3DD13002(TO-252) [JCST]
Transistor;
| 型号： | 3DD13002(TO-252) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：378K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/TO-252-2L Plastic-Encapsulate Transistors
3DD13002 TRANSISTOR (NPN)
TO-251
TO-252-2L
FEATURE
1
· power switching applications
1. BASE
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
2. COLLECTOR
3. EMITTER
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector -Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
600
400
6
Units
V
1
V
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
1
A
PC
1.25
150
-55-150
W
℃
℃
TJ
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
600
400
6
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
IC= 100μA，IE=0
IC= 1mA，IB=0
V
IE= 100μA，IC=0
VCB= 600V，IE=0
VCB= 400V，IE=0
VEB= 7V， IC=0
100
100
100
40
µA
µA
µA
Collector cut-off current
Emitter cut-off current
Dc current gain
ICEO
IEBO
hFE1
VCE= 10 V, IC= 200mA
VCE= 10 V, IC= 0.25mA
IC=200mA, IB= 40mA
IC=200mA, IB= 40mA
9
5
hFE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
0.5
1.1
V
V
V
CE=10V, IC=100mA
Transition frequency
fT
5
MHz
f =1MHz
Fall time
tf
0.5
2.5
µs
µs
IC=1A, IB1=-IB2=0.2A
VCC=100V
Storage time
ts
CLASSIFICATION OF hFE
1
Range
9-15
15-20
20-25
25-30
30-35
35-40
Typical characteristics
3DD13002
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