3CA1943O [JCST]
Transistor;
| 型号： | 3CA1943O |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-3P Plastic-Encapsulate Transistors
TO – 3P
3CA1943 TRANSISTOR (PNP)
1. BASE
FEATURES
2. COLLECTOR
3. EMITTER
z
z
High Breakdown Voltage
General Purpose Switching and Amplification
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
-120
-120
-5
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current
-15
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
3
W
RθJA
Tj
42
℃/W
℃
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
-120
-120
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=-100µA,IE=0
IC=-50mA,IB=0
IE=-100µA,IC=0
VCB=-120V,IE=0
VEB=-5V,IC=0
V
V
-5
-5
μA
μA
Emitter cut-off current
IEBO
hFE(1)
VCE=-5V, IC=-1A
VCE=-5V, IC=-7A
IC=-8A,IB=-800mA
VCE=-5V,IC=-1A
55
35
160
DC current gain
*
hFE(2)
Collector-emitter saturation voltage
Transition frequency
*Pulse test
VCE(sat)
fT
-3
V
10
MHz
CLASSIFICATION OF hFE (1)
RANK
R
O
RANGE
55-110
80-160
A,Dec,2010
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