B772R(TO-92) [JCST]
Transistor;
| 型号： | B772R(TO-92) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
B772 TRANSISTOR（PNP）
TO-92
FEATURES
Power dissipation
PCM
1. EMITTER
2. COLLECTOR
3. BASE
: 625
m W（Tamb=25℃）
1 2 3
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
VCBO
Parameter
Value
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-40
-30
VCEO
VEBO
IC
V
-6
V
Collector Current -Continuous
Collector Dissipation
-3
A
PC
0.625
150
W
℃
℃
TJ
Junction Temperature
Storage Temperature
Tstg
-55-150
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Ic=-100μA ，IE=0
IC= -10 mA , IB=0
IE= -100 μA，IC=0
VCB= -40 V , IE=0
VCE=-30 V , IB=0
VEB=-6V , IC=0
-40
-30
-6
V
V
V
-1
-10
-1
μA
μA
μA
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
hFE
（ ）
1
V
CE= -2V, IC= -1A
60
32
400
DC current gain
hFE
（ ）
2
VCE=-2V, IC= -100mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
IC=-2A, IB= -0.2A
IC=-2A, IB= -0.2A
-0.5
-1.5
V
V
VCE= -5V, IC=-0.1A
f = 10MHz
Transition frequency
50
MHz
f T
CLASSIFICATION OF hFE(1)
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
Typical characteristics
B772
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UTC
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