2SD668B(TO-126) [JCST]
Transistor;
| 型号： | 2SD668B(TO-126) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
2SD668 TRANSISTOR (NPN)
TO – 126
FEATURES
1. EMITTER
2. COLLECTOR
3. BASE
z
Low Frequency Power Amplifier
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
180
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
120
V
5
V
Collector Current
0.05
1
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
W
RθJA
Tj
125
℃/W
℃
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
180
120
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=10µA,IE=0
IC=1mA,IB=0
V
IE= 10µA,IC=0
V
VCB=160V,IE=0
VEB=4V,IC=0
10
1
μA
μA
Emitter cut-off current
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
VCE=5V, IC=10mA
VCE=5V, IC=1mA
IC=30mA,IB=3mA
VCE=5V, IC=10mA
VCB=10V,IE=0, f=1MHz
VCE=10V,IC=10mA
60
30
320
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
2
V
V
1.5
Collector output capacitance
Transition frequency
Cob
3.5
pF
140
MHz
fT
CLASSIFICATION OF hFE(1)
RANK
B
C
D
RANGE
60-120
100-200
160-320
A,Dec,2010
相关型号：
2SD668D
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126MOD, 3 PIN
HITACHI
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