8550SSB [JCST]
Transistor;
| 型号： | 8550SSB |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor 晶体 晶体管 |
| 文件： | 总3页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8550S TRANSISTOR（ PNP
）
TO— 92
FEATURE
Power dissipation
PCM : 0.625 W（Tamb=25℃）
Collector current
ICM : -0.5
1.EMITTER
2. COLLECTOR
3.BASE
A
Collector-base voltage
V(BR)CBO : -40
V
1 2 3
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
-40
-25
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Ic= -100μA , IE=0
Ic= -0.1 mA， IB=0
IE= -100μA， IC=0
VCB= -40 V , IE=0
V
V
-0.1
-0.1
-0.1
300
μA
μA
μA
Collector cut-off current
ICEO
VCE= -20 V , IB=0
VEB= - 3 V， IC=0
Emitter cut-off current
IEBO
hFE（1）
VCE= -1 V, IC= -50mA
VCE= -1 V, IC= -500mA
IC=-500mA, IB=-50 mA
IC=-500mA, IB=-50 mA
85
50
DC current gain
hFE（2）
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
-0.6
-1.2
V
V
VCE=- 6 V, I =-20mA
C
Transition frequency
fT
150
MHz
f =30MHz
CLASSIFICATION OF hFE
(1)
Rank
B
C
D
Range
85-160
120-200
160-300
TO-92 PACKAGE OUTLINE DIMENSIONS
D1
D
b
φ
e
e1
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
3.300
1.100
0.380
0.360
4.400
3.430
4.300
3.700
1.400
0.550
0.510
4.700
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.146
0.055
0.022
0.020
0.185
A
A1
b
c
D
D1
E
4.700
0.185
1.270TYP
0.050TYP
e
2.440
2.640
14.500
1.600
0.380
0.096
0.555
0.104
0.571
0.063
0.015
e1
L
14.100
Ö
0.000
0.000
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