2SD668AD [JCST]
Transistor;
| 型号： | 2SD668AD |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor 局域网 放大器 晶体管 |
| 文件： | 总1页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126C Plastic-Encapsulate Transistors
2SD668/2SD668A TRANSISTOR (NPN)
TO – 126C
FEATURES
Low Frequency Power Amplifier Complementary Pair with
2SB649/A
1. EMITTER
2. COLLECTOR
3. BASE
z
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
180
Unit
V
Collector-Base Voltage
2SD668
120
VCEO
Collector-Emitter Voltage
V
2SD668A
160
VEBO
IC
Emitter-Base Voltage
Collector Current
5
V
A
0.05
1
PC
Collector Power Dissipation
W
RθJA
Tj
Thermal Resistance From Junction To Ambient
Junction Temperature
125
℃/W
℃
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
Test
conditions
Min
180
120
160
5
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
IC=10µA,IE=0
V
2SD668
IC=1mA,IB=0
V
2SD668A
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
IE=10µA,IC=0
VCB=160V,IE=0
VEB=4V,IC=0
V
10
1
μA
μA
IEBO
2SD668
60
60
30
320
200
hFE(1)
VCE=5V, IC=10mA
DC current gain
2SD668A
hFE(2)
VCE(sat)
VBE
VCE=5V, IC=1mA
IC=30mA,IB=3mA
VCE=5V, IC=10mA
Collector-emitter saturation voltage
Base-emitter voltage
2
V
V
1.5
Collector output capacitance
Transition frequency
Cob
VCB=10V,IE=0, f=1MHz
VCE=10V,IC=10mA
3.5
pF
140
MHz
fT
CLASSIFICATION OF hFE(1)
2SD668A
TYPE
2SD668
RANK
B
C
D
RANGE
60-120
100-200
160-320
A,Dec,2010
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