW
0.33
0.17
0.08
0.33
0.17
0.08
Ptot
[W]
IF(AV)M
80
40
0
[A]
0
10
20
30
40
50 0
25
50
75
100
125
150
0
25 50 75 100 125 150
TA [°C]
IdAVM [A]
TC [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
0.7
0.6
0.5
Constants for ZthJC calculation:
ZthJC
0.4
[K/W]
0.3
i
Rth (K/W)
ti (s)
1
2
3
4
0.08
0.04
0.29
0.19
0.012
0.007
0.036
0.102
0.2
0.1
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20130327a
© 2013 IXYS all rights reserved
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