CESD5V0D1 [JCST]
Trans Voltage Suppressor Diode, 5V V(RWM), Unidirectional, 1 Element, Silicon,;
| 型号： | CESD5V0D1 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Trans Voltage Suppressor Diode, 5V V(RWM), Unidirectional, 1 Element, Silicon, 局域网 光电二极管 |
| 文件： | 总2页 (文件大小：957K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
SOD-123
CESD5V0D1 ESD Protection Diode
DESCRIPTION
The CESD5V0D1 is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
FEATURES
z
z
z
z
z
z
Stand−off Voltage:5V
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 KV) Per Human Body Model
IEC61000−4−2 Level 4 ESD Protection
These are Pb−Free Devices
Maximum Ratings @Ta=25℃
Limit
Unit
Parameter
Symbol
30
30
IEC61000−4−2(ESD)
ESD Voltage
Air
KV
Contact
30
250
KV
mW
℃/W
℃
per human body model
Total Power Dissipation on FR-5 Board (Note 1)
Thermal Resistance Junction−to−Ambient
PD
RΘJA
TL
500
260
Lead Solder Temperature − Maximum (10 Second Duration)
Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
℃
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only.
Functional operation above the recommended. Operating conditions is not implied. Extended exposure to
stresses above the recommended operating conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
A,Sep,2011
ELECTRICAL CHARACTERISTICS (Ta= 25°C unless otherwise noted)
Symbol
IPP
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
VC
VRWM
IR
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
VBR
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
Ppk
C
Peak Power Dissipation
Max. Capacitance @VR=0 and f =1MHz
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA)
VRWM
(V)
Max
5
IR (μA)
@ VRWM
Max
V
BR (V)
@ IT(Note 2)
Min Max
VC(V)
@Max IPP*
Max
Device
IT
IPP(A) +
Device*
Marking
mA
Max
CESD5V0D1
KE
1
6.2
7.3
1.0
21.7
15
*Other voltages available upon request.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
A,Sep,2011
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